Panasonic Corporation

Kazushi Nakazawa

Manabu Yanagihara

Tsuyoshi Tanaka

Yasuhiro Uemoto

Tetsuzo Ueda

Tatsuo Morita

Masahiro Hikita

Akiyoshi Tamura

Daisuke Shibata

Hiroaki Ueno

Satoshi Nakazawa

A semiconductor device according to the present invention includes a substrate; a nitride semiconductor layer formed above the substrate and having a laminated structure including at least three layers; a heterojunction bipolar transistor formed in a region of the nitride semiconductor layer; and a field-effect transistor formed in a region of the nitride semiconductor layer, the region being different from the region in which the heterojunction bipolar transistor is formed.

Semiconductor device

A semiconductor device includes a first semiconductor layer which is formed above a substrate, a Schottky electrode and an ohmic electrode which are formed on the first semiconductor layer to be spaced from each other and a second semiconductor layer which is formed to cover the first semiconductor layer with the Schottky electrode and the ohmic electrode exposed. The second semiconductor layer has a larger band gap than that of the first semiconductor layer.

Semiconductor device and method for manufacturing the same

A bidirectional switch includes a plurality of unit cellsincluding a first ohmic electrode, a first gate electrode, a second gate electrode, and a second ohmic electrode. The first gate electrodesare electrically connected via a first interconnectionto a first gate electrode pad. The second gate electrodesare electrically connected via a second interconnectionto a second gate electrode pad. A unit cellincluding a first gate electrodehaving the shortest interconnect distance from the first gate electrode padincludes a second gate electrodehaving the shortest interconnect distance from the second gate electrode pad

Bidirectional switch

In FET, a second nitride semiconductor layer is provided on a first nitride semiconductor layer, and a source electrode and a drain electrode are each provided to have at least a portion thereof in contact with the second nitride semiconductor layer. A concave portion is formed in the upper surface of the second nitride semiconductor layer to be located between the source electrode and the drain electrode. A gate electrode is provided over the concave portion to cover the opening of the concave portion.

Nitride based semiconductor device with concave gate region

A semiconductor device includes: a semiconductor layer made of a group-III nitride semiconductor and having a first surface and a second surface opposed to the first surface; a Schottky electrode formed on the first surface of the semiconductor layer; and an ohmic electrode electrically connected to the second surface of the semiconductor layer. The semiconductor layer has, in at least the upper portion thereof, highly-resistive regions selectively formed to have a high resistance.

A nitride semiconductor device includes: a substrate; a nitride semiconductor layer formed on a main surface of the substrate and having a channel region through which electrons drift in a direction parallel to the main surface; and a plurality of first electrodes and a plurality of second electrodes formed spaced apart from each other on an active region in the nitride semiconductor layer. An interlayer insulating film is formed on the nitride semiconductor layer. The interlayer insulating film has openings that respectively expose the first electrodes and has a planarized top surface. A first electrode pad is formed in a region over the active region in the interlayer insulating film and is electrically connected to the exposed first electrodes through the respective openings.

Growing community of inventors

Osaka, Japan

Kazushi Nakazawa