Hitachi, Ltd.

Sumco Corporation

Kazuo Mera

Hiroyuki Tomita

Isao Hashimoto

Takayoshi Seki

Yasuo Yamashita

Kensuke Amemiya

Katsumi Tokiguchi

Keiji Arimatsu

Minoru Suzuki

Minoru Fujimoto

Mikio Hongo

Akira Bando

Kaoru Katayama

Tateoki Miyauchi

Seiichi Nakamura

Hideki Nishihata

Nobuo Tsumaki

Shigeo Shiono

Tomoji Watanabe

Kiyoshi Okumura

Yasunori Nakano

Shigenobu Maruyama

Koyo Morita

Hiroo Ohkawa

Riyuusuke Kasamatsu

Kouji Ishiguro

Katsurou Mizukoshi

Haruhisa Sakamoto

Kazunori Tsubuku

Kazuhiko Nishimura

Tsuneo Hayashi

Yoichi Kurosawa

This apparatus for manufacturing semiconductor substrates has support disks and holding units holding semiconductor substrates on the support disks. The holding unit has a stopper which is formed of a conductive material and holds the brim of the semiconductor substrate, a stopper holder which supports the stopper at the outer circumferential portion thereof, a retaining member which retains the stopper to the support disk, and a heating unit which heats the stopper.

Apparatus for manufacturing semiconductor substrates

Heat energy produced for heating is absorbed into a silicon wafer, and the thermal deformation of the silicon wafer is prevented. An ion implanting apparatus comprises an ion source for producing an ion beam; a process chamber for containing the silicon wafer; a rotating body disposed and rotated in the process chamber; a holding means for holding the silicon wafer of an object to be ion-implanted with a spacing between an ion implanted area of the object to be ion-implanted and the holding means, the holding means being connected to the rotating body; and a heating means for heating the silicon wafer in the process chamber, wherein the holding means holds the silicon wafer in a state in contact with a part of a region in an outer peripheral side of the silicon wafer, and blocks the silicon wafer to move toward an acting direction of a centrifugal force.

Ion implanting apparatus and sample processing apparatus

A wafer holder for holding a wafer includes a wafer holder base, a wafer fixing part, holder pins, a bearing, a housing, and a coil spring. The wafer fixing part is fixed to an outer circumference of a wafer holder. The holder pins are arranged to face the wafer fixing part. The holder pin is rotatably supported by the bearing. The holder pins are movably supported along the diameter direction of the wafer holder base by the coil spring. In the process of holding a side of the wafer with the holder pins, when force from the wafer works on the holder pins, the holder pins are rotated with a Z axis as a center, thus reducing frictional force between the holder pin and the wafer. Accordingly, it is possible to prevent particle generation from holding an implanting object.

Ion implanter

An ion implanter comprises an ion source and a wafer support device having a rotary disk that supports a plurality of wafers thereon and is rotated about its center axis, and capable of being swung alternately in opposite directions. An ion beam emitted by the ion source is projected on the wafers for ion implantation. The wafer support device is supported so that the center of gravity of the wafer support device lies below an axis about which the wafer support device is swung alternately in opposite directions and a component of the gravitational acceleration imparted to the wafer support device acts in the same direction as a force applied to the wafer support device to reverse the same.

Ion implantation system and ion implantation method

In an ion implanter, in order to direct an ion beam from an ion generation source toward a silicon wafer to implant ions into the wafer, a filament as an electron source is heated to emit electrons and then electrons are converted to an electron beam. At this time, a magnetic field is applied from a magnetic circuit to both of the electron beam and a tungsten ion beam of tungsten ions emitted therefrom together with electrons to deflect the both beams depending on their masses and to separate the both beams into the electron beam and tungsten ion beam, tungsten ions in the tungsten ion beam are trapped by a silicon plate to irradiate only the electron beam onto the silicon wafer and to neutralize the silicon wafer to be charged.

