Mitsubishi Electric Corporation

Mitsubishi Denki Kabushiki Kaisha

Kazushi Yamayoshi

Shinsuke Ogata

Kenichi Miyamoto

Toru Takeguchi

Osamu Miyakawa

Naruhito Hoka

Tomoyuki Irizumi

Junichi Tsuchimichi

Takeshi Sonoda

Kazunori Inoue

Naoki Nakagawa

Kazuyuki Sugahara

Masami Hayashi

Takeshi Shimamura

Shinsuke Yura

Atsuhiro Sono

Ken Imamura

Kaoru Motonami

Koji Oda

Akio Nakayama

Takuji Imamura

Hiroyuki Fuchigami

Shinji Kawabuchi

Akihiko Hosono

Hiromasa Morita

Atsunori Nishiura

Syuuichi Kira

Koichi Takai

Kazutoshi Aoki

A liquid crystal display panel includes a semiconductor film, source and drain electrodes, a planarizing insulating film, first and second transparent conductive films, an insulating film, a pixel electrode, and a counter electrode. The semiconductor film overlaps a gate electrode on a substrate across a gate insulating film. The source and drain electrodes are separately provided on the semiconductor film. The planarizing insulating film includes an opening for partially exposing the source and drain electrodes on its bottom. The first and second transparent conductive films respectively come in contact with surfaces of the source and drain electrodes. The insulating film is provided on the planarizing insulating film so as to cover the opening and the first and second transparent conductive films. The pixel electrode is provided on the insulating film and is electrically connected to the drain electrode via the second transparent conductive film. The counter electrode is opposed to the pixel electrode.

Liquid crystal display panel and method of manufacturing the same

A channel layer is formed of an oxide semiconductor. A first insulating film is provided on the channel layer, a source line, and a drain electrode, and includes a drain contact hole which reaches the drain electrode. A pixel electrode is provided on the first insulating film, includes a connection conductive layer which is connected to the drain electrode by the drain contact hole, and is formed of a transparent conductive material. The pixel electrode is covered with a second insulating film. A common electrode is provided on the second insulating film, includes an opening which faces the pixel electrode in a thickness direction, and is formed of a transparent conductive material. A metal layer, in conjunction with a part of the common electrode, forms a laminated structure, and includes a light-shield part which overlaps the channel layer at least partially in plan view.

Thin-film transistor substrate and liquid crystal display

A touch panel includes: an transparent substrate; an X wiring line; a Y wiring line; and an inter-layer insulating film which electrically separates the X wiring line and the Y wiring line at an intersection at which the X wiring line and the Y wiring line intersect in a plan view. At the intersection, the bottom layer of one wiring line of the X wiring line and the Y wiring line continues on the lower surface side of the inter-layer insulating film, and layers of the one wiring line except the bottom layer are divided. Further, at the intersection, layers of the other wiring line of the X wiring line and the Y wiring line except the top layer of the other wiring line are divided, and the top layer of the other wiring line continues on the upper surface side.

Touch panel and method for manufacturing the same

A thin film transistor (TFT) located on a thin film transistor substrate includes a first insulating film formed so as to cover a gate electrode, a channel layer that is formed at a position on the first insulating film overlapping the gate electrode and formed of an oxide semiconductor, a second insulating film formed on the channel layer, and a third insulating film formed so as to cover the second insulating film. A source electrode and a drain electrode are formed on the third insulating film. Each of the source electrode and the drain electrode is connected to the channel layer through the corresponding one of contact holes penetrating the second insulating film and the third insulating film.

Thin film transistor substrate including thin film transistor formed of oxide semiconductor and method for manufacturing the same

The present invention includes a thin-film transistor, a flattened film having a flattened top surface and having a contact hole formed thereon, and a pixel electrode and a common line which are disposed on the top surface of the flattened film. The common line includes a common metal line, and the pixel electrode has a connection portion formed in the contact hole and electrically connected to the thin-film transistor. The connection portion of the pixel electrode includes a connection metal film made of the material same as the material for the common metal line of the common line.

A liquid crystal display panel includes: a transparent insulating substrate; a signal line and a scanning line arranged in a display region on the transparent insulating substrate and crossing each other in a matrix; a protective insulating film arranged so as to cover at least the signal line and the scanning line from above; a first insulating film that covers the protective insulating film from above; and a first contact hole that penetrates at least the first insulating film and the protective insulating film to reach a surface of a common interconnect. The first contact hole has a bottom and an inner side surface covered with a first stacked film composed of a first transparent conductive film made of the same material as the lower electrode and a second transparent conductive film made of the same material as the upper electrode.

