Hitachi, Ltd.

Furukawa-sky Aluminum Corporation

The Furukawa Electric Co., Ltd.

Kazuo Taguchi

Kenichi Onisawa

Takahiro Nakayama

Yoshio Abe

Katsumi Tamura

Akira Sato

Kenichi Hashimoto

Moriaki Fuyama

Toshio Ohta

Masanobu Hanazono

Kensuke Mori

Yoshimasa A Ono

An extruded material of a free-cutting aluminum alloy excellent in embrittlement resistance at a high temperature, containing from 3 to 6% by mass of Cu and from 0.9 to 3% by mass of Bi with the balance being Aluminum and inevitable impurities, wherein a temperature for reducing the Charpy impact test value to half of the value at room temperature is 180&#xb0; C. or more.

Extruded material of a free-cutting aluminum alloy excellent in embrittlement resistance at a high temperature

Disclosed are aluminum alloy hollow materials and processes for producing the same wherein an aluminum alloy hollow material is produced by subjecting an ingot of an aluminum alloy containing 0.3&#x2dc;1.5 wt % Mn to port hole extrusion or port hole extrusion and drawing-elongation processing and wherein a difference in electric conductivity between individual portions in lengthwise direction of the hollow material is not more than 1.0 IACS %. According to the aluminum alloy hollow materials, preferential corrosion in welding potions in port hole extrusion can be prevented.

Aluminum alloy hollow material, aluminum alloy extruded pipe material for air conditioner piping and process for producing the same

An electroluminescent device including dielectric films each of which consists of first regions made of a material with a strong self-healing type dielectric breakdown characteristic, second regions made of a material with a strong propagating type dielectric breakdown characteristic, and mixed regions consisting of a mixture of these two materials, the first and second regions being arranged alternately in the film thickness direction with the mixed regions therebetween, the mixing ratio of these two materials in the mixed regions changing in such a manner that the ratio of one material gradually decreases from a region of this material toward the adjacent region of the other material, that is, the ratio of the other material increases. Thus, the changes in the mixing ratio of these two materials of the dielectric films in the film thickness direction are continuous and periodic. These dielectric films, with a high breakdown field strength, make it possible to obtain an electroluminescent device having a large drive voltage margin and providing a luminescence of high brightness.

Electroluminescent device

A thin film electroluminescent (EL) device includes a pair of opposing electrodes formed on a substrate of a transparent electrical insulator, and an EL layer formed between the electrodes and covered at both surfaces with insulating layers respectively. Strontium sulfide is used as a host material of the EL layer, and its crystals tend strongly to have a (200) orientation, so that the resistance to free transit of electrons participating in emission of luminescence is substantially eliminated to ensure a higher brightness.

Thin film electroluminescent device

A thin film electroluminescent (EL) device comprises a pair of opposing electrodes formed on a substrate of a transparent electrical insulator, and an EL layer formed between the electrodes and covered at both surfaces with insulating layers respectively. Strontium sulfide is used as a host material of the EL layer, and its crystals tend strongly to have a (200) orientation, so that the resistance to free transit of electrons participating in emission of luminescence is substantially eliminated to ensure a higher brightness.

In an electroluminescence element including light emitting layers emitting light by applying AC voltages thereto the light emitting layer consists of a light emitting layer emitting red light and a light emitting layer emitting bluish green light and a blue filter transmitting blue light and a green filter transmitting green light are disposed on the light emitting surface side of the bluish green light emitting layer. In this way it is possible to take out red, blue and green lights at an approximately equal brightness level and to realize full color.

Electroluminescence device

An electroluminescent device comprising an electroluminescent layer capable of emitting light under application of AC voltage, the electroluminescent layer comprising strontium sulfide as a matrix and containing at least one of halides and sulfides of cerium, europium, thulium, terbium and samarium, and having a lattice constant of not more than 6.04 .ANG. and a half-width value at the (111) face of not more than 0.21 degree has a higher brightness than an electroluminescent device having an electroluminescent layer comprising ZnS as a matrix.

Electroluminescent device and process for producing the same

A thin film EL element which comprises an insulating substrate, a transparent electrode, a first insulating layer, a light-emitting layer, a second insulating layer and a back side electrode, successively laid one upon another, at least one of the first and second insulating layers being composed of a material having a perovskite crystal structure, for example, a layer of SrTiO.sub.3, PbTiO.sub.3 or BaTiO.sub.3, particularly a SrTiO.sub.3. The material having the perovskite crystal structure has an increased (111) plane orientation such that the diffraction intensity ratio of (111) plane to (110) plane, I (111)/I (110), is more than 0.5. The material can be a single crystal, having (111) plane orientation. The material is deposited by sputtering, at substrate temperatures of not less than 200.degree. C. and up to the softening point of the insulating substrate, and at a pressure of not more than 1.times.10.sup.-2 Torr. The material has a high dielectric constant, a high dielectric strength and thus has a high reliability of element performance with a low driving voltage.

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Tokyo, Japan

Kazuo Taguchi