Hitachi, Ltd.

Hitachi Ulsi Systems Co., Ltd.

Other

Renesas Technology Corp.

Hitachi Engineering Co., Ltd.

Hitachi Ulsi Engineering Corp.

Kazushi Fukuda

Shuji Ikeda

Yasuko Yoshida

Hideo Miura

Norio Suzuki

Hirohiko Yamamoto

Akira Takamatsu

Shinichi Horibe

Masamichi Kobayashi

Hirofumi Shimizu

Yasushi Matsuda

Toshio Nozoe

Norio Ishitsuka

Keiichi Yoshizumi

Tadashi Iizuka

Soichiro Hashiba

Fumiyuki Kanai

Takashi Hashimoto

Toshiaki Yamanaka

Kousuke Okuyama

Kazuo Yoshizaki

Yusaku Nakagawa

Kazushi Tomita

Tsuyoshi Tabata

Yasuo Kamitsuma

Koichi Imato

Kohji Yamasaki

Chiemi Hashimoto

Motoko Kawashima

Junichi Takano

Mitsugu Oshima

Hideki Nakamura

Naotaka Hashimoto

Yutaka Hoshino

Shinji Nishihara

Noriyuki Ohnaka

Makoto Saeki

Kyoichiro Asayama

Shoichi Nakashima

Akihiko Ishiyama

Kiyoshi Nagai

Satoru Haga

Eri Okamoto

Hideki Yazawa

Shin Ishihara

Isao Ishi

Seiichi Ariga

Yuuki Koide

A process of producing a semiconductor device having a highly reliable groove isolation structure with a desired radius of curvature formed at the groove upper edge and without formation of any step. The device is produced by reducing the stress generation around the groove upper edge of an element isolation groove on a semiconductor substrate, thereby optimizing the shape of an element isolation groove and making the device finer and improving the device electric characteristics.

Semiconductor device and process for producing the same

A semiconductor device having a highly reliable groove isolation structure with a desired radius of curvature formed at the groove upper edge and without formation of any step, there is produced by reducing the stress generation around the groove upper edge of an element isolation groove on a semiconductor substrate, thereby optimizing the shape of an element isolation groove and making the device finer and improving the device electric characteristics.

Semiconductor device and process for producing the sme

A silicon oxide film 2 which is exposed from a side wall of a groove 4a is etched to displace the silicon oxide film 2 backward toward an active region. The displacement amount is set to be equal to or more than a film thickness (Tr) of a silicon oxide film 5 to be formed on an inner wall of the groove 4a in a later thermal oxidation step and equal to or less than twice the film thickness (Tr) thereof. A shoulder portion of the groove 4a can be rounded by a low-temperature heat treatment at 1000.degree. C. or less, by controlling a heat treatment period such that the film thickness (Tr) of the silicon oxide film 5 is more than the film thickness (Tp) of the silicon oxide film 2 and equal to or less than three times the film thickness (Tr) thereof (Tp&lt;Tr.ltoreq.3Tp)

Method of manufacturing a semiconductor integrated circuit device

A SRAM having its memory cell constructed to include transfer MISFETs to be controlled by word lines and a flip-flop circuit having driver MISFETs and load MISFETs. Plate electrodes of large area fixed on predetermined power source lines are arranged over the load MISFETs such that the plate electrodes over the offset region of the load MISFETs are formed with an opening. A silicon nitride film having a thickness permeable to hydrogen but not to humidity is formed over the transfer MISFETs and the driver MISFETs formed over the main surface of a semiconductor substrate and the load MISFETs formed of a polycrystalline silicon film deposited on the driver MISFETs.

Semiconductor integrated circuit device having capacitance element and

When the source and drain regions (an n.sup.- type semiconductor region and an n.sup.+ type semiconductor region) of a complementary MISFET and a p-type semiconductor region for use as a punch-through stopper are formed in a p-type well in a substrate having a p- and an n-type well, p-type impurities for the punch-through stopper are suppressed from being supplied to the feeding portion (an n.sup.+ type semiconductor region) of the n-type well.

Process for producing semiconductor integrated circuit

Semiconductor integrated circuit device and process of manufacturing the

In depositing a silicon oxide film which constitutes part of a final passivation film onto a bonding pad formed on an interlayer insulating film, the silicon oxide depositing step is divided in two stages, and after the first deposition, the bonding pad is once exposed by etching, then the second deposition is performed, whereby the silicon oxide film which has thus been deposited in two stages is formed over a fuse element formed under the interlayer insulating film, while on the bonding pad is formed only the silicon oxide film deposited in the second stage. As a result, at the time of etching polyimide resin, silicon nitride film and silicon oxide film successively to expose the bonding pad, there remains a sufficient thickness of insulating film between the bottom of an aperture which is formed at the same time and the fuse element. Thereafter, an electrical test is conducted while applying a probe to the bonding pad and, where required, the fuse element located under the aperture is cut.

Method for manufacturing semiconductor integrated circuit device having

A roller of a rotary type compressor is made of an iron base alloy essentially consisting of 2.0 to 3.9% carbon, 2.0 to 3.0% Si, 0.3 to 1.0% Mn, up to 0.10% S, more than zero and not more than 0.50% V, 0.3 to 1.0% P, 0.01 to 0.5% Sb, and balance of Fe and incidental impurities. Preferably, the iron base alloy further includes 0.001 to 0.5% B. This roller is suitable when hydrofluorocarbon is used as a refrigerant.

Iron-base alloy for rotary type compressors

A sliding structure such as a compressor and etc. comprising a member made of an iron base material and another member having a porous ceramic layer slidably contacted with the iron base member, wherein the surface portion of the iron base member has both a porous oxide film containing tri-iron tetroxide as a main constituent, and an oxynitride layer formed under the oxide film.

Sliding structure such as compressor or the like

A sliding member of an iron-based non-porous material, such as vane, of a rotary compressor has a sliding surface processed by a surface treatment in which the surface is subjected to oxidizing and nitriding to form an oxidized and nitrided layer thereon. The surface is then subjected to a steam-treatment in which water is caused to react with components of the oxidized and nitrided layer to form a layer of oxidized iron of a porous network structure disposed outwardly of the oxidized and nitrided layer. The oxidized iron layer is composed mainly of tri-iron tetroxide and softer than the oxidized and nitrided layer.

Rotary compressor having oxidizing and nitriding surface treatment

Growing community of inventors

Ome, Japan

Kazushi Fukuda