Kabushiki Kaisha Toshiba

Kazuo Tawarayama

Tetsuro Nakasugi

Tatsuhiko Higashiki

Hiroyuki Mizuno

Shunko Magoshi

Takumi Ota

Takeshi Koshiba

Takuya Kouno

Noriaki Sasaki

An extreme ultraviolet light source apparatus includes a main body including a supply section to which an extreme ultraviolet radiation seed is supplied, and an emission part configured to emit extreme ultraviolet, an excitation unit provided in the main body and configured to generate a plasma by exciting the extreme ultraviolet radiation seed, an optical condensing unit provided in the main body and configured to converge extreme ultraviolet, which is radiated from the plasma, at the emission part, a trap provided between the excitation unit and the optical condensing unit, a first positioning mechanism connected to the trap and configured to adjust at least one of a position and an angle of the trap, and a measuring unit configured to measure a far field distribution image of the plasma on the basis of the extreme ultraviolet which is emitted from the emission part, thereby to operate the first positioning mechanism.

Extreme ultraviolet light source apparatus and method of adjusting the same

According to an aspect of the present invention, there is provided a method of monitoring a focus position on a surface of a wafer for an exposure apparatus which transfers by exposure a pattern formed on a mask onto the wafer, including tilting at least one of the mask and an exposure area on the wafer and performing exposure while the mask and the exposure area have a relative angle, to form two spurious resolution images of the pattern of the mask in the exposure area; measuring positions of the two spurious resolution images formed in the exposure area and detecting an optimal focus position of the exposure apparatus on the basis of a middle point between the measured positions of the two spurious resolution images.

Focus monitoring method

According to an aspect of the invention, there is provided an electron beam drawing apparatus comprising at least one stage of a deflection amplifier and a deflection unit, a first storage section which stores shot information at a drawing time, a second storage section which stores a correction table indicating a relation between the shot information and an output voltage of the deflection amplifier, and an adjusting section which adjusts an output of the deflection amplifier based on the correction table stored in the second storage section and the shot information stored in the first storage section.

Electron beam drawing apparatus, deflection amplifier, deflection control device, electron beam drawing method, method of manufacturing semiconductor device, and electron beam drawing program

An exposure method forms, in a shot area on a reticle, marks to measure arrangement errors that may occur between adjacent device patterns, transfers the marks from the reticle onto a wafer through exposure and development processes using an exposure system, measures arrangement errors according to the marks on the wafer, calculates four error components from the measured arrangement errors, and corrects the exposure system according to the calculated error components. This method eliminates superposition errors from the next exposure process, thereby effectively using the shot areas of exposure systems.

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Tsukuba, Japan

Kazuo Tawarayama