Fujitsu Corporation

Kabushiki Kaisha Kobe Seiko Sho

Kobelco Research Institute, Inc.

Kazuo Yoshikawa

Shizuo Andoh

Hisashi Yamaguchi

Katsutoshi Takagi

Eiji Iwamura

Seigo Yamamoto

Takashi Onishi

Seiji Nishi

Takashi Oonishi

Tomokatsu Kishi

Tsutae Shinoda

Toru Asano

Seigou Yamamoto

Kenji Awamoto

Toyoshi Kawada

Akira Otsuka

Koichi Sakita

Tadatsugu Hirose

Shigeki Kameyama

Keizo Kurahashi

Yoshinori Miyashita

Yasunobu Hashimoto

Junichi Nakai

Shigetoshi Tomio

Hideaki Takizawa

Yasushi Yoneda

Kazuhisa Fujisawa

Masayuki Wakitani

Hiroshi Yaguchi

Kyoji Kariya

Kunio Takayama

Kenichi Oki

Yoshimasa Awata

Sei Sato

Shoshin Miura

Hiromi Matsumura

Hiroyuki Uchida

Yoshitake Matsushima

Eisuke Kusumoto

Takashi Miyamoto

Akinori Uratsuka

Michihiro Shimizu

Kurahashi Keizo

Masanori Anan

Provided is a resin-coated saw wire that, when used to cut a workpiece, has a shallow depth of a damaged layer and can give a cut article having a smooth surface. The resin-coated saw wire is used in cutting of the workpiece using a sawing machine and includes a steel wire and a resin coating covering the steel wire surface. The resin coating contains substantially no abrasive grain, has a hardness at 120&#xb0; C. of 0.07 GPa or more, and has a hardness controlled so as to prevent abrasive grains from coming into the resin coating, which abrasive grains are sprayed during workpiece cutting.

Resin-coated saw wire and cut article

Disclosed is an electrode for semiconductor devices capable of suppressing the generation of hillocks and reducing the resistivity, which is suitable for an active matrixed liquid crystal display and the like in which a thin film transistor is used; its fabrication method; and a sputtering target for forming the electrode film for semiconductor devices. The electrode for semiconductor devices is made of an Al alloy containing the one or more alloying elements selected from Fe, Co, Ni, Ru, Rh and Ir, in a total amount from 0.1 to 10 At %, or one or more alloying elements selected from rare earth elements, in a total amount from 0.05 to 15 at %. The method of fabricating an electrode for semiconductor devices, includes the steps of: depositing an Al alloy film, in which the elements mentioned above are dissolved in an Al matrix, on a substrate; and precipitating part of all of the elements dissolved in the Al matrix as intermetallic compounds by annealing the Al alloy film at an annealing temperature ranging from 150 to 400&#xb0; C.; whereby an electrode for semiconductor devices which is made of an Al alloy film with an electrical resistivity lower than 20 &#x3bc;&#x3a9;cm is obtained. The target is made of an Al alloy containing the above elements.

Electrode and its fabrication method for semiconductor devices, and sputtering target for forming electrode film for semiconductor devices

Disclosed is an electrode for semiconductor devices capable of suppressing the generation of hillocks and reducing the resistivity, which is suitable for an active matrixed liquid crystal display and the like in which a thin film transistor is used; its fabrication method; and a sputtering target for forming the electrode film for semiconductor devices. The electrode for semiconductor devices is made of an Al alloy containing the one or more alloying elements selected from Fe, Co, Ni, Ru, Rh and Ir, in a total amount from 0.1 to 10 At %, or one or more alloying elements selected from rare earth elements, in a total amount from 0.05 to 15 at %. The method of fabricating an electrode for semiconductor devices, includes the steps of: depositing an Al alloy film, in which the elements mentioned above are dissolved in an Al matrix, on a substrate; and precipitating part of all of the elements dissolved in the Al matrix as intermetallic compounds by annealing the Al alloy film at an annealing temperature ranging from 150&#xb0; to 400&#xb0; C.; whereby an electrode for semiconductor devices which is made of an Al alloy film with an electrical resistivity lower than 20 &#x3bc;&#x3a9;cm is obtained. The target is made of an Al alloy containing the above elements. REEXAMINATION RESULTS The questions raised in reexamination proceedings Nos. 90/007,822 and 90/007,883, filed Nov. 28, 2005 and Nov. 28, 2005 respectively, have been considered, and the results thereof are reflected in this reissue patent which constitutes the reexamination certificate required by 35 U.S.C. 307 as provided in 37 CFR 1.570(e) forreexaminations, and/or the reexamination certificate required by 35 U.S.C. 316 as provided in 37 CFR 1.997(e) forreexaminations.

