Hitachi, Ltd.

Renesas Technology Corp.

Hitachi Ulsi Systems Co., Ltd.

Hitachi Ulsi Engineering Corp.

Kazuo Nojiri

Yoshinao Kawasaki

Yoshiaki Sato

Masayuki Kojima

Hironobu Kawahara

Ryooji Fukuyama

Yoshimi Torii

Takashi Yunogami

Takashi Yamada

Kazuyuki Suko

Michimasa Hunabashi

Keizo Kuroiwa

Hiromichi Enami

Hideo Aoki

Takayuki Oshima

Nobuyoshi Kobayashi

Shinichi Fukada

Shoji Hotta

Yutaka Kobayashi

Hiroyuki Uchiyama

Yoshitaka Tadaki

Hisashi Nakamura

Atsuyoshi Koike

Toshihiro Sekiguchi

Jun Murata

Takafumi Tokunaga

Osamu Kasahara

Hiroyuki Miyazawa

Atsushi Ogishima

Sukeyoshi Tsunekawa

Hiroko Kaneko

Michimasa Funabashi

Toshio Maeda

Masaki Nagao

Yasuo Kiguchi

Kazuya Kadota

Tadashi Chikahara

Masato Sadaoka

Keizo Suzuki

Seiichi Watanabe

Shuntaro Machida

Masahiko Hiratani

Tetsunori Kaji

Yuichi Matsui

Yoshifumi Ogawa

Yuzuru Ohji

Kazuyuki Tsunokuni

Yutaka Kakehi

Kazutami Tago

Atsushi Maekawa

Shouochi Uno

Shigeru Ohno

Yoshitaka Nakamura

Masaru Izawa

Tatehito Usui

Kazue Takahashi

Hiroshi Akiyama

Tetsuo Ono

Motohiko Yoshigai

Hiroshi Kawakami

Hiroshi Hasegawa

Hiroyuki Kitsunai

Masato Ikegawa

Keiji Okamoto

Nobuo Tsumaki

Miwako Nakahara

Toshiyuki Arai

Tomonori Saeki

Tadashi Umezawa

Nobuyuki Mise

Hirohisa Usuami

Shigeru Kakuta

Kunihiko Katou

In a process for the manufacture of a semiconductor integrated circuit device having an inlaid interconnect structure by embedding a conductor film in a recess, such as a trench or hole, formed in an organic insulating film which constitutes an interlevel dielectric film and includes an organosiloxane as a main component, the recess, such as a trench or hole, is formed by subjecting the organic insulating film to plasma dry etching in a CF-based gas/N/Ar gas in order to suppress the formation of an abnormal shape on the bottom of the recess, upon formation of a photoresist film over the organic insulating film, followed by formation of the recess therein with the photoresist film as an etching mask.

Method of manufacture of semiconductor integrated circuit device and semiconductor integrated circuit device

Method of manufacture of semiconductor integrated circuit

Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.

Method and apparatus for processing samples

Insulating films through (of which insulating films are silicon nitride films and insulating films are silicon oxide films) are sequentially formed on the wires of the fourth wiring layer and groove pattern is transferred into the insulating film by means of photolithography. An anti-reflection film is formed to fill the grooves of the insulating film and then a resist film carrying a hole pattern is formed. The films are subjected to an etching operation in the presence of the resist film to transfer the hole pattern into the insulating films and part of the insulating film . Subsequently, the resist film and the anti-reflection film are removed and the groove pattern and the hole pattern are transferred respectively into the insulating film and the insulating film by using the insulating film as mask.

Semiconductor device and method of manufacturing the same

Apparatus for processing samples

Ion current density measuring method and instrument, and semiconductor device manufacturing method

With a view to providing a technique for highly-selective etching of Ru (ruthenium) using a photoresist as an etching mask, an Ru-film, which is an lower electrode material deposited on the side walls and bottom surface of a hole, is covered with a photoresist film, followed by isotropic dry etching in a gas atmosphere containing an ozone gas, whereby a portion of the Ru film outside of the hole is removed.

Manufacturing method of semiconductor integrated circuit device

Insulating films through (of which insulating films are silicon nitride films and insulating films are silicon oxide films) are sequentially formed on the wires of the fourth wiring layer and groove pattern is transferred into the insulating film by means of photolithography. An anti-reflection film is formed to fill the grooves of the insulating film and then a resist film carrying a hole pattern is formed. The films are subjected to an etching operation in the presence of the resist film to transfer the hole pattern into the insulating films and part of the insulating film Subsequently, the resist film and the anti-reflection film are removed and the groove pattern and the hole pattern are transferred respectively into the insulating film and the insulating film by using the insulating film as mask.

Method of manufacturing a semiconductor device

Described is a manufacturing method of an integrated circuit which uses a thin film such as platinum or BST as a hard mask upon patterning ruthenium or the like, thereby making it possible to form a device without removing the hard mask. In addition, the invention method makes it possible to interpose a protecting film such as platinum in order to prevent, upon removing a resist used for the patterning of the hard mask, an underlying ruthenium film or the like from being damaged.

Method of manufacturing a semiconductor integrated circuit

Fine etching of ruthenium or ruthenium oxide is suited for a ferroelectric and high dielectric film such as BST. Over a silicon oxide film and a plug a titanium nitride film ruthenium film ruthenium dioxide film and silicon oxide film are stacked successively. After patterning the silicon oxide film with a resist film, the resist film is removed. In the presence of the patterned silicon oxide film the ruthenium dioxide film and ruthenium film are etched under processing pressure of 15 mTorr, plasma source power of 500 W, RF bias power of 200 W, oxygen flow of 715 sccm, chlorine flow of 80 sccm, total flow of about 800 sccm, gas residence time of 49.3 msec, and over etching of 100%.

Process for fabricating an integrated circuit device having a capacitor with an electrode formed at a high aspect ratio

Growing community of inventors

Higashimurayama, Japan

Kazuo Nojiri