Nec Corporation

Nlt Technologies, Ltd.

Wuhan Tianma Micro-electronics Co., Ltd

Tianma Micro-electronics Co., Ltd.

Nec Lcd Technologies, Ltd.

Sumitomo Chemical Company, Limited

Dai Nippon Printing Co., Ltd.

Kuraray Co., Ltd.

Toppan Printing Co., Ltd.

Jsr Corporation

Konica-minolta Holdings, Inc.

Dainippon Ink and Chemicals, Incorporated

Sumitomo Bakelite Company Limited

Toray Industries, Inc.

Hitachi Chemical Company, Ltd.

Kazushige Takechi

Mitsuru Nakata

Shinnosuke Iwamatsu

Toru Yahagi

Hiroshi Kanoh

Yutaka Abe

Hiroyuki Uchida

Jun Tanaka

Seiya Kobayashi

Yoshiyuki Watanabe

Mutsuto Katoh

Ken Sumiyoshi

Hiroaki Tanaka

Hiroyuki Sekine

Shigeru Kimura

Takahiko Watanabe

Tsutomu Hamada

Noboru Oshima

Akitoshi Maeda

Shinichi Nakata

Akimitsu Tsukuda

Ichiro Fujieda

Yoshiyuki Ono

Shusaku Kido

Takayuki Ishino

Atsushi Kumano

Naoto Hirano

Motoyuki Suzuki

Katsuya Fujisawa

Hirofumi Ihara

Hiroshi Kanou

Takasuke Hayase

Satoshi Ihida

Hisatomo Yonehara

Satoshi Doi

Yoshiki Matsuoka

Toshimasa Eguchi

Tokuo Ikari

Shouichi Kuroha

Kazuo Genda

Shigenori Yamaoka

Fuminori Tamura

Tatsumi Takahashi

Norimasa Sekine

Tae Yoshikawa

Yasuo Tsuruoka

Toru Ukita

Toshihiko Harano

Shunsuke Konno

Hisanobu Shimodouzono

Yong Yuan

Hiroshi Haga

Mamoru Okamoto

Hiroshi Tanabe

Shui He

Hiroshi Hayama

Kenji Sera

Hiroki Murayama

Narumoto Uesaka

Yuya Kuwahara

Yutaka Murakami

Kazuo Nikami

Mitsura Nakata

FeiPeng Lin

A thin-film transistor substrate includes an insulating substrate, a conductor layer including a top-gate electrode part of an oxide semiconductor thin-film transistor, an oxide semiconductor layer located lower than the top-gate electrode part and including a channel region of the oxide semiconductor thin-film transistor, and an upper insulating layer located between the conductor layer and the oxide semiconductor layer. The oxide semiconductor layer includes low-resistive regions lower in resistance than the channel region. The low-resistive regions sandwich the channel region in an in-plane direction of the insulating substrate and contain impurities to cause resistance reduction of the low-resistive regions. A concentration profile in a layering direction of the impurities to cause resistance reduction of the low resistive regions has one or more peaks. The one or more peaks are located outside the oxide semiconductor layer.

Thin-film transistor substrate with impurity concentration profile in layering direction having peak outside semiconductor layer

An ion sensing device includes a first field-effect transistor, a second field-effect transistor, a reference electrode configured to directly contact a sample solution, a first ion-sensitive film, and a second ion-sensitive film. Each of the first field-effect transistor and the second field-effect transistor includes a semiconductor film, a bottom gate electrode, a bottom gate insulating film located between the bottom gate electrode and the semiconductor film, and a top gate insulating film. Surface materials in contact with the sample solution for the first ion-sensitive film and the second ion-sensitive films are the same. A sensitivity of the combination of the first field-effect transistor and the first ion-sensitive film is higher than a sensitivity of the combination of the second field-effect transistor and the second ion-sensitive film.