Aluminum alloy electrode for semiconductor devices

A method and device for driving a display panel are provided in which power consumption due to interelectrode capacitance in the addressing period is reduced with less number of components in a driving circuit. Four switches are provided for each of plural data electrodes. The four switches control open and close of a current path p from a bias potential line to the data electrode A, a current path p from a capacitor to the data electrode A, a current path p from the data electrode A to the capacitor and a current path p from the data electrode A to the ground potential line

Method and device for driving a display panel

An active matrix type liquid crystal display, in which the reliability is enhanced by preventing the short-circuit and insulation breakdown of a gate insulating portion and the delay time of a gate bus line is shortened by reducing the resistivity of an interconnect film. The liquid crystal display of this type is manufactured by the steps of forming an interconnect/electrode film on a substrate by physical deposition; patterning the interconnect/electrode film; and anodic-oxidizing part or all of the interconnect/electrode film. In this method, the interconnect/electrode film is formed of an Al alloy containing at least one kind selected from a group consisting Fe, Co and rare earth elements in an amount of 0.1 to 10 at %; and the thickness of the anodic oxidation film is specified to be in the range of 200 &angst; or more.

Method of manufacturing active matrix type liquid crystal display

A plasma display panel that can enlarge the voltage margin and can realize a stable display is provided. The plasma display panel includes first and second display electrodes X, Y for generating surface discharge and address electrodes A that cross the display electrodes via a dielectric layer. In the preparation process of the addressing for forming charge distribution corresponding to display contents, charge forming and charge adjusting are performed. The charge forming generates wall voltage having the same polarity at the same kind of interelectrode of all cells constituting the screen, for three kinds of interelectrodes, an interelectrode XY between the display electrodes, an interelectrode XA between the first display electrode and the address electrode, and an interelectrode YA between the second display electrode and the address electrode. The charge adjusting decreases the wall voltage by applying an increasing voltage that increases continuously or step by step.

Method for driving a plasma display panel

An Al alloy film containing one kind or two or more kinds of alloy components selected from a group of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and Mn in a total amount of 0.1 to 10 at %, and a melting Al alloy sputtering target for depositing the Al alloy film, wherein the above-mentioned film is used as a reflection film for an optical recording medium, a shading film for a liquid crystal display panel or for a solid image pickup device, and an Al alloy thin film line or electrode material for a semiconductor device.

A1 alloy films and melting A1 alloy sputtering targets for depositing A1 alloy films

Disclosed is an electrode for semiconductor devices capable of suppressing the generation of hillocks and reducing the resistivity, which is suitable for an active matrixed liquid crystal display and the like in which a thin film transistor is used; its fabrication method; and a sputtering target for forming the electrode film for semiconductor devices. The electrode for semiconductor devices is made of an Al alloy containing the one or more alloying elements selected from Fe, Co, Ni, Ru, Rh and Ir, in a total amount from 0.1 to 10 At %, or one or more alloying elements selected from rare earth elements, in a total amount from 0.05 to 15 at %. The method of fabricating an electrode for semiconductor devices, includes the steps of: depositing an Al alloy film, in which the elements mentioned above are dissolved in an Al matrix, on a substrate; and precipitating part of all of the elements dissolved in the Al matrix as intermetallic compounds by annealing the Al alloy film at an annealing temperature ranging from 150 to 400.degree. C.; whereby an electrode for semiconductor devices which is made of an Al alloy film with an electrical resistivity lower than 20 .mu..OMEGA.cm is obtained. The target is made of an Al alloy containing the above elements.

