Renesas Electronics Corporation

Renesas Technology Corp.

Adv Antest Corporation

Riso Kagaku Corporation

Hoya Corporation

Nippon Electric Co., Ltd.

Nippon Columbia Co., Ltd.

Ono Sangyo Co., Ltd.

Kazuo Sakamoto

Naozumi Morino

Kazuo Tanaka

Takahiro Hayashi

Shunsuke Toyoshima

Ikuo Kudo

Hiroyasu Ishizuka

Hiroshi H Eguchi

Noboru Hayama

Eiichi Yada

Toshio Tanaka

Yoshiharu Ohinata

Toshiaki Ito

Satoru Komata

Reikou Fukazaki

Mitsuo Chikano

Takeshi Hayasaka

Taiko Uno

Hisashi Inamura

According to one embodiment, a semiconductor device includes a shallow P-well, a shallow N-well, a shallow P-well, and a shallow N-well formed in regions different from one another, a deep N-well formed in a part deeper than the shallow P-well and the shallow N-well, and a base material, and further includes a first transistor formed in a part of the shallow P-well and the shallow N-well on the side of the principal surface, and a second transistor formed in a part of the shallow P-well and the shallow N-well on the side of the principal surface, in which the shallow N-well is formed in such a way as to surround the peripheral edge of the region of the shallow P-well.

Semiconductor device and method of manufacturing the same

The present invention has for its purpose to provide a technique capable of reducing planar dimension of the semiconductor device. An input/output circuit is formed over the semiconductor substrate, a grounding wiring and a power supply wiring pass over the input/output circuit, and a conductive layer for a bonding pad is formed thereover. The input/output circuit is formed of MISFET elements in the nMISFET forming region and the pMISFET forming region, resistance elements in the resistance element forming regions and diode elements in the diode element forming regions functioning as protective elements. A wiring connected to the protective elements and positioned under the grounding wiring and the power supply wiring is pulled out in a pulling-out region between the nMISFET forming region and the pMISFET forming region and between the grounding wiring and the power supply wiring to be connected to the conductive layer.

Semiconductor device

A semiconductor integrated circuit device comprises I/O cells arranged around a core region. Each of the I/O cells comprises a level shifter circuit, an I/O logic circuit, and an I/O buffer circuit. An I/O logic region in which the I/O logic circuit is arranged and an I/O buffer region in which the I/O buffer circuit is arranged overlap with a region in which a pad for the I/O cell is arranged. The I/O logic region and the I/O buffer region are arranged side by side in a direction parallel to a side of the core region.

Semiconductor integrated circuit device

Semiconductor device with output circuit and pad arrangements

Semiconductor devices with output circuit and pad

Semiconductor device with output circuit and pad

A microcomputer is provided having a memory card interface capable of correctly latching data even when a card such as an MMC card is connected thereto. In the microcomputer having an interface with an external device such as a memory card, the interface unit is provided with an output driver connected to an external terminal for outputting a clock signal to output the clock signal and with an equivalent load circuit capable of imparting, to the clock signal extracted from an arbitrary position in a stage previous to the output driver in a clock signal path, delay equivalent to delay resulting from an external load connected to the external terminal in order to generate a clock signal for latching data inputted from the memory card.

Data processing device and mobile device

Semiconductor device with output circuit arrangement

While steam is supplied to flow channels to heat inner cavity surfaces to a temperature equal to or higher than the heat distortion temperature of a molding resin, the resin mixed with a supercritical fluid is injected from an injection molding machine into a mold cavity. When the injection of a predetermined quantity of the resin is completed, the supply of the steam to the flow channels is stopped, and cooling water starts to be supplied to the flow channels. The inner cavity surfaces are thus quickly switched from a heated state to a cooled state, cooling and solidifying the resin into a molded product of good appearance which is free of broken cell marks on its surface.

Method of manufacturing molded product of foamed resin and apparatus for molding foamed resin

Growing community of inventors

Tokyo, Japan

Kazuo Sakamoto