Sharp Kabushiki Kaisha Corporation

Fujitsu Display Technologies Corporation

Kazushige Hotta

Takuya Watanabe

Hiroyuki Yaegashi

Tamotsu Wada

Kenichi Yanai

Takuya Hirano

Nobuo Sasaki

Seiji Doi

Yasuyoshi Mishima

Koji Ohgata

Yoshio Nagahiro

Masaki Yamanaka

Noriyuki Ohashi

Ken-ichi Yanai

Yoshio Kurosawa

In order to efficiently manufacture a semiconductor device having a plurality of TFTs formed thereon, which can be applied to a variety of uses, a semiconductor device () is disclosed that is provided with a first P-type TFT (), a second P-type TFT (), a first N-type TFT (), and a second N-type TFT (), each having a channel region that is formed of polycrystalline silicon. When d1, d2, d3, and d4 respectively represent the concentrations of p-type impurities in the respective channel regions of the TFTs (to), at least three values out of d1, d2, d3, and d4 are mutually different, and d1, d2, d3, and d4 satisfy relations of d1&#x3c;d2 and d3&#x3c;d4.

Semiconductor device, display device, and production method for semiconductor device and display device

Disclosed is a semiconductor device in which an n-channel type first thin film transistor and a p-channel type second thin film transistor are provided on the same substrate. The first thin film transistor has a first semiconductor layer (), and the second thin film transistor has a second semiconductor layer (), a third semiconductor layer (), and a fourth semiconductor layer (). The first semiconductor layer (), the second semiconductor layer (), the third semiconductor layer () and the fourth semiconductor layer () are formed of the same film, and the first and second semiconductor layers () respectively have slanted portions () positioned at respective peripheries, and main portions () made of portions other than the slanted portions. A p-type impurity is implanted into the slanted portion () of the first semiconductor layer at a concentration higher than that in the main portion () of the first semiconductor layer and that in the main portion () of the second semiconductor layer.

Semiconductor device and method for manufacturing same

Disclosed is a semiconductor deviceA that has first lightly doped drain regionsAandAbetween a source regionAand a channel regionAof a first conductive-type driver circuit TFTAand/or between a drain regionAand the channel regionAof the first conductive-type driver circuit TFTA, and second lightly doped drain regionsC andC between a source regionC and a channel regionC of a first conductive-type pixel TFTC and/or between a drain regionC and the channel regionC of the first conductive-type pixel TFTC, in which the first lightly doped drain regionsAandAhave first conductive-type impurities nat a first impurity concentration C, and the second lightly doped drain regionsC andC have first conductive-type impurities nat the first impurity concentration Cand second conductive-type impurities p2 at a second impurity concentration C.

Semiconductor device, and method for producing same

A first insulating film is formed. Then, a gate electrode of a low voltage drive thin film transistor and a mask film for covering a region constituting a channel of a high voltage drive thin film transistor are formed with a molybdenum film on the first insulating film. An impurity is implanted into a semiconductor film while using the gate electrode and the mask film as a mask, thereby forming a high density impurity region. Thereafter, the impurity is activated by performing a thermal process under a condition at 500&#xb0; C. and for 2 hours, for example. Subsequently, the mask film is removed and a second insulating film is formed. A gate electrode of the high voltage drive thin film transistor is formed with an aluminum alloy on the second insulating film.

Thin film transistor device and method of manufacturing the same

An active matrix substrate has: scanning lines extending in row direction and image data lines extending in column direction, formed in display area; semiconductor islands at each cross point and in peripheral circuit area; a first gate insulating film formed on each pixel semiconductor island; a first gate made of a first wiring layer and formed on said first gate insulating film; a second gate insulating film thinner than the first gate insulating film formed on peripheral circuit semiconductor island; and a second gate electrode made of a second wiring layer and formed on the second gate insulating film, wherein the pixel transistor semiconductor island, first gate insulating film and first gate electrode constitute a pixel transistor, and the scanning line includes a lower layer made of the second wiring line and an upper layer made of the first wiring line connected to the lower layer.

Active matrix substrate for display device and its manufacture method

The present invention relates to a thin film transistor device formed on an insulating substrate of a liquid crystal display device and others, a method of manufacturing the same, and a liquid crystal display device. In structure, there are provided the steps of forming a negative photoresist film on a first insulating film for covering a first island-like semiconductor film, forming a resist mask that has an opening portion in an inner region with respect to a periphery of the first island-like semiconductor film by exposing/developing the negative photoresist film from a back surface side of a transparent substrate, etching the first insulating film in the opening portion of the resist mask, forming a second insulating film for covering the first insulating film and a conductive film thereon, and forming a first gate electrode and a second gate electrode by patterning the conductive film.

