Mitsubishi Denki Kabushiki Kaisha

Kazuo Mizuguchi

Haruhiko Abe

Yoji Mashiko

Sotoju Asai

Sumio Nomoto

Takashi Murakami

Norio Hayafuji

Hirotaka Kizuki

Masao Nagatomo

Hiroshi Harada

Yuji Ohkura

Shigeki Kageyama

Kotaro Mitsui

Seiji Ochi

Akihiro Takami

Mari Tsugami

Manabu Katoh

Hirozo Takano

Zenpei Kawazu

In a method for fabricating an infrared detector, initially, a CdHgTe layer of a first conductivity type is produced on a front surface of a semiconductor substrate, a plurality of spaced apart CdHgTe regions of a second conductivity type, opposite the first conductivity type, are produced at the surface of the first conductivity type CdHgTe layer, and part of the surface of the first conductivity type CdHgTe layer between the second conductivity type CdHgTe regions is selectively irradiated with a charged particle beam to evaporate Hg atoms from that part, whereby a CdHgTe separation region of the first conductivity type and having a Cd composition larger than that of the first conductivity type CdHgTe layer is produced penetrating through the first conductivity type CdHgTe layer and surrounding each of the second conductivity type CdHgTe regions. Therefore, a highly-integrated high-resolution infrared detector with no crosstalk between pixels is achieved.

Infrared detector having active regions and isolating regions formed of

A semiconductor laser producing visible light includes a first conductivity type GaAs substrate, a first conductivity type (Al.sub.w Ga.sub.1-w).sub.0.5 In.sub.0.5 P cladding layer disposed on the substrate, a (Al.sub.z Ga.sub.1-z).sub.0.5 In.sub.0.5 P active layer disposed on the first conductivity type cladding layer wherein 0.ltoreq.z&lt;w, a second conductivity type (Al.sub.w Ga.sub.1-w).sub.0.5 In.sub.0.5 P cladding layer having a lattice constant and disposed on the active layer, a first conductivity type In.sub.1-x Ga.sub.x As.sub.1-y P.sub.y current blocking layer disposed on part of the second conductivity type cladding layer wherein y is approximately equal to -2x+2, 0.5.ltoreq.x&lt;1, and 0&lt;y.ltoreq.1 so that the lattice constant of the current blocking layer is substantially the same as the lattice constant of the second conductivity type cladding layer, a current concentration and collection structure in contact with the second conductivity type cladding layer for concentrating current flow in a central part of the active layer, and first and second electrodes disposed in contact with the substrate and current concentration and collection structure, respectively.

Semiconductor laser producing visible light

Ions of a metal which becomes passive under the presence of oxygen with regard to plasma etching are implanted into selected portions of the surface of a workpiece, after which the workpiece is subjected to plasma etching with a reaction gas mixed with oxygen, whereby that layer which has been rendered passive acts as a mask, and an etched pattern is formed.

Method for forming patterns by plasma etching

A dry etching device is provided in which on at least one portion of the path of etchant movement from the plasma production region to the etching workpiece a resin coating containing atoms or molecules of the same type as the chemically active atoms or molecules which constitute the etchant, is formed.

Dry etching device

A thin aluminum film 3 is formed on the top surface of a substrate 2, 1. Selected areas of the aluminum film are irradiated by an oxygen ion beam 6 to form implanted regions 7. The surface is then plasma etched, with the oxygen ion implanted regions serving as a mask to thereby prevent the removal of the underlying areas of the aluminum film.

Method for forming a fine pattern of an aluminum film

Growing community of inventors

Amagasaki, Japan

Kazuo Mizuguchi