Tokyo Electron Limited

Nec Corporation

Tokyo Electron Tohoku Limited

Kazuo Terada

Takahiro Kitano

Takayuki Toshima

Tetsuo Fukuoka

Kenichi Yamaga

Wataru Ohkase

Kazuo Sakamoto

Takeshi Uehara

Kazuyuki Honda

Katsuo Nishi

Disclosed is a supercritical processing apparatus which can suppress the occurrence of pattern collapse, improve the throughput, and prolong a maintenance interval. In the disclosed supercritical processing apparatus to remove a liquid remained on a substrate by a super-critical state processing fluid, a heating unit heats the processing fluid to place the processing fluid into a processing receptacle in a supercritical state, and a cooling mechanism forcibly cools an area capable of transferring the heat to the substrate from the heating unit in order to suppress the liquid from being evaporated from the substrate until the substrate is disposed on a seating unit.

Supercritical processing apparatus, substrate processing system and supercritical processing method

A heating device has a heating chamber. An initial temperature distribution is created in a surface of a substrate (wafer W) when the substrate is carried into the heating chamber. . . Temperature distribution creating means (heating lamps) creates a preheating temperature distribution in the substrate supported on a cooling plateat a waiting position before the substrate is carried into the heating chamberso as to level out the initial temperature distribution.

Heating device, coating and developing system, heating method and storage medium

Disclosed is a substrate carrying apparatus having a simple configuration capable of inhibiting the occurrence of pattern collapse. A carrying tray of the disclosed substrate carrying apparatus includes a bottom plate for supporting the substrate and a circumferential side wall being provided around the bottom plate. An opening is formed in the bottom plate. An elevating member, to and from which the substrate is to be transferred, passes through the opening. A space is temporarily formed in a carrying tray. The elevating member within the opening passes to the outside of the carrying tray through the space. When the substrate is carried, the liquid is reservoired within the carrying tray, and the substrate is carried while the liquid remained on the upper surface of the substrate.

Substrate carrying apparatus having circumferential sidewall and substrate processing system

Provided are a substrate processing apparatus and a substrate processing method capable of processing of a substrate using a supercritical fluid without exposing the pattern formed on the substrate to an atmospheric environment. The substrate processing apparatus includes a cleaning bath configured to accommodate a substrate and clean the substrate by flowing a cleaning solution, and a processing vessel configured to accommodate the cleaning bath and process the substrate with a supercritical fluid.

Substrate processing apparatus and substrate processing method

A disclosed heating apparatus includes a heating chamber configured to heat a substrate placed in the heating chamber with a heat plate opposing the substrate; a gas stream forming portion that creates a gas stream along a top surface of the substrate in the heating chamber; and a pair of first plate members respectively located between an inner side wall of the heating chamber and a first substrate edge opposing the inner side wall, and between another inner side wall of the heating chamber and a second substrate edge opposing the other inner side wall.

Heating apparatus and heating method

A substrate treatment apparatus of the present invention includes: a holding means for rotatably holding a substrate to be treated; a coating solution supply nozzle for supplying a coating solution onto the front surface of the substrate to be treated held on the holding means; a treatment container with an upper surface open for housing them; an exhaust means for exhausting an atmosphere in the treatment container from the bottom; a multiblade centrifugal fan provided on the inner periphery of the treatment container for flowing airflow on a front surface side of the substrate to the exhaust means; and a controller for controlling the number of rotations of the multiblade centrifugal fan corresponding to the number of rotations of the substrate, wherein the number of rotations of the multiblade centrifugal fan is controlled so that turbulent airflow flowing in a circumferential direction on the front surface of the substrate generated due to the rotation of the substrate is corrected to laminar airflow flowing in a radial direction.

Substrate treatment apparatus

In a heat treatment device including a heating chamber having a heating plate heating a semiconductor wafer, a cooling plate cooling the wafer heated by the heating chamber, and a transporting device transporting the wafer into and from the heating chamber, the cooling plate is provided with a coolant passage, a plurality of projections carrying the wafer with a space between the wafer and the surface of the cooling plate, and suction holes neighboring to the respective projections and connected to a suction device.

Heat treatment device

Disclosed are an improved semiconductor memory cell suitable for high integration and a novel method of fabricating the same. The memory cell has a large capacitance and a small area. The memory cell also has a plurality of bit-lines buried in an isolation region in a semiconductor substrate. The bit-line has a very small width and thickness thereby reducing a parasitic capacity between the bit-line and the semiconductor substrate. The memory cell may further be provided with a noise shielding line. Further, disclosed is a novel memory cell array of a semiconductor memory. The buried bit-line is coupled with a bit-line connecting sub-arrays and both are separated by a insulation film. A plurality of pairs of the bit-lines are arranged in rows. A word-line is coupled with a sub-word line and both are separated by a insulation film. A plurality of pairs of the word-lines are arranged in columns. The memory cells are arranged at the intersections of the buried bit-lines and the word-lines. The memory cells are also alternatively arranged on the adjacent buried bit-lines so that the number of the memory cells arranged on one of the buried bit-lines are reduced.

Method of forming a semiconductor memory device

Semiconductor memory and method of fabricating the same

A temperature control method in a rapid heat treatment apparatus comprising simulatively heating dummy wafers in a process tube and previously detecting and grasping by temperature sensors a wafer temperature rising pattern, a heater temperature rising pattern and an internal atmosphere temperature rising pattern, arranging wafers to be processed in the process tube, detecting a temperature of each zone and that of each heater element by the temperature sensors, upon heating the wafers, and controlling each heater element on the basis of the detected temperatures and the wafer, heater and internal atmosphere temperature rising patterns by a controller to rapidly and uniformly raise the temperature of each wafer until the temperature of the wafers in each zone reaches the intended one and becomes stable.

Method and apparatus for controlling temperature in rapid heat treatment

A system for supporting and rotating substrates in a process chamber comprising a first exhaust vacuum pump for exhausting the process chamber, a shaft vertically extending into the process chamber to support wafers in it, bearings for supporting the shaft rotatable, a mechanism for rotating the shaft together with the wafers, a bearing casing for covering the bearings and communicated with the process chamber, a second exhaust vacuum pump for exhausting the bearing casing, and a controller for controlling the first and second exhaust vacuum pumps in such a way that the bearing casing is exhausted by the second exhaust vacuum pump before the process chamber is exhausted by the first exhaust vacuum pump.

Growing community of inventors

Koshi, Japan

Kazuo Terada