Electrode and its fabrication method for semiconductor devices, and

A1 alloy films and melting A1 alloy sputtering targets for depositing A1

A triple-electrode planar display capable of achieving further power saving has been disclosed. A drive unit is dedicated to a planar display having a display panel in which cells being arranged in the form of a matrix and having a memory function and discharge glow function are formed, in which one of each pair of electrodes on the same substrate which are responsible for discharge glow is a common electrode connected in common. The drive unit includes a common electrode drive circuit for applying an alternating voltage to the common electrode, and a power save circuit that when the common electrode is changed from a high potential to a low potential, restores and accumulates power applied to the common electrode, and that when the common electrode is changed from the high potential to the low potential, applies accumulated power to the common electrode. The power save circuit includes a restoration channel that includes a capacitive element and inductance element and that restores power, and an application channel that includes an inductance element and that applies accumulated power to the common electrode.

Drive unit for planar display

Disclosed is magnetic recording media having a high coercivity sufficient to cope with the recent high density recording, low noise property and excellent squareness, and a target for forming a magnetic film useful for realizing the magnetic recording media. The magnetic film is made of a Co based alloy containing: Cr in an amount of 8-18 atomic %; one kind or more of elements selected from a group consisting of V, Mo and W in an amount of 3-10 atomic %, or one kind or more of the elements and Ta in an amount of 3-10 atomic %; Pt in an amount of 0.5 to 20 atomic % or Ni in an amount of 5-30 atomic %, as needed; and the balance being Co and inevitable impurities, wherein the total content of Cr and one kind or more of the elements selected from a group consisting of V, Mo and W, or of Cr and one kind or more of the elements and Ta is specified to be 24 atomic % or less. A target for forming the magnetic film is formed by melting, casting and hot-rolling the Co alloy having the above composition, and it has a maximum permeability of 100 or less.

Magnetic recording medium having a metal underlayer and a CoCr alloy

A flat panel display has a low withstand voltage and performs high speed line sequential scanning and recovers power. An AC type panel display has electrodes arranged in a matrix form, a push-pull type driver circuit, having first and second transistors, provided for each pair of plural pairs, of power supply lines connected to a driver circuit for driving a plurality of display electrodes to be scanned and a power supply which supplies a defined voltage to one of the respective power supply lines of each pair connected to the corresponding driver circuit, and a leakage control switch which leaks the defined voltage applied to the power supply line.

Driver for flat display panel

Disclosed is an electrode for semiconductor devices capable of suppressing the generation of hillocks and reducing the resistivity, which is suitable for an active matrixed liquid crystal display and the like in which a thin film transistor is used; its fabrication method; and a sputtering target for forming the electrode film for semiconductor devices. The electrode for semiconductor devices is made of an Al alloy containing the one or more alloying elements selected from Fe, Co, Ni, Ru, Rh and Ir, in a total amount from 0.1 to 10 At %, or one or more alloying elements selected from rare earth elements, in a total amount from 0.05 to 15 at %. The method of fabricating an electrode for semiconductor devices, includes the steps of: depositing an Al alloy film, in which the elements mentioned above are dissolved in an Al matrix, on a substrate; and precipitating part of all of the elements dissolved in the Al matrix as intermetallic compounds by annealing the Al alloy film at an annealing temperature ranging from 150.degree. to 400.degree. C.; whereby an electrode for semiconductor devices which is made of an Al alloy film with an electrical resistivity lower than 20 .mu..OMEGA.cm is obtained. The target is made of an Al alloy containing the above elements.

Disclosed is a method of lowering the permeability of a difficult-to-work Co alloy by introducing high working strain. It includes the steps of: making a Co alloy by melting, the Co alloy containing 0.1 to 40 atomic % of Ni and/or 0.1 to 40 atomic % of Pt, and 0.5 to 10 atomic % of one or more kinds of elements selected from a group consisting of Ta, Mo, W, V, Nb, Hf, Zr, Ti and B (the upper limit of B: 5 atomic %), the balance being 50 atomic % or more of Co and inevitable impurities; preparing a sheet like ingot having a thickness of 30 mm or less using the Co alloy; and covering the surface of the ingot with a metal capsule or coating it with a glass lubricant, and hot-rolling the treated ingot in such a manner that the reduction is performed in two stages accompanied by re-heating and the whole reduction is 30% or more.

Method of lowering permeability of difficult-to-work Co alloy

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Kobe, Japan

Kazuo Yoshikawa