Ion sensing device

In an oxide semiconductor thin-film transistor, an oxide semiconductor part includes a channel region and a first and a second source/drain regions sandwiching the channel region. An insulator part made of a metal compound having a relative permittivity of not less than 8 is located between a gate electrode part and the oxide semiconductor part. A first compound interfacial part contains constituent elements of the oxide semiconductor part and constituent elements of the insulator part, and has an interface with a first source/drain electrode part and another interface with the first source/drain region. A second compound interfacial part contains constituent elements of the oxide semiconductor part and constituent elements of the insulator part, and has an interface with a second source/drain electrode part and another interface with the second source/drain region.

Oxide semiconductor thin-film transistor and method of manufacturing oxide semiconductor thin-film transistor

A polysilicon layer includes a polysilicon part of a polysilicon thin-film transistor. A first conductor layer includes a first gate electrode part of the polysilicon thin-film transistor. The first insulator layer includes a first insulator part located between the first gate electrode part and the polysilicon part. The oxide semiconductor layer includes an oxide semiconductor part of an oxide semiconductor thin-film transistor. The second conductor layer includes a second gate electrode part of the oxide semiconductor thin-film transistor. The second insulator layer includes a second insulator part located between the second gate electrode part and the oxide semiconductor part. The second insulator layer has a relative permittivity of not less than 8. The entire area of the second insulator layer is covered with the second conductor layer.

Thin-film transistor circuit and method of manufacturing thin-film transistor circuit

A first oxide semiconductor thin-fil transistor includes a top gate electrode, a first metal oxide film, and a top gate insulating film between the top gate electrode and the first metal oxide film. A second oxide semiconductor thin-film transistor includes a bottom gate electrode, a second metal oxide film, and a bottom gate insulating film between the bottom gate electrode and the second metal oxide film. A storage capacitor stores a signal voltage to the bottom gate electrode. A first electrode of the storage capacitor includes a part of the bottom gate electrode. A source/drain region of the first oxide semiconductor thin-film transistor is in contact with the bottom gate electrode in a contact hole in the bottom gate insulating layer. Capacitance per unit area of the bottom gate insulating film is smaller than capacitance per unit area of the top gate insulating film.

Thin-film device

A thin-film device includes a polysilicon element and an oxide semiconductor element. The polysilicon element includes a first part made of low-resistive polysilicon. The oxide semiconductor element includes a second part made of low-resistive oxide semiconductor. The first part and the second part are disposed to overlap each other and connected.

A thin-film transistor substrate includes an insulating substrate, a first insulating layer, a first thin-film transistor including a first oxide semiconductor film, a second insulating layer located upper than the first insulating layer, and a second thin-film transistor including a second oxide semiconductor film different in composition from the first oxide semiconductor film. At least a part of the first oxide semiconductor film is provided above and in contact with the first insulating layer. The first insulating layer is the uppermost insulating layer among insulating layers located lower than and in contact with the first oxide semiconductor film. At least a part of the second oxide semiconductor film is provided above and in contact with the second insulating layer. The second insulating layer is the uppermost insulating layer among insulating layers located lower than and in contact with the second oxide semiconductor film.

Thin-film transistor substrate

A semiconductor device includes an insulating substrate, a polysilicon layer formed on the insulating substrate, a first-gate-insulating layer formed on the polysilicon layer, a first metal layer formed on the first-gate-insulating layer, an oxide-semiconductor layer formed on the first-gate-insulating layer, a second-gate-insulating layer formed on the oxide-semiconductor layer, a second metal layer formed on the second-gate-insulating layer, a first insulating interlayer formed on the second metal layer, a third metal layer formed on the first insulating interlayer, a first top gate planar type thin film transistor in which the polysilicon layer serves as a channel and which has a source, a drain and a gate, and a second top gate planar self-aligned type thin film transistor in which the oxide-semiconductor layer serves as a channel and which has a source, a drain and a gate, wherein the gate of the first top gate planar type thin film transistor is made of a first metal layer, the gate of the second top gate planar self-aligned type thin film transistor is made of the second metal layer, the source and the drain of the first top gate planar type thin film transistor and the source and the drain of the second top gate planar self-aligned type thin film transistor are made of the third metal layer, and the source or the drain of the first top gate planar type thin film transistor and the gate of the second top gate planar self-aligned type thin film transistor are electrically connected to each other.