Thin film transistor device and method of manufacturing the same, and liquid crystal display device

A method for manufacturing a thin film transistor substrate includes a step of forming a plurality of island-like semiconductor films above an insulating transparent substrate; a step of forming a gate insulating film on each of the island-like semiconductor films; a step of forming first conductivity type LDD regions on both sides in the first island-like semiconductor film by leaving a channel region and forming a first conductivity type normally-on channel region having an impurity density equivalent to that of the LDD region in the second island-like semiconductor film; a step of forming a first gate electrode partially covering the LDD region and forming a second gate electrode above the normally-on channel region, and a step of forming a first conductivity type source/drain region having an impurity density higher than that of the LDD region in regions on the both sides of the gate electrode.

Thin film transistor substrate, liquid crystal display device provided with such thin film transistor substrate and method for manufacturing thin film transistor substrate

Thin film transistor device utilizing transistors of differing material characteristics

A thin film transistor substrate is provided whose structure allows for the formation of (i) a thick gate insulating film, (ii) a high pressure resistance TFT having a LDD region of a GOLD structure, and (iii) a low voltage TFT having a thin gate insulating film, with less number of production steps.

Thin film transistor substrate and manufacturing method for the same

A method of making a thin film transistor device, including forming and patterning a semiconductor film to form first and second semiconductor films in, respectively, low-voltage driven and high-voltage driven thin film transistor formation regions. The method also includes forming a first insulating film on the first and second semiconductor films, and forming a first gate electrode on the first insulating film in the low-voltage driven thin film transistor formation region. Additionally, a second insulating film is formed on the entire surface of the resultant structure above the substrate, and a second gate electrode is formed on the second insulating film in the high-voltage driven thin film transistor formation region. The method also includes etching the first and second insulating films, thus forming first and second gate insulating films below, respectively, the first and second gate electrodes, with the second gate insulating film being wider than the second gate electrode.

Method of manufacturing a thin film transistor device

To obtain a semiconductor device containing TFTs of different, suitable properties as display pixel TFTs and high-voltage, driver-circuit TFTs, the semiconductor device of the present invention includes: first and second islands-shaped polycrystalline silicon (p-Si) layers provided above an insulating substrate and having relatively large grain sizes; a third islands-shaped p-Si layer having relatively small grain sizes; a first gate insulating film provided on the first p-Si layer and having a first thickness; second and third gate insulating films provided on the second and third p-Si layers having second and third thicknesses which are not less than the first thickness; gate electrodes provided on the gate insulating films; n-type high-concentration source/drain regions formed by adding an n-type impurity to a high concentration outside channel regions; and second and third n-type low-concentration-source/drain regions provided between the channel regions and the n-type high-concentration source/drain regions of the second and third p-Si layers. The third n-type low-concentration source/drain regions have a higher impurity dose than the second n-type low-concentration source/drain regions.

Semiconductor device and manufacturing method thereof

A polysilicon film is formed in a predetermined region on a glass substrate, and then a gate insulating film and a gate electrode, whose width is narrower than the gate insulating film, are formed thereon. Then, an interlayer insulating film and an ITO film are formed on an overall surface. Then, n-type source/drain regions having an LDD structure are formed by implanting the n-type impurity into the polysilicon film. Then, an n-type TFT forming region and a pixel-electrode forming region are covered with a resist film, and then p-type source/drain regions are formed by implanting the p-type impurity into the polysilicon film in a p-type TFT forming region. Then, the resist film is left only in the pixel-electrode forming region and the resist film is removed from other regions. A pixel electrode is formed by etching the ITO film while using the remaining resist film as a mask.

In a method for manufacturing a TFT device, a metal thin film is formed on a gate insulation film. Patterning is performed to remove the metal thin film on a semiconductor layer, and phosphorous ions are implanted using the patterned metal thin film as a mask to form the source and drain regions. The patterned metal thin film is further patterned to form a gate electrode of an n-type TFT. Phosphorous ions are implanted using the gate electrode as a mask to form LDD regions between the source and drain regions and a channel region.

Thin film transistor device and method of manufacturing the same, thin film transistor substrate and display having the same

A method for producing a thin film transistor substrate includes the steps of: (i) depositing an amorphous semiconductor film on a transparent insulating substrate; (ii) patterning the amorphous semiconductor film so as to form insular amorphous semiconductor films, the step (ii) including a process (I) for forming, in respective stripe areas each of which is elongate in a first direction in a display area, a plurality of insular semiconductor films whose channel length is in line with the first direction, and a process (II) for forming, in an area including extended portions of the striped areas in a peripheral circuit area, a plurality of insular semiconductor films; (iii) polycrystallizing the insular semiconductor films in the peripheral circuit area so that the insular semiconductor films have high mobility in a second direction and polycrystallizing the insular semiconductor films in the display area so that the insular semiconductor films have high mobility in the first direction; and (iv) forming TFTs by using polycrystalline insular semiconductor films. In at least one peripheral circuit, a channel of a high speed TFT is positioned on a portion other than the extended portions of the stripe areas.

Growing community of inventors

Kawasaki, Japan

Kazushige Hotta