Nec Corporation

Elpida Memory, Inc.

Japan Science and Technology Agency

Sanei Kasei Co., Ltd.

Canon Kabushiki Kaisha

Kazushi Suzuki

Kenji Aoki

Takeshi Ono

Yoshihiro Takaishi

Shigenobu Sekine

Hiroji Sato

Takeharu Nagai

Hiroshi Yoshino

Takayuki Nakata

Yoshiyuki Arai

Kenji Sakaguchi

Minoru Narita

Yuko Kawasaki

Mitsuhisa Hirata

Takayuki Kaneso

Koichi Tono

Yoshiki Kuwabara

Keiji Okada

A biological specimen containing a chemiluminescence substance that generates chemiluminescence is observed in a living state under a microscope. The microscope includes a light source that outputs control light that changes the state of the chemiluminescence, a defining unit that defines the radiation pattern of the control light with which an observation surface of the biological specimen is irradiated, and a detector that detects the chemiluminescence from the biological specimen.

Microscope and method for observing biological specimen in living state

To detect an abnormal value in a satellite positioning system with high precision even when the observation environment changes or there is the time series correlation between data. An abnormal value index calculation unitcalculates an abnormal value index at each time of time-series data such as a pseudo distance between each artificial satellite and a receiver in the satellite positioning system or the like. A dynamic model forming unitdynamically forms a model from the abnormal value index in a predetermined period and calculates a change point index from the time-series abnormal value index based on the dynamic model. The change point index is an index for determining whether the time-series is a one-shot outlier from a dynamic model or the dynamic model itself of input data changes when the time-series value which suddenly increases and decreases exists. The abnormal value detection unitcompares the change point index with a threshold value set in advance and detects the abnormal value index corresponding to the change point index at that time as an abnormal value when the value of the change point index is greater than the threshold value.

Abnormal value detection apparatus for satellite positioning system, abnormal value detection method, and abnormal value detection program

To maintain the safety by avoiding deterioration in the positioning accuracy through making SBAS satellite navigation data used in a ground system and in an airborne system consistent by employing GBAS. The system includes: a ground system which estimates errors contained in ranging signals received from the navigation satellites, and formats and transmits correction information for correcting the estimated errors; and an airborne system which calculates differential GPS positioning based on the ranging signals received from the navigation satellites and the formatted correction information, and displays a displacement from a regulated route. The ground system notifies update, when SBAS satellite navigation data used for generating the correction information is updated, by adding information regarding update of navigation data to the correction information. The airborne system detects the transmitted update notification of the SBAS satellite navigation data, and calculates the differential GPS positioning by switching to the updated navigation data.

SBAS navigation data update notifying system and method used in GBAS

An object of the present inventions is to overcome a problem that the presence of a metal film, which is opaque to a visible light, between a lower layer alignment mark and a photoresist prevents the detection of the lower layer alignment mark, to make the pattern formation difficult. In the present inventions, an insulating film is placed beneath the alignment mark in structure; an alignment mark consisting of said multi-layered film comprising an alignment mark layer and the insulating film, which constitutes a stepped part with an increased difference in level, is first formed, inside a mark hole, in a manner of self-alignment; and then the metal film which is the very cause of the above problem is formed thereon. Since the metal film itself has a stepped shape corresponding to the alignment mark, alignment can be made with great accuracy.

Method of manufacturing semiconductor device using alignment mark and mark hole

A semiconductor-device manufacturing method includes forming an element separating insulating film on a semiconductor substrate; forming a gate multilayer film for forming a gate electrode thereon; removing the gate multilayer film in an alignment mark forming area positioned on the element separating insulating film; forming a pattern of a first conductive film in the element forming area; forming an alignment mark of the first conductive film, used in photolithography, in the alignment mark forming area surrounded by the gate multilayer film; forming an inter-layer insulating film thereon; removing the inter-layer insulating film in the alignment mark forming area, so that it remains on the gate multilayer film around the alignment mark forming area; removing or thinning the element separating insulating film around the alignment mark; and forming a pattern of a second conductive film on the inter-layer insulating film by performing alignment of the photolithography by using the alignment mark.

Method of manufacturing a semiconductor device

The method for preparation of sintered permanent magnets according to the present invention comprises the steps of: mixing fully fine powder of a crystalline mother alloy for permanent magnet containing a rare-earth element, Fe and B as the essential components with fine powder of zinc oxide, compaction molding the resulted mixture in the presence of a magnetic field, sintering the compacted mixture in vacuum to cause generation of oxygen and metallic zinc by thermal decomposition of the zinc oxide; segregation of a part of metallic component in the mother alloy at the boundary and inside of the mother alloy crystal; formation of amorphous metallic oxide by forced oxidation of the segregated metal with the generated oxygen; crystallization of the amorphous metallic oxide; formation of an epitaxial junction between the crystallized metallic oxide and the mother alloy crystal; and evaporation of the metallic zinc into the vacuum, and quenching the sintered compact.

Method for preparation of sintered permanent magnet

Growing community of inventors

Tokyo, Japan

Kazushi Suzuki