Kokusai Electric Corporation

Hitachi-Kokusai Electric Inc.

Kazuo Nakaya

Osamu Morita

Kaori Inoshima

Hiroyuki Mitsui

Susumu Nishiura

Hiroshi Ekko

Hiroki Okamiya

There is provided a technique that includes: an exhaust line including a second pressure regulation valve; a bypass line including a first pressure regulation valve; and a pressure control controller configured to control the first pressure regulation valve and the second pressure regulation valve, and configured to: adjust an opening degree of the first pressure regulation valve to reduce a pressure in a process chamber from an atmospheric pressure to a second predetermined pressure; adjust the opening degree of the first pressure regulation valve to maintain the second predetermined pressure; adjust the opening degree of the first pressure regulation valve to reduce the pressure to a first predetermined pressure; detect the pressure; adjust an opening degree of the second pressure regulation valve to reduce the pressure to a third predetermined pressure; and adjust the opening degree of the second pressure regulation valve to maintain a processing pressure.

Substrate processing apparatus, method of manufacturing semiconductor device, and non-transitory computer-readable recording medium storing program

A controller that processes a substrate by executing a process recipe for supplying at least a source gas to a process chamber to form a film on the substrate, and a pressure controller that controls the degree of opening of a pressure control valve on the basis of a pressure value detected by a pressure sensor that detects a pressure in a furnace during execution of the recipe and maintains the process chamber to a predetermined pressure. The pressure controller includes a memory that accumulates data acquired from the pressure sensor and pressure control valve, and measures a valve full close time to full close of the pressure control valve during execution of the process recipe and holds the valve full close time in the memory, and the controller acquires the stored valve full close time and confirms whether the acquired valve full close time falls within a threshold range.

Substrate processing apparatus and control system

Provided is a method of automatically setting, in a recipe, a process parameter (PP) according to the number of substrates to be processed. The method includes (a) displaying a process parameter of a process recipe on a display unit; (b) displaying a parameter name in a process parameter file on the display unit; (c) generating a first recipe by substituting the process parameter with the parameter name; (d) downloading the first recipe and one of a plurality of condition tables corresponding to the selected number of substrates when the number of substrates to be processed in a processing chamber is selected; and (e) generating a second recipe by substituting the process parameter of the downloaded one of the condition tables for the parameter name in the downloaded first recipe.

Substrate processing apparatus, method of manufacturing semiconductor device, and method of generating recipe

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Toyama, Japan

Kazuo Nakaya