The organic insulating film has an opening through which the drain electrode is partially exposed. The opening has a side wall extending from above the drain electrode. The pixel electrode has a contact portion that is in contact with the drain electrode in the opening of the organic insulating film, a wiring portion that extends directly on the side wall of the organic insulating film from the contact portion, and a body portion that is linked to the wiring portion and is located on the organic insulating film. The interlayer insulating film covers the pixel electrode. The interlayer insulating film covers the source electrode and directly covers the semiconductor film between the source-electrode side surface and the drain-electrode side surface. The common electrode has fringes opposed to the pixel electrode via the interlayer insulating film.

Liquid crystal display panel and method for manufacturing liquid crystal display panel

A method of manufacturing a display apparatus having a display material provided between a pair of substrates arranged to face each other, the method comprises: bonding a first mother substrate and a second mother substrate to form a cell substrate from which one or more panels are bring out; thinning one of the first mother substrate and the second mother substrate after forming the cell substrate; forming a parallax barrier layer that separates a display image and a light transmission layer to be stacked on the parallax barrier layer on a surface of the one of the first mother substrate and the second mother substrate at an outer-side face of the cell substrate; and dividing the cell substrate into one or more panels.

Display apparatus and method of manufacturing the same

A liquid crystal display panel includes a thin film transistor disposed on an insulating substrate in a display region, an external wiring for connecting the thin film transistor to a terminal electrode, and a planarized film disposed on the thin film transistor, and having a planarized upper surface. The planarized film is not disposed, or a planarized film having a smaller film thickness than that of the planarized film in the display region is disposed, above the external wiring in a frame region.

Display panel, method of manufacturing the same, and liquid crystal display panel

A liquid crystal display includes: first and second transparent substrates located such that inner main surfaces face each other with a gap being provided therebetween and a liquid crystal layer is held between the substrates; a parallax barrier provided on an outer main surface of the first transparent substrate and optically separating pixels displaying an image into pixels visually recognized in a specific direction and pixels visually recognized in another specific direction; and a plurality of switching elements, arrayed on the inner main surface of the second transparent substrate, for applying voltage to drive the liquid crystal; wherein the parallax barrier includes a plurality of transmissive portions arrayed to transmit light and a plurality of light blocking portions provided respectively around the transmissive portions to block light, and each of the light blocking portions includes two or more layered light blocking films.

Liquid crystal display and production method thereof

A display device includes a laminated wiring formed of a low-resistance conductive film, and a low-reflection film mainly containing Al and functioning as an antireflective film which are sequentially arranged on a transparent substrate, a wiring terminal part provided at an end part of the laminated wiring and has the same laminated structure as that of the laminated wiring, and an insulating film for covering the laminated wiring and the wiring terminal part, in which the insulating film side serves as a display surface side, the wiring terminal part has a first opening part penetrating the insulating film and the low-reflection film and reaching the low-resistance conductive film, and an outer peripheral portion of the first opening part has a laminated structure of the low-resistance conductive film, the low-reflection film, and the insulating film, in at least one part.

Display device and method for manufacturing the same

Display device

A method of crystallizing an amorphous semiconductor film, the method comprising the steps of: forming a gate electrode on a transparent insulating substrate; forming a gate insulating film on the transparent insulating substrate and on an upper part of the gate electrode; forming an amorphous semiconductor film on the gate insulating film; forming a light-transmissive insulating film on the amorphous semiconductor film; forming a metal film having an opening on the light-transmissive insulating film; irradiating laser light onto both a region of the light-transmissive insulating film exposed by the opening and the metal film, which is used as a mask for shielding the laser light; and performing laser annealing to make the laser light to be absorbed through the light-transmissive insulating film into a region of the amorphous semiconductor film exposed by the opening, so that the amorphous semiconductor film is heated and converted to a crystalline semiconductor film.

Method of crystallizing amorphous semiconductor film, thin-film transistor, semiconductor device, display device, and method of manufacturing the same

An active matrix substrate includes a plurality of pairs of a TFT including a gate electrode and a gate insulating film formed on an insulating substrate, a channel layer made of at least one of a crystalline semiconductor film and an amorphous semiconductor film, and a source electrode and a drain electrode, and a pixel electrode arranged in an array. The channel layer is formed within a formation area of the gate electrode, the source electrode and the drain electrode are formed within a formation area of the channel layer, a source line is formed above the gate insulating film in a position spaced from the gate electrode, and the source line is connected to the source electrode through a connection line made of an oxide conductive film formed on top of the source electrode and extending from the top of the source electrode.

Growing community of inventors

Kumamoto, Japan

Kazushi Yamayoshi