Agency of Industrial Science and Technology

Ministry of International Trade & Industry

Agency of Industrial Science and Technology Ministry of International

Kazuo Saitoh

Michihide Machida

Hideyo Tabata

Takeo Iga

Shinji Tomura

Setsuo Nakao

Shyoichi Kume

Soji Miyagawa

Hiroaki Niwa

Yoshitaka Kuwahara

A self-supporting thin film of silicon single crystal is produced essentially by the steps of implanting boron ions in a silicon single crystal substrate from one major surface thereof to form a high impurity concentration layer having a high boron concentration in the substrate; heating the silicon single crystal substrate formed with the high impurity concentration layer in an atmosphere containing oxygen to form an oxide film on the surface of the single crystal substrate and make the high impurity concentration layer resistant to etching; masking all of the oxide film surface other than that at the center region on the surface opposite from that implanted with boron ions and then exposing the high impurity concentration layer by high-speed mask etching followed by selective etching; and removing the oxide film.

Method of producing self-supporting thin film of silicon single crystal

A high-strength sintered article of chemical substances having the .beta.-silicon nitride type crystal structure is produced by blending 50 to 99.9 weight percent of a .beta.-silicon nitride and/or .beta.'-Sialon and 50 to 0.1 weight percent of a mixture, as a sintering aid, consisting of BeO, Ga.sub.2 O.sub.3, and Al.sub.2 O.sub.3 in respective amounts such as to have a Ga.sub.2 O.sub.3 /BeO ratio in the range of from 2.8 to 9.4, an Al.sub.2 O.sub.3 /BeO ratio in the range of from 0.0 to 2.6, and an Al.sub.2 O.sub.3 /Ga.sub.2 O.sub.3 ratio in the range of from 0.0 to 1.1, all ratios being ratios by weight and sintering the resultant blend.

Method for manufacture of high-strength sintered article of substances

Growing community of inventors

Nagoya, Japan

Kazuo Saitoh