Fujitsu Corporation

Fujitsu Semiconductor Limited

Fujitsu Microelectronics Limited

Kazuo Sukegawa

Kenichi Watanabe

Toyoji Sawada

Michiari Kawano

Takumi Hasegawa

Hiroshi Namba

Tetsuo Izawa

Shinji Kuzuya

Satoshi Otsuka

Tomoyuki Yamada

Junichi Mitani

Tetsuo Yoshimura

Masayuki Nakada

Yoshikazu Arisaka

Ryota Nanjo

Tsutomu Tatematsu

Kengi Togashi

A method of manufacturing a semiconductor device including an integrated circuit part in which an integrated circuit is formed and a main wall part including metal films surrounding said integrated circuit part, includes the step of selectively forming a sub-wall part including metal films between the integrated circuit part and the main wall part, in parallel to formation of the integrated circuit part and the main wall part. A sub-wall part which is in an 'L' shape is provided between each corner of the main wall part and the integrated circuit part of the resulting semiconductor device.

Semiconductor device, method of manufacturing the same, and phase shift mask

A main wall part is provided so as to surround an integrated circuit part. A sub-wall part which is in 'L' shape is provided between each corner of the main wall part and the integrated circuit part. Therefore, even if the stress is concentrated due to heat treatment or the like, the stress is dispersed to the main wall part and the sub-wall part, and hence peeling between layers and a crack are unlikely to occur, as compared with the conventional art. Further, even if the crack and the like occur at the corner, moisture from the outside hardly reaches the integrated circuit part when the main wall part and the sub-wall part are coupled to each other. For this reason, it is possible to ensure an extremely high moisture resistance.

A semiconductor device formed on a SOI substrate includes isolation trenches formed in a first region and reaching an insulation layer buried in the SOI substrate, and alignment marks formed in a second region and consisting of grooves extending into a support substrate.

Semiconductor device and fabrication process thereof

A semiconductor device has: a semiconductor substrate having a principal surface; a fuse circuit formed above the principal surface, the fuse circuit having fuse elements each having a predetermined breaking point; a first trench isolation region formed in a surface layer of the semiconductor substrate under the fuse circuit; and a plurality of active region dummies formed through the first trench isolation region in an area excepting a predetermined area around the predetermined breaking point. Although a dummy structure is formed also in a fuse circuit, a breaking margin is prevented from being lowered and a substrate damage is avoided, while surface flatness and line width controllability are ensured.

Semiconductor device with fuses

A high-strength protective member made of tungsten is disposed under a disconnecting point of a fuse. This protective member is formed simultaneously with formation of a via contact portion which connects the fuse with wiring, for example.

Semiconductor device provided with fuse and method of disconnecting fuse

Growing community of inventors

Kawasaki, Japan

Kazuo Sukegawa