Sony Corporation

Kazushi Wada

Kouichi Harada

Kazuya Yonemoto

Tetsuya Iizuka

Junichi Furukawa

Koichi Harada

Takaaki Sarai

Mitsuru Sato

Takeshi Matsuda

Satoshi Nakamura

Yasuhiro Ueda

Yoshinori Toumiya

Nobuhiko Umezu

Shuji Otsuka

Yoichi Otsuka

Michio Yamamura

A solid-state imaging device includes a layer including an on-chip lens above a sensor section, and the layer including the on-chip lens is composed of an inorganic film which transmits ultraviolet light. The layer including the on-chip lens may further include a planarizing film located below the on-chip lens. A method of fabricating a solid-state imaging device includes the steps of forming a planarizing film composed of a first inorganic film, forming a second inorganic film on the planarizing film, forming a lens-shaped resist layer on the second inorganic film, and etching back the resist layer to form an on-chip lens composed of the second inorganic film. The first inorganic film constituting the planarizing film and the second inorganic film constituting the on-chip lens preferably transmit ultraviolet light.

Solid-state imaging device and method of fabricating the same

At a transfer electrode to which a normally low transfer pulse is applied, the time period in which the negative potential is applied is long, and an electric field is applied to a gate insulating film, such that the device's reliability decreases. To overcome this drawback, a negative side potential (VL') of a normally low vertical transfer pulse (V&#x3c6;, V&#x3c6;) is set smaller in the absolute value than a negative side potential (VL) of a normally high vertical transfer pulse (V&#x3c6;, V&#x3c6;). Thereby, while the influence of increase in the dark current is being suppressed, the electric field being applied to the gate insulating film is reduced.

Solid state imaging device, driving method for solid state imaging device, imaging apparatus, and image input apparatus

A method for manufacturing a solid-state imaging device, in which a photoelectric conversion portion to receive light with a light-receiving surface and generate a signal charge is disposed in a substrate, includes the steps of forming a metal light-shield layer above the substrate and in a region other than a region corresponding to the light-receiving surface, forming a light-reflection layer above the metal light-shield layer, and forming a photoresist pattern layer from a negative type photoresist film formed above the light-reflection layer, by conducting an exposing treatment and a developing treatment, wherein in the forming of the light-reflection layer, the light-reflection layer includes a shape corresponding to a pattern shape of the photoresist pattern layer, and the light-reflection layer is formed in such a way as to reflect exposure light to the photoresist film in conduction of the exposing treatment in the forming of the photoresist pattern layer.

Solid-state imaging device, camera, electronic apparatus, and method for manufacturing solid-state imaging device

A solid-state image pickup device for preventing crosstalk between adjacent pixels by providing an overflow barrier at the deep potion of a substrate. A partial P type region is provided at the predetermined position of a lower layer region of the vertical transfer register and a channel stop region. This P type region adjusts potential in the lower layer region of the vertical transfer register and the channel stop region. Accordingly, since the potential in the lower layer region of the vertical transfer register and the channel stop region at both sides of the lower layer region is low, electric charges photoelectrically-converted by the sensor region are blocked by this potential barrier and cannot be diffused easily.

Solid-state image pickup device for preventing cross-talk between adjacent pixels and manufacturing method thereof

Solid-state imaging device and its manufacturing method

A solid-state imaging device having a gate structure including an oxide film and a nitride film includes upper layer films (for example, a planarization film, an insulating film, and a protective film) allowing ultraviolet rays having a wavelength of 400 nm or less to pass therethrough; and a metal made shield film or an organic film capable of absorbing the ultraviolet rays formed in such a manner as to cover a region of the gate structure (for example, an output gate and a reset gate), excluding a light receiving portion and a transfer portion, of the solid-state imaging device. With this configuration, it is possible to prevent the shift of a threshold voltage Vth, and hence to enhance the reliability of the transfer or reset of electric charges.

