Dai-ichi Kogyo Seiyaku Co., Ltd.

Rohm Co., Ltd.

Kazuo Sato

Hiromi Uenoyama

Yasuyuki Ohnishi

Sumio Goto

Masahiro Komori

Michio Nakagawa

Kazunori Torii

Takeshi Doi

Akio Watanabe

Tamotu Hamamura

Naofumi Saiuchi

Tadayuki Sugimoto

Nobuji Inoue

A semiconductor storage device includes: a plurality of memory array cells (hereinafter, referred to as cells); a circuit arranged in each of the cells for precharge of each bit line of the cells to a predetermined voltage; and a circuit for comparing, for each bit line, an output voltage of each bit line of the cells selected for reading out data to an output voltage of each bit line of cells selected for reference. When the data is read out, the voltage value for precharge of the bit line of the cells selected for reading out data and the voltage value for precharge of the bit line of the cells selected for reference are temporarily set to different values. Thus, all the output bits of the cells selected for reading out data can be read out by a single read out operation.

Semiconductor storage device

A semiconductor device is equipped with a step-up circuit having a series of multiple charge pump units. Each of the units has a well separation type MOS transistor. The separation well of the transistor is coupled to a high potential so as to form double reverse biases between the N-type well and a P-type substrate and between the N-type well and a P-type well. This permits the threshold Vth of the MOS transistor to be held at low level. The units are provided with a clock whose current supply capability is limited until a predetermined condition (that a predetermined period of time has elapsed after the onset of the step-up circuit by a startup signal or that the output voltage has reached a predetermined level). This limitation of the clock facilitates suppression of power consumption by the step-up circuit during a startup, thereby reducing changes in amplitude of a supply voltage.

Semiconductor device equipped with a voltage step-up circuit

A conventional semiconductor integrated circuit device suffers from the increasing difficulty in definitely setting the output state of a redundancy circuit as the number of conductor layers increases. To overcome this inconvenience, according to the present invention, a semiconductor integrated circuit device has a first semiconductor chip having a nonvolatile memory for storing redundancy information, and has a second semiconductor chip having a conversion circuit for converting the redundancy information output in the form of serial data from the nonvolatile memory into parallel data and a redundancy circuit of which the output state is definitely set by receiving the parallel data output from the conversion circuit.

Semiconductor integrated circuit device

A semiconductor integrated circuit device includes a semiconductor chip having a long side and a short side. The semiconductor chip includes a memory cell area occupying approximately 80 percent of the area of the semiconductor chip and an input and output circuit area provided at an end portion of the semiconductor chip along the short side. Pads and two types of MOS transistors are arranged in an efficient manner to reduce the area of the input and output circuit area. Specifically, a plurality of pads are arranged along the short side in the input and output circuit area and the MOS transistors each constituting a group together with the pad are arranged in an area on the inside of the pads within the chip.

Radiation-curable polyurethane emulsion compositions that can be diluted with water are disclosed. An emulsion of a polyurethane having active amino groups is prepared, and the emulsion is reacted, in the presence of water, with an isocyanate compound having a polymerizable unsaturated group to introduce the polymerizable unsaturated group into the polyurethane. The introduction of a polymerizable unsaturated group into the polyurethane is accomplished in the presence of water, thereby overcoming prior art problems of polymerization and gelation during the preparation of the emulsion. The present invention provides radiation-curable polyurethane emulsion compositions that can be produced on an industrial scale.

Radiation-curable polyurethane emulsion compositions

Synthetic or semi-synthetic fiber textile materials are coated with an aqueous solution or dispersion of a thermally reactive saccharide-urethane composition. The saccharide/urethane composition consists of a saccharide/polyisocyanate adduct having at least one blocked isocyanate group, a saccharide/urethane ether having at least one blocked isocyanate group, or mixture of a saccharide material and a thermally reactive crosslinker thereof.

Surface-treatment of synthetic or semi-synthetic fiber textile materials

There is provided a method of finishing a cellulosic fiber-containing textile product with a resin bath based on a water-soluble urethane prepolymer. This treatment provides for improvements in dry and wet creased crease resistance and wash-and-wear properties of cellulosic fiber-containing textile products.

Resin treatment of cellulosic fiber-containing textile products

Synthetic fiber-containing fabrics are post-treated by impregnating the fabrics with an aqueous solution or dispersion of a thermally reactive blocked isocyanate group-containing polysaccharide derivative and then baking the impregnated fabrics. The blocked isocyanate group-containing polysaccharide derivative is produced by reacting a hydroxy-alkylated natural polysaccharide with a polyisocyanate compound to form a urethane polymer having at least one free isocyanate group, and then blocking the free isocyanate group with a blocking agent. The hydroxyalkylate natural polysaccharide may be directly reacted with a polyisocyanate compound having at least one blocked isocyanate group.

Post-treatment of synthetic fiber fabrics

A thermally reactive water-soluble urethane prepolymer having a plurality of masked isocyanate groups capable of regenerating free isocyanate groups at an elevated temperature, said urethane prepolymer having the formula: ##STR1## wherein A is an organic bridging group having a valency from 3 to 5,

Thermally reactive water-soluble blocked urethane prepolymer

An aqueous emulsion of a thermally reactive polyurethane composition comprising a blocked polyisocyanate component having at least two masked isocyanate groups in the molecule uniformly dispersed in an aqueous medium, and a reactive anionic surface active agent of the formula:

Growing community of inventors

Kyoto, Japan

Kazuo Sato