Osaka Titanium Technologies Co., Ltd.

Honda Motor Co., Ltd.

Rohm Co., Ltd.

Sumitomo Titanium Corporation

Kazuomi Azuma

Tadashi Ogasawara

Yoshitake Natsume

Kenji Taruya

Koji Nakazawa

Masanori Okabe

Masato Kita

Munetoshi Watanabe

Takashi Onishi

Koichi Mori

Toshiharu Iwase

Jyunji Kido

Provided is a sputtering target which can give a high water barrier property and a high flexibility to a sputtering film, can keep a high film forming rate certainly in sputtering, and can make damages to an objective substance wherein a film is to be formed as small as possible. In order to realize this, a mixed powder which contains 20 to 80% by weight of a SiO powder, the balance of the powder being made of a TiOpowder and/or a Ti powder, is pressed and sintered. The sintered body has a composition of Si&#x3b1;Ti&#x3b2;O&#x3b3; wherein &#x3b1;, &#x3b2; and &#x3b3; are mole ratios of Si, Ti and O, respectively, and the ratio of &#x3b1;/&#x3b2; ranges from 0.45 to 7.25 and the ratio of &#x3b3;/(&#x3b1;+&#x3b2;) ranges from 0.80 to 1.70.

Sputtering target, method for producing same, sputtering thin film formed by using such sputtering target, and organic EL device using such thin film

A water electrolysis apparatus includes a plurality of unit cells. A membrane electrode assembly of the unit cell includes an anode side power feeding element and a cathode side power feeding element stacked on an anode catalyst layer and a cathode catalyst layer on both surfaces of a solid polymer electrolyte membrane. A surface of the anode side power feeding element is subjected to a grinding process, and then, subjected to an etching process to form a smooth surface.

Electrolysis apparatus, electrochemical reaction membrane apparatus, porous electrical conductor, and production method thereof

A sintered object of silicon monoxide for use as a material for forming silicon oxide thin films is provided of which the evaporation residue as determined by subjecting a sample thereof to thermogravimetry at a heating temperature of 1,300&#xb0; C. and in a vacuum atmosphere, namely at a pressure of not higher than 10 Pa, is not more than 4% by mass relative to the sample before measurement. This sintered object can be produced by sintering SiO particles having a particle diameter of not smaller than 250 &#x3bc;m, either after press forming thereof or during press forming thereof, in a non-oxygen atmosphere. This sintered object is high in evaporation rate and, when it is used as a material for film formation, an improvement in productivity in producing silicon oxide thin films can be expected. Thus, it can be widely applied in forming silicon oxide thin films useful as electric insulating films, mechanical protection films, optical films, barrier films of food packaging materials, etc.

Sintered object of silicon monoxide and method for producing the same

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Kobe, Japan

Kazuomi Azuma