Semiconductor device including top gate planar type thin-film transistor and top gate planar self-aligned type thin-film transistor

A display device includes a substrate, regions on the substrate each including a transparent first and a second regions, one or more light-emitting elements disposed in the second region, and a circular polarizing pattern disposed in front of the pixel regions. Each of the one or more light-emitting elements includes a reflective electrode and a transparent electrode layered one above the other, and a light-emitting film provided between the transparent electrode and the reflective electrode. The light-emitting film is configured to emit light in response to electric current supplied between the reflective electrode and the transparent electrode. The circular polarizing pattern covers the entire reflective electrode when seen from the front of the display device. At least a part of the first region is located within a gap in the circular polarizing pattern when seen from the front of the display device.

Display device

A semiconductor device includes an insulating substrate, a polysilicon layer, a first-gate-insulating layer, a first metal layer, an oxide-semiconductor layer, a second-gate-insulating layer, a second metal layer, a first insulating interlayer, a third metal layer, a first top gate planar type thin film transistor in which the polysilicon layer serves as a channel, and a second top gate planar self-aligned type thin film transistor in which the oxide-semiconductor layer serves as a channel. The gates of the first top gate planar type thin film transistor and the second top gate planar self-aligned type thin film transistor are made of the first and second metal layers, respectively. The sources and the drains of the first top gate planar type thin film transistor and the second top gate planar self-aligned type thin film transistor are made of the third metal layer.

Semiconductor device, display apparatus, method of manufacturing semiconductor device and method of manufacturing display apparatus

An electrostatic sensing device includes a sensor oxide semiconductor TFT, and a controller configured to control the sensor oxide semiconductor TFT. The sensor oxide semiconductor TFT includes an oxide semiconductor active layer, a source electrode connected with the oxide semiconductor active layer, a drain electrode connected with the oxide semiconductor active layer, a gate electrode behind the oxide semiconductor active layer, and a gate insulating layer between the gate electrode and the oxide semiconductor active layer The controller is configured to measure a difference from a reference current of a current flowing between the source electrode and the drain electrode, while applying a driving voltage to the gate electrode, and determine polarity of electrostatic charge of the measurement target based on direction of the difference from the reference current.

Electrostatic sensing device

Each of pixels includes: a transparent upper electrode covering at least a part of the first region and at least a part of the second region; a reflective lower electrode disposed in the second region; a light-emitting film disposed between the transparent upper electrode and the reflective lower electrode, the light-emitting film being configured to emit light in response to supplied electric current; a thin film transistor disposed lower than the reflective lower electrode in the second region, the thin film transistor having a channel made of a transparent oxide; and a transparent low-resistive film that is made of the transparent oxide and interconnects the power-source potential supply line and the transparent upper electrode, the transparent low-resistive film being separate from an oxide film that is made of the transparent oxide and includes the channel and having a resistance lower than a resistance of the channel.

A TFT biosensor includes a gate electrode (silicon substrate), a reference electrode, and enzyme that is fixed to an insulating substrate spatially separated from the gate electrode and the reference electrode. A pH variation in the vicinity of an ion-sensitive insulating film is induced by a reaction between the enzyme and a sensing object material. The TFT biosensor can detect a concentration of the sensing object material with high sensitivity by detecting the pH variation as a threshold voltage shift of characteristics of a gate-source voltage to a source-drain current.

Biosensor and detection device

Two gate electrodes are provided on upper and lower sides of an oxide semiconductor active layer through respective insulating films. In addition, a first read-out electrode and a second read-out electrode are provided on right and left sides of the oxide semiconductor active layer. In the optical sensor element, in a case where a voltage is applied to each gate electrode, a potential difference occurs between the first read-out electrode and the second read-out electrode, and intensity of irradiation light is detected based on a current that flows between the read-out electrodes.

Optical sensor element and photoelectric conversion device

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Tokyo, Japan

Kazushige Takechi