Denso Corporation

Nippon Soken, Inc.

Other

Nippondenso Co., Ltd.

Kazushi Asami

Tsuyoshi Fukada

Yoshimi Yoshino

Muneo Yorinaga

Takahiko Yoshida

Yukihiro Takeuchi

Kazuhiko Kano

Junji Oohara

Yasuhiro Kitamura

Shinji Yoshihara

Akihiko Teshigahara

Hiroshi Muto

Kazuki Arakawa

Yasushi Matsuhiro

Hiroshi Ueda

Minekazu Sakai

Inao Toyoda

Toshio Yamamoto

Kazuhiko Sugiura

Kazuhiko Miura

Takeshi Ito

Minoru Murata

Hirofumi Higuchi

Seiki Aoyama

Seiji Fujino

Kenichi Yokoyama

Hayaki Teramoto

Yuuki Inagaki

Tatsuhiko Nonoyama

Kazuyuki Horie

Masakazu Kanosue

Hiroshige Sugito

Shoji Ozoe

Masakazu Terada

Takayuki Ishikawa

Takeshi Itou

Kiwamu Naito

Hajime Matsuhashi

Tetsuo Y Shioka

A semiconductor device has a semiconductor substrate where a plurality of elements or penetration electrodes are arranged and a trench is arranged to insulate and separate the plurality of elements or penetrating elements by surrounding the plurality of elements or penetration electrodes. The trench is arranged to penetrate both sides of the semiconductor substrate, and has an inner part where a space is arranged. Accordingly, it is possible to configure a semiconductor device having a structure to suppress insulation breakdown while simplifying a manufacturing process and improving yield of product manufacture.

Semiconductor device and manufacturing method for the same

In a manufacturing method for a semiconductor device having a coil layer part on a substrate, two support substrates each having a flat surface are prepared, and a component member is formed on the flat surface of each of the support substrates. The component member includes a wiring portion having a predetermined pattern and an insulation film surrounding the wiring portion. The wiring portion is provided with a connecting portion exposing from the insulation film. A coil layer part is formed by opposing and bonding the component members formed on the support substrates to each other while applying pressure in a condition where the flat surfaces of the support substrates are parallel to each other. A coil is formed in the coil layer part by connecting the wiring portions through the connecting portions.

Semiconductor device capable of restricting coil extension direction and manufacturing method thereof

A semiconductor device includes a substrate, a first single conductor, a single insulator, and a second single conductor. The substrate includes first and second regions located adjacent to each other. The first region has blind holes, each of which has an opening on a front surface of the substrate. The second region has a through hole penetrating the substrate. A width of each blind hole is less than a width of the through hole. The first single conductor is formed on the front surface of the substrate in such a manner that an inner surface of each blind hole and an inner surface of the through hole are covered with the first single conductor. The single insulator is formed on the first single conductor. The second single conductor is formed on the single insulator and electrically insulated form the first single conductor.

Semiconductor device and method of manufacturing the same

In a process for forming trenches having M different widths in a substrate, a passivation step and an etching step are alternately performed. The passivation step includes depositing a passivation layer on a bottom of the trenches by converting gas introduced in a chamber into plasma. The etching step includes removing the passivation layer on the bottom of the trenches and applying reactive ion etching to the bottom to increase a depth of the trenches. The etching step further includes setting energy for the reactive ion etching to a predetermined value when the passivation layer on the bottom of the trench having the Nth smallest width is removed. The value allows the etching amount of the trench having the Nth smallest width to be equal to or greater than the etching amount of the trench having the (N+1)th smallest width.

Semiconductor device manufacturing method

An angular rate sensor comprises a piezoelectric film having a first and a second surfaces forming an x-y plane and utilizes a perturbation mass coherently vibrating elastic acoustic waves on which a Coriolis force acts when the angular rate sensor undergoes a rotary motion about an x-direction. A first elastic acoustic wave is excited in the piezoelectric film by a driving transducer and a second elastic acoustic wave generated by the Coriolis force proportional to an angular rate of the rotary motion of the angular rate sensor itself is detected by the detecting transducer. The angular rate sensor further comprises at least a first electrode disposed on the first surface of the piezoelectric film for discharging a surface charge caused due to piezoelectric effect at the lower surface of the film in which the first elastic acoustic wave is excited.

