Other

Hitachi, Ltd.

Hitachi Engineering Services Co., Ltd.

Hitachi Service Engineering Co., Ltd.

Japan As Represented by Secretary of National Institute of Infectious Diseases

Hitachi Engineering Service

Hitachi Engineering & Services, Inc.

Service Engineering Co. Ltd.

Kazuo Suzuki

Takuya Fukuda

Tadasi Sonobe

Michio Ohue

Satoshi Yamagoe

Hiroshi Ishizuka

Naohiro Momma

Shigeru Takahashi

Yasuhiro Mochizuki

Noboru Suzuki

Takeshi Saito

Kenji Yamamoto

Motoo Futami

Masaya Ichinose

Atsuyoshi Koike

Shigeta Ueda

Shingo Shirakawa

Seizo Nakano

Yasuhiro Kiyofuji

Katsuaki Saito

Junji Sato

Fumiyuki Kanai

Yoichiro Iwakura

Satoru Todoroki

Kiyoshi Chiba

Tooru Yamakawa

Kiyosi Chiba

Masahide Asano

Akira Maekawa

Shunichi Hirose

Satoshi Mizuno

Yoshio Yamakawa

Wayne Dawson

Shinichi Tamon

This invention is an algorithm for estimating the topology of a protein by determination of the free energy from a global entropy evaluation model combined with local correction methods.

Method for predicting the spatial-arrangement topology of an amino acid sequence using free energy combined with secondary structural information

A leukocyte activating protein factor or a substance originating therein having an effect of inhibiting bone resorption; and novel medicinal utilization thereof. Use of these novel substances with the bone resorption inhibitory effect makes it possible to provide therapeutic methods efficacious against hypercalcemia, osteoporosis, etc.

Bone resorption inhibitors

This invention relates to a mouse with deficiency of gene of neutrophil chemotactic factor LECT2 having a function of lacking by deleting a whole or a part LECT2 gene or inserting other gene such as a selective marker gene to any portion of the LECT2 gene or replacing it with another gene(s).

Mouse with deficiency of gene of neutrophil chemotactic factor LECT2

In a lightning protection system for a wind power generation installation, a conductor ring is provided on a wind mill vane and at a rotor casing incorporating a wind power generator a zinc oxide element is provided so as to face the conductor ring with a spark gap , thereby, if a lightning in winter season which causes to flow a large current for a long duration time hits the wind mill vane , the wind power generation installation is effectively protected.

Lightning protection system for wind power generation installation

A power converter system includes: a circuit breaker having one terminal connected to a power system and another terminal connected to a load; a transformer for interconnection; a power converter; and a controller for controlling the power converter, wherein, during a return to grid connected operation, the power converter is controlled such that the phase of an output voltage of the power converter matches the phase of the system voltage, and the circuit breaker is closed, so as to prevent an overcurrent during a changeover from the self commutated operation to the grid connected operation of the power converter.

Phase synchronization system for connecting a power converter to a power distribution system

Human LECT2a polypeptide having amino acid sequence in the order shown in Sequence ID NOs. from 1 to 5, which did not include other proteins/peptides and human LECT2b polypeptide having amino acid sequence in the order shown Sequence ID NO. 6 in which did not include other proteins/peptides, and DNA coding LECT2b sequence.

Leukocyte cell--derived chemotaxin 2b (LECT2b)

In a plasma processing apparatus which forms a gaseous raw material into a plasma by using electron cyclotron resonance and processes a substrate, leading-edge opening portions of an introduction tube into which a gaseous raw material is introduced are formed in the inner wall surface of the container in such a way that they do not project within the vacuum container. A heater is wound around the introduction pipe so that the opening portions thereof can be heated. With this construction, even if a gaseous raw material which is a liquid or solid at normal temperature and normal pressure is made to flow, the gaseous raw material can be prevented from being liquefied or solidified in the opening portions of the introduction pipe, and the opening portions of the introduction pipe can be prevented from being clogged. In addition, since there are no projections within the vacuum container, the propagation of microwaves is not impeded, making it possible to uniformity process the substrate.