An ion implanting apparatus is capable of preventing occurrence of discharge flaws on a reverse side surface of a silicon wafer when the silicon wafer is ion-implanted at a temperature exceeding 300.degree. C. The ion implanting apparatus has an ion current of 10 mA to 100 mA, and an electron beam generating apparatus for irradiating an electron beam onto the reverse side surface of the silicon wafer. The electron beam is controlled so that current flowing between the wafer and the rotating disk supporting the wafer becomes substantially zero.

Ion implanting apparatus capable of preventing discharge flaw production

In order to implant an ion beam on wafers with low contamination, especially in a large capacity ion implanter for implanting for a long time, a rotating holder 1 shaped like a cylinder or a circular cone is provided, and the wafers 2 are arranged inside of the rotating holder 1 so as to be fixed firmly by a centrifugal force acting on the wafers. Thereby, the wafers are implanted with low contamination, because the periphery of the wafer is not supported by any stopper which may otherwise be sputtered and cause contamination.

Ion implanter for implanting ion on wafer with low contamination

An ion injection device is provided which permits ion injection into a wafer with an optimum ion beam injection angle, and the ion injection device is characterized, by the provision of a wafer holding means for holding a wafer into which ion beam taken out from an ion source is implanted; a relative position varying means for varying the relative position between the wafer holding means and the ion beam within a plane substantially perpendicular to the direction of the ion beam; and an incidence angle varying means for varying an incidence angle of the ion beam on the surface of the wafer held on the wafer holding means. More specifically, the wafer holding means is a rotatable disk which holds a plurality of wafers on the circumference thereof, and the relative position varying means is constituted by a rotating means which causes the rotatable disk to rotate in a plane substantially perpendicular to the direction of the ion beam and by a rocking means for rocking the rotatable disk in a plane substantially perpendicular to the direction of the ion beam.

Ion injection device and method therefor

A laser machining apparatus includes a laser beam source, such as of excimer laser, which produces a laser beam to be projected on a work piece or a sample, first and second illumination light sources which have wavelengths substantially equal to the wavelength of the laser beam and illuminate the entire image and the laser beam, respectively, a first beam splitter which guides the image produced by the illumination light to an observation unit, a second beam splitter which guides the laser beam from the laser beam source to an objective lens, and a controller which controls the machining condition including the relative positioning between the sample and the laser beam depending on the result of observation. The laser beam guide path structure from the laser beam source to the sample has its interior wall made of laser-transparent material such as glass, and the transparent material is enclosed by a laser blocking material such as a metal or water.

Laser machining apparatus and method of the same

A laser marking system of the present invention is provided with an irradiation position changing device on a laser beam path for changing the irradiation positions of the laser beam corresponding to each marking area when a marking area including a plurality of irradiation marking areas is formed by irradiating the workpiece with the pulse laser beam which has passed a pattern of a mask. The plurality of irradiation marking areas are successively irradiated with the pulse laser beam from an irradiation position to form a marking area. Since the marking area larger than each irradiation marking area can be obtained, the whole laser marking system can be made smaller in size without increasing the output power of the pulse laser generator.

Laser marking system

In an optical path adjusting system, an x-axis wedge prism and a y-axis wedge prism are disposed in opposition to each other on the incident optical path side of a condenser lens to which a laser beam is incident so that the x-axis wedge prism and the y-axis wedge prism are displaceable in the directions of x and y axes of a surface of a work respectivley. A position of irradiation of the laser beam on the condenser lens is detected by a detector and the detected position of irradiation is inputted to a controller. The controller supplies a driver with an error correction signal representing an error of the position of irradiation relative to a reference position. The x-axis wedge prism and the y-axis wedge prism are dispalced by the driver so that the laser beam is corrected to be parallel to an optical axis of the condenser lens.

Optical path adjusting system with dual-axis wedge prisms

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Hitachi, Japan

Kazuo Mera