Angular rate sensor

An acceleration sensor includes: a semiconductor substrate including a support layer and a semiconductor layer, which are stacked in a first direction; a movable electrode and a fixed electrode; and a trench. The movable electrode separately faces the fixed electrode by sandwiching the trench along with a second direction. The trench has a detection distance in the second direction. The movable electrode is movable along with the first direction when acceleration is applied. The movable electrode has a bottom apart from the support layer. The width of the movable electrode along with the second direction is smaller than the width of the fixed electrode. The thickness of the movable electrode along with the first direction is smaller than the thickness of the fixed electrode.

Acceleration sensor and method for manufacturing the same

A method for manufacturing a semiconductor device having a movable portion includes the steps of: forming a trench on a semiconductor layer so that the trench reaches an insulation layer; and forming a movable portion by etching a sidewall of the trench so that the semiconductor layer is separated from the insulation layer. The steps of forming the trench and forming the movable portion are performed by a reactive ion etching method. The insulation layer disposed on the bottom of the trench is prevented from charging positively in the step of forming the trench. The insulation layer disposed on the bottom of the trench is charged positively in the step of forming the movable portion.

Method for manufacturing movable portion of semiconductor device

An optical device includes a semiconductor substrate having an opening, a support member disposed on the substrate, and a movable portion disposed on the opening of the substrate. The movable portion is supported by the support member so that the movable portion is movable. The device has a large scanning angle. Further, the device can scan widely at any frequency.

Optical device having movable portion and method for manufacturing the same

A semiconductor dynamic quantity sensor, for example, an acceleration sensor is formed on a SOI substrate having an activation layer and a supporting layer with an oxide film interposed therebetween. A structure for the sensor is formed in the activation layer. An opening is formed in the supporting layer and the oxide film to expose the structure. In this sensor, stress layer is formed in the activation layer at a side contacting the oxide film. The stress layer is removed at a region facing the opening to prevent the structure from cambering.

Semiconductor dynamic quantity detecting sensor and manufacturing method of the same

A capacitance type humidity detecting sensor has two electrodes opposing each other with a gap interposed therebetween to form a capacitor on a silicon substrate with a silicon oxide film formed on a surface thereof. A moisture-sensitive film is formed so as to cover the two electrodes with a silicon nitride film interposed therebetween. The silicon nitride film protects the two electrodes from moisture passing through the moisture-sensitive film. The capacitance formed between the two electrodes changes in accordance with ambient humidity. A switched capacitor circuit formed in a circuit element portion processes a signal indicative of a change in the capacitance formed between the two electrodes.

Capacitance type humidity sensor and manufacturing method of the same

In a pair of electrodes where a potential difference is changed in accordance with acidity or basicity of oil, a reference electrode is made of cobalt or a cobalt alloy, and a sensitive electrode is made of tungsten or a tungsten alloy. The sensitive electrode is used in combination with the reference electrode. Accordingly, it is possible to provide a pair of electrodes for detecting the acidity or the basicity of the oil which use a novel electrode material not hazardous to the environment and at the same time, suited for use in a semiconductor fabrication technique.

Pair of electrodes for detecting acidity or basicity of oil

In a method for manufacturing a semiconductor acceleration sensor, a movable portion including a mass portion and movable electrodes is formed in a single crystal silicon thin film provided on a silicon wafer through an insulation film by etching both the single crystal silicon thin film and the silicon wafer. In this case, the movable portion is finally defined at a movable portion defining step that is carried out in a vapor phase atmosphere. Accordingly, the movable portion is prevented from sticking to other regions due to etchant during the manufacture thereof.

Method for manufacturing semiconductor dynamic quantity sensor

An angular velocity sensor includes a tuning-fork oscillator having a pair of arms jointed by a trunk, the pair of arms extending in parallel to each other, first and second driving piezoelectric elements arranged only on one surface of the trunk with a gap therebetween in an extending direction of the arms, and angular velocity detecting piezoelectric elements arranged on surfaces of the arms in parallel with the one surface of the trunk on which the first and second piezoelectric elements are arranged.

Angular velocity sensor

An angular velocity sensor comprises a driving element, a detecting element, and a feedback element, all of which are disposed on an element forming face of an oscillator. An electrostatic capacitance of the feedback element is set to be equal to that of the detecting element. As a result, a synchronous detection circuit can reduce the offset signal due to a phase difference between signals from the feedback element and the detecting element.

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Okazaki, Japan

Kazushi Asami