Semiconductor Energy Laboratory Co., Ltd.

Kazuo Urata

Shunpei Yamazaki

Naoki Hirose

Shigenori Hayashi

Itaru Koyama

Mamoru Tashiro

Noriya Ishida

Shinji Imatou

Mari Sasaki

Mitsunori Tsuchiya

Shinji Imato

Kouhei Wada

Yuji Tanamura

Takashi Inujima

Shunepi Yamazaki

Kenji Itoh

Kazuhisa Nakashita

Seiichi Odaka

An electronic device comprising a substrate having a frame, a metal lead and an electronic parts in a bonding structure, and a molding of an organic resin formed on the substrate, wherein the surface of the organic resin is provided with a hardened water-resistant or carbonaceous film or wherein pores at the surface of the organic resin are filled within an inactive gas such as argon because of a plasma treatment of the resin surface with the inactive gas whereby impurities are prevented from entering into the organic resin through the pores.

Electronic device and its manufacturing method

Electronic device including a densified region

An improved electric device and manufacturing method for the same are described. The device is for example an IC chip clothed with moulding. In advance of the moulding process, the rear surface of lead frame of the IC chip is cleaned and coated with an antioxidation film made of silicon nitride in order to avoid the oxidation of the lead frame. The antioxidation film ensures the connection of the moulding and the lead frame and protect the IC chip from moisture invaded through cracks or gaps. The coating of silicon nitride is carried out after cleaning the lead frame.

Electric device utilizing antioxidation film between base pad for

An electronic device comprising a substrate having a frame, a metal lead and electronic parts in a bonding structure, and a molding of an organic resin formed on the substrate, wherein the surface of the organic resin is provided with a hardened water-resistant or carbonaceous film.

Plasma processing method for improving a package of a semiconductor

An improved electric device and a manufacturing method for the same is described. The device is for example an IC chip clothed with molding. The IC chip is mounted on a lead frame by means of an adhesive such as a glass-type silver paste which discharges little amount of gases and the rear surface of the lead frame is covered with an antioxidation film of silicon nitride.

Electric device having a leadframe covered with an antioxidation film

An improved electric device and manufacturing method for the same are described. The device is, for example, an IC chip clothed with moulding. In advance of the moulding process, the IC chip is coated with silicon nitride in order to protect the IC chip from moisture invaded through cracks or gaps. The coating of silicon nitride is carried out after cleaning the surface of the IC chip by plasma CVD.

Method of manufacturing a semiconductor using plasma processing

Thin film formation method

A mercury-vapor lamp is provided with a reservoir in which a superfluous amount of mercury is stored in the form of liquid state. The liquid mercury in the reservoir is cooled to a certain temperature. The pressure of mercury-vapor is automatically reduced to the saturated pressure of the liquid mercury cooled. In this configuration, the pressure of mercury-vapor is controlled by adjusting the temperature of the liquid mercury stored in the reservoir.

Gas discharge lamp having temperature controlled, liquid reservoir for

Ultraviolet light is emitted mainly with 185 nm in wave length so that a thick silicon layer is fabricated by decomposition of silane gas at a high deposition speed. As a light source, a bulb is filled with an amount of mercury gas without dosing argon gas which enhances preferentially light with 254 nm in wave length.

Ultraviolet light emitting device and application thereof

A thin film manufacturing system comprises a reaction vessel with a window that is transparent to ultraviolet radiation; a means of exhausting gas from the reaction vessel to a reduced pressure condition, a means of introducing a gas into the reaction vessel to form a thin film, a source of ultraviolet radiation that activates the gas, and slits provided at a predetermined interval on the window that is transparent to ultraviolet radiation.

Thin film manufacturing system

A photo CVD apparatus includes a reaction chamber, a vacuum pump, and a light source chamber disposed in the reaction chamber, the light source chamber having a light window. A light source is provided in the light source chamber for irradiating the inside of the reaction chamber through the window. A device inputs reactive gas into the reaction chamber, and an electrode is disposed in the reaction space adjacent to the window and located between the substrate and the window. A method of depositing a layer on a substrate includes the steps of disposing a substrate in a reaction chamber, introducing a reactive gas, and initiating a photo-chemical reaction to deposit the product of the reaction on the substrate by irradiating the reactive gas with light emitted from a light source through a window of a light source chamber in which the light source is disposed. The substrate is then removed from the reaction chamber, and an etchant gas is introduced into the reaction chamber. A voltage is then applied between the substrate holder and an electrode which is located between the window and the substrate holder for carrying out plasma etching of the window.

Method and apparatus for forming a layer

A photo CVD apparatus for use with a reactive gas is disclosed, which includes a reaction chamber, a second chamber for a light source, separated from the reaction chamber by a transparent window. There is also a conduit connecting these two chambers and a means for preventing deposition by the reactive gas on the light source chamber walls, such as heating, is provided. Examples of this technique's applicabilities are given with such gases as Si.sub.2 H.sub.6 or Al(CH.sub.3).sub.3 and ammonia.

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Atsugi, Japan

Kazuo Urata