Other

Nec Corporation

Anelva Corporation

Hideki Matsumra

Kazuo Sakurai

Yasunobu Nashimoto

Yosuke Miyoshi

Hideki Matsumura

Atsushi Masuda

Akira Izumi

Shuji Nomura

Shouichi Aoshima

Keiji Tanaka

Shinya Nakamura

Akira Takenaka

Yasuro Ohishi

Motoshi Hayashi

Kiyoshi Fukatsu

Hiroyuki Imamura

This invention discloses a method and apparatus where a pre-treatment which reduce interfacial level density is carried out before thin film deposition on a substrate utilizing a catalytic gas phase reaction. The catalytic gas phase reaction is generated with a treatment gas which is supplied with the substrate via a thermal catalysis body provided near the substrate surface. Thin film deposition on the substrate surface is carried out after this pre-treatment. The thermal catalysis body is made of tungsten, molybdenum, tantalum, titanium or vanadium, and is heated by a heater. And, this invention also discloses a semiconductor device having a semiconductor-insulator junction with its interfacial level density is 10 eV cm or less, which is brought by the above pre-treatment in the insulator film deposition process.

Method and apparatus for depositing a thin film, and semiconductor device having a semiconductor-insulator junction

An improved scroll compressor comprises a fixed scroll and an orbiting scroll, as well as an Oldham's coupling which enables the orbiting scroll to have a orbital movement. The Oldham's ring of the Oldham's coupling is so formed that its sliding surfaces for counterpart members to slide thereon are formed by a base material containing silicon particles, while the surface of each silicon particle (remaining on the base material's surface serving as a slidable surface for counterpart members to slide thereon) is formed into a flat surface. In practice, a ratio of silicon portions formed into flat surfaces to an entire sliding area of the Oldham's coupling is in a range of 3% to 20%, preferably 5% to 15%. With the use of the scroll compressor of the present invention, it is possible to improve the wear resistance of the Oldham's ring of the Oldham's coupling and its counterpart members in the scroll compressor.

Scroll compressor having an Oldham's ring containing silicon particles

This invention discloses a method and apparatus where a pre-treatment which reduce interfacial level density is carried out before thin film deposition on a substrate utilizing a catalytic gas phase reaction. The catalytic gas phase reaction is generated with a treatment gas which is supplied with the substrate via a thermal catalysis body provided near the substrate surface. Thin film deposition on the substrate surface is carried out after this pre-treatment. The thermal catalysis body is made of tungsten, molybdenum, tantalum, titanium or vanadium, and is heated by a heater. And, this invention also discloses a semiconductor device having a semiconductor-insulator junction with its interfacial level density is 10.sup.12 eV .sup.-1 cm.sup.-2 or less, which is brought by the above pre-treatment in the insulator film deposition process.

Method for depositing a thin film

Growing community of inventors

Fuchu, Japan

Kazuo Sakurai