Shin-etsu Handotai Co., Ltd.

Bridgestone Corporation

Nanoteco Corporation

Other

Bridgestone Sports Co., Ltd.

Semiconductor Technology Academic Research Center

National Institute of Advanced Industrial Science and Technology

Mitsui Engineering and Shipbuilding Company Limited

Kazuo Uchida

Shinji Nozaki

Hiroshi Morisaki

Nobuhiko Noto

Masato Yamada

Wataru Ban

Atsushi Komatsu

Akiyoshi Shimizu

Kazunori Hagimoto

Hitoshi Ikeda

Masahisa Endo

Jun-ya Ishizaki

Masanobu Takahashi

Hajime Kanda

Shunichi Ikeda

Kingo Suzuki

Chishiro Tanabe

Hiroyuki Ueda

Akihiro Hasegawa

Taro Kawamura

Yoshitaka Yamamoto

Susumu Tanaka

Osamu Takano

Yasuhiro Nakanishi

An aerodynamic characteristic estimation device is provided with a detection section to detect at least one of a velocity of a bicycle or an acceleration of the bicycle when being pedaled by a cyclist, a detection section to detect a pedaling power when being pedaled, and an estimation section to estimate aerodynamic drag information indicating an aerodynamic characteristic acting on the bicycle being ridden by the cyclist based on a computation result of mechanical analysis according to an equation of motion established for a direction of progress of the bicycle and using the velocity of the bicycle and the acceleration of the bicycle as obtained from a detection result together with the pedaling power as detected by the detection section.

Aerodynamic characteristic estimation device, aerodynamic characteristic estimation method and program

A contact state observation apparatus of golf ball can observe the contact phenomenon between a golf ball and a golf club which has been conventionally hidden and unobservable. The contact state observation apparatus of golf ball includes: launching means for launching a golf ball; an impact platewith which the launched golf ballimpacts; and imaging means, provided opposite to the launching means across the impact plate, for shooting an image of the contact state between the golf balland the impact plateat the time of impact of the golf ball. The impact platehas, in a part where the golf ballimpacts, an observation holewhose area is smaller than a contact area with the golf ball, and the imaging meansshoots the image of the contact state through the observation hole

Contact state observation apparatus of golf ball and contact state observation method of golf ball

A light-emitting devicehas ITO transparent electrode layersused for applying drive voltage for light-emission to a light-emitting layer section, and is designed so as to extract light from the light-emitting layer sectionthrough the ITO transparent electrode layers. The light-emitting devicealso has contact layers composed of In-containing GaAs, formed between the light-emitting layer sectionand the ITO transparent electrode layers, so as to contact with the ITO transparent electrode layers respectively. The contact layersare formed by annealing a stackobtained by forming GaAs layerson the light-emitting layer section, and by forming the ITO transparent electrode layersso as to contact with the GaAs layersto thereby allow In to diffuse from the ITO transparent electrode layersinto the GaAs layersThis provides a method of fabricating a light-emitting device, in which the ITO transparent electrode layers as the light-emission drive electrodes are bonded as being underlain by the contact layers, to thereby reduce contact resistance of these electrodes, and to thereby make the contact layers less susceptible to difference in the lattice constants with those of the light-emitting layer section during the formation thereof.

Method of fabricating light-emitting device and light-emitting device

In a light-emitting device, a light-emitting layer portion composed of a compound semiconductor is bonded on one main surface of a transparent conductive semiconductor substrate while placing a substrate-bonding conductive oxide layer composed of a conductive oxide in between. Between the light-emitting layer portion and the substrate-bonding conductive oxide layer, a contact layer for reducing junction resistance with the substrate-bonding conductive oxide layer so as to contact with the substrate-bonding conductive oxide layer. This is successful in providing the light-emitting device which is producible at low costs, has a low series resistance, and can attain a sufficient emission efficiency despite it has a thick current-spreading layer.

Light-emitting device and method of fabricating the same

A light emitting device having an oxide transparent electrode layer as an emission drive electrode, and designed so that damage possibly occurs during bonding of electrode wires to the bonding pads is less influential to a light emitting layer portion is disclosed. The light emitting device has the light emitting layer portion composed of a compound semiconductor and has a double heterostructure in which a first-conductivity-type cladding layer, an active layer and a second-conductivity-type cladding layer are stacked in this order; and the light emitting layer portion is applied with emission drive voltage through an oxide transparent electrode layer formed so as to cover the main surface of the second-conductivity-type cladding layer. A bonding pad composed of a metal is disposed on the oxide transparent electrode layer, and to the bonding pad an electrode wire for current supply is bonded. Between the second-conductivity cladding layer and the oxide transparent electrode layer, a cushion layer composed of a compound semiconductor having a dopant concentration lower than that of the second-conductivity-type cladding layer is disposed.

Light emitting device and method of fabricating the same

While a crucible containing an Si material and a substrate to be processed are set in a chamber, Ar gas is supplied into the chamber and the Si material is evaporated by heating, thereby forming a nanoparticle thin film of Si on the substrate. This substrate is then annealed in an oxygen atmosphere to oxidize Si, forming a nanoparticle oxide thin film consisting of SiO.

Method of fabricating a semiconductor device having a nanoparticle porous oxide film

A light emitting devicehas a structure in which a p type InGaAs layeras an electrode contact layer and an ITO electrode layeras an oxide transparent electrode layer are formed in the order in a first major surfaceside of a light emitting layer section. In a second major surfaceside of the light emitting layer section, an n type InGaAs layeras an electrode contact layer and an ITO electrode layeras an oxide transparent electrode layer are formed in the order. The ITO electrode layersandtogether with the p type InGaAs layerand the n type InGaAs layerare formed on the respective both major surfacesandof the light emitting layer sectionso as to cover the respective both major surfacesandin the entirety thereof.

Light emitting device

Tread portion of an automobile tire

The light-emitting device has an ITO electrode layer for applying drive voltage for light emission to a light emitting layer section , where the light from the light emitting layer section is extracted as being passed through the ITO electrode layer . Between the light emitting layer section and the ITO electrode layer , an electrode contact layer composed of In-containing GaAs is located so as to contact with such ITO electrode layer , where occupied areas and unoccupied areas for the electrode contact layer are arranged in a mixed manner on the contact interface with the transparent electrode layer . The electrode contact layer can be obtained by annealing a stack , which comprises a GaAs layer &Prime; formed on the light emitting layer section and the ITO electrode layer formed so as to contact with the GaAs layer &Prime;, to thereby allow In to diffuse from the ITO electrode layer to the GaAs layer

Light-emitting device and method for manufacturing the same

Growing community of inventors

Tokyo, Japan

Kazuo Uchida