Plasma processing apparatus and method of processing substrates by using

A plasma treatment apparatus for forming a thin film on a substrate in a vacuum vessel includes a magnetic field generator which can be positioned inside or outside the vacuum vessel, and a microwave source. The magnetic field strength is controllable such that an electron cyclotron resonance (ECR) area is defined near the substrate. The magnetic field generator can be arranged so that plasma and reactive gas introduction ports are on the microwave introduction side of the ECR area and the substrate is on the opposite side of the ECR area. Alternatively, a gas introduction port can be positioned such that reactive gas is introduced into the ECR area or onto the substrate.

Apparatus for plasma treatment using electron cyclotron resonance

Disclosed are a semiconductor device comprising a semiconductor substrate, a first metal connection layers, a first substrate oxide layer having a specific form, and a second connection pattern layer; a process for producing the device; and a microwave plasma treatment apparatus having gas feed ports in a specific position. The highly reliable semiconductor devices can be produced at a high rate at high yields.

Semiconductor device, process for the production thereof and apparatus

The present invention relates to a microwave plasma processing apparatus for processing such as thin film formation, etching, sputtering, and plasma oxidation, etc., on a surface of a processing object by utilizing a high density plasma generated by electron cyclotron resonance. A vacuum vessel of the apparatus, in which a microwave transmitted by a microwave guide is utilized for converting gas supplied to the vacuum vessel to plasma for the plasma processing of the processing object placed in the vacuum vessel, is formed in, such manner that the interior space of the vacuum vessel extends beyond the outer periphery of magnetic field generating coils, and the extended portion of the vessel is provided with a gas outlet for connection with an evacuation apparatus to evacuate the interior of the vacuum vessel to a desired vacuum degree. Accordingly, preferable evacuating characteristics can be obtained even in a case when a large amount of the reaction gas is supplied to the vacuum vessel in order to process a large size processing object, because the vacuum vessel in which the processing object is placed can be connected with the evacuation apparatus through a space and the same effect as if the evacuation apparatus is directly connected with the vacuum vessel is realized.

Microwave plasma processing apparatus

The present invention relates to a plasma treatment apparatus for making plasma surface processing of a specimen such as thin-film formation, etching, sputtering or plasma oxidation by use of plasma produced through microwave discharge. In a specimen chamber provided with a specimen table for holding at least one specimen thereon, a microwave is introduced from a direction intersecting a magnetic line of force so as to propagate in the longitudinal direction of an ECR region or in a direction along the plane of the ECR region. Since the microwave is introduced from the transverse direction of the specimen chamber, the provision of a microwave introducing window at an upper portion of the specimen chamber is not required and hence a counter electrode for applying an electric field to the specimen can be disposed at the upper portion of the specimen chamber, thereby making it possible to apply a uniform electric field to the specimen so that the specimen is subjected to a uniform treatment.

Microwave-excited plasma processing apparatus

A plasma operation apparatus utilizes plasma generated by a microwave cooperative with a magnetic field as to perform a surface operation on a specimen such as semiconductor substrates, such as, for example, thin film deposition, etching, sputtering and plasma oxidation. The apparatus particularly takes advantage of electron cyclotron resonance and is suitable for performing highly efficient and high-quality plasma operations.

Plasma operation apparatus

An abrasive tool for grinding a combined workpiece of a steel with an ultrahard alloy, comprising a grinding wheel comprising a resinoid binding wheel and synthetic diamond abrasive grits held therein, said grits being characterized by selected combinations of grit size, bulk density and grit strength.

Diamond abrasive grits

A vessel for enclosing fluid, particularly a vessel adapting itself to the expansion and/or contraction of fluid for preventing the occurrence of air-bubbles in the fluid enclosed in the vessel.

Vessel adaptable to the expansion and/or contraction of fluid therein

A process for thermally treating synthetic diamond grains to eliminate magnetism thereof and a diamond grain product obtained by the process, which is suitable for manufacturing electrodeposited diamond tools.

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Hitachi, Japan

Kazuo Suzuki