Solid-state imaging device

A solid-state imaging device includes a second conductive type impurity region formed in a first conductive type semiconductor substrate in an area corresponding to a pixel area, a high-resistivity semiconductor layer of the first conductive type formed on the semiconductor substrate including the impurity region, and an ion-implanted region of the first conductive type formed in at least one of the semiconductor substrate and the high-resistivity semiconductor layer in a peripheral area other than the pixel area. A method of fabricating the solid-state imaging device is also disclosed.

A CCD solid state imaging device can reduce a smear component. This CCD solid state imaging device comprises a plurality of photosensor sections (10) arranged in a matrix fashion, a vertical transfer register (5) having a transfer electrode (16) disposed at every column of the photosensor sections, a shunt line layer (33) connected to the transfer electrode (16) on the vertical transfer register (5), and a photo-shield layer (38) formed so as to surround the photosensor section 10 through an interlayer insulating layer (37) which covers the shunt layer (33), in which the interlayer insulating layer (37) is formed under an overhang portion (38a) of the photo-shield layer (38) to the photosensor section (10).

Solid state imager with reduced smear

Method of making a solid state imager with reduced smear

A CCD solid state imaging device can reduce a smear component. This CCD solid state imaging device comprises a plurality of photosensor sections (10) arranged in a matrix fashion, a vertical transfer register (5) having a transfer electrode (16) disposed at every column of the photosensor sections, a shunt line layer (33) connected to the transfer electrode (16) on the vertical transfer register (5), and a photo-shield layer (38) formed so as to surround the photosensor section 10 through an interlayer insulating layer (37) which covers the shunt layer (33), in which the interlayer insulating layer (37) is not formed under an overhang portion (38a) of the photo-shield layer (38) to the photosensor section (10).

Solid state imager with reduced smear and method of making the same

Light emitting devices are formed on a surface of a solid state imaging device and are used as illumination light sources. In a solid state imaging device for use in an electro-endoscope or the like, an illumination light source need not be provided independently of the solid state imaging device. Hence, the electro-endoscope can be miniaturized and simplified in structure.

Solid state imaging device having a light emitting diode

A CCD shift register has a final transfer electrode which is formed only by a first polysilicon layer, and an output gate electrode which is formed by a second polysilicon layer. Under the output gate electrode, there is formed a doped region which is formed by a doping step of self alignment, independently of a doped region under the transfer electrodes. Therefore, it is possible to choose the impurity concentration and to adjust the potential level under the output gate electrode freely.

CCD shift register

An interline transfer or frame interline transfer CCD solid image sensor is adapted to read out signal charges from light receiving sections of a matrix array by means of vertical charge transfer sections and horizontal charge transfer sections. A plurality of horizontal charge transfer sections are formed for lowering the horizontal transfer frequency. The voltage transition in the transfer gate across the horizontal charge transfer sections is caused to occur stepwise or temporally slowly to improve the transfer efficiency across the horizontal charge transfer sections. A smear drain region for sweeping out unnecessary charges is formed along the horizontal charge transfer sections. The transfer electrode of the horizontal charge transfer sections connected to the busline wiring is patterned to clear contact holes provided in the smear drain region to provide for positive overflow without increasing the chip area.

Solid state image sensor

A structure of a solid-state image sensing device applicable to an HDVS is disclosed in which at least one of the transmission paths for the drive pulses used for driving vertical registers and horizontal registers can achieve reduced propagation delays and signal distortions of the drive pulses. In the first preferred embodiment, a control gate for controlling the transfer of signal charges between the horizontal registers is constituted by a first polycrystalline silicon layer, a metal wiring layer is formed and is connected to the first polycrystalline silicon layer via contact regions and transfer electrodes provided for driving the horizontal registers are constituted by second and third semiconductor layers placed between the first polycrystalline silicon layer and the metal wiring layer without contacting the contact regions. In the second preferred embodiment, the control gate is formed of a wiring layer placed above the semiconductor layers constituting the transfer electrodes of the horizontal registers. In the third preferred embodiment, shunt wiring films are formed independently on the transfer electrodes for the vertical registers of an image portion and on the transfer electrodes for those of a storage portion.

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Kanagawa, Japan

Kazushi Wada