Fujitsu Corporation

Mitsubishi Denki Kabushiki Kaisha

Ricoh Company, Ltd.

Mitsubishi Electric Corporation

Mitsumi Electric Company Ltd.

Nippon Telegraph and Telephone Public Corporation

Sony Corporation

Nec Corporation

Nikon Corporation

Oki Electric Industry Co., Ltd.

Renesas Technology Corp.

Toppan Printing Co., Ltd.

Sankyo Company, Limited

Ishikawajima-harima Heavy Industries Co., Ltd.

Ito En, Ltd.

Kazuo Kobayashi

Takeshi Nakayama

Yasushi Terada

Masashige Sato

Hideyuki Kikuchi

Koji Sakamoto

Hitoshi Kishi

Mitsuru Otagiri

Yoshikazu Miyawaki

Masanori Hayashikoshi

Yasuhiro Kitade

Atsushi Tanaka

Yoichiro Tarui

Makoto Yamamoto

Fuchio Kanno

Hiroshi Ashida

Shinjiro Umehara

Yoshihiro Hayashi

Ikki Tatsukami

Toshio Kaneko

Hitoshi Kanai

Kaigo Tanaka

Kenji Noguchi

Mitsuo Tanaka

Wataru Tanaka

Wataru Yasuda

Osamu Majima

Fuchio Takeda

Minoru Kumagai

Yuko Miyake

Seizi Hattori

Shigetomo Sawada

Hideaki Yuki

Kiyohiro Yuki

Takehiko Nakagawa

Koichi Makino

Wakatake Matsuda

Hiromu Koyauchi

Sinji Tsuyuki

Yutaka Suzuki

Akira Suzuki

Toshihiko Tanaka

Toshio Takahashi

Atsushi Ohba

Kazunori Yamanaka

Masahide Harada

Hiromi Ogiyama

Taku Ogura

Manabu Mochizuki

Hiroshi Ohnishi

Ryoichi Mukai

Yuji Uehara

Hisamatsu Nakano

Motoharu Tanaka

Yutaka Hirata

Norihiko Inaba

Kouji Suzuki

Yasunari Hino

Yasuhiro Shin

Katsunori Kato

Masashi Sakai

Hideshi Tamaru

Takao Ochiai

Hiroyuki Matsushiro

Kazuaki Kurihara

Yoshiko Kubo

Takahiro Onodera

Nobuyoshi Iwata

Mitsuo Nagano

Seiichi Mimura

Toshikazu Tanioka

Atsuhiro Fujii

Michiaki Kanamine

Kazuaki Tagawa

Kiyoshi Tanaka

Takami Kakuda

Takanobu Takihara

Kenji Yoshimi

Tatsuya Senga

Takayuki Kurokawa

Atsushi Saitoh

Yoshihide Kai

Koichi Sekiya

Junichi Sakai

Masao Kozuka

Yasuhiko Horie

Yoshinori Adachi

Ayumu Nozawa

Yoshio Hayashide

Hidemi Nakajima

Iwao Sakane

Sohichi Kuwahara

Kazuaki Kobayashi

Satoru Ide

Tetsuo Kurihara

Yoichiro Kuroda

Kazuyo Muramoto

Ikuo Misao

Sigekazu Enoki

Provided are a silicon carbide epitaxial growth device capable of fostering epitaxial growth on a silicon carbide substrate. Mounting a wafer holder loaded with a silicon carbide substrate and a tantalum carbide member to a turntable in a susceptor, and supplying a growth gas, a doping gas, and a carrier gas into the susceptor by heating by induction heating coils placed around the susceptor, thereby epitaxial growth is fostered, and stable and proper device characteristics are obtained, moreover, the yield in a manufacturing step of the silicon carbide epitaxial wafer is significantly improved.

Silicon carbide epitaxial growth device and method of manufacturing silicon carbide epitaxial wafer

When a gate insulating film is formed on a silicon carbide substrate, the silicon carbide substrate is first oxidized with an oxidation reactant gas to form the gate insulating film on the surface of the silicon carbide substrate. The silicon carbide substrate on which the gate insulating film has been formed is nitrided with a nitriding reactant gas. The oxidation and the nitriding are performed continuously in the same diffusion furnace while a temperature of 1200&#xb0; C. to 1300&#xb0; C. inclusive is maintained.

Method for manufacturing silicon carbide semiconductor device

A method of manufacturing a semiconductor device according to the present invention includes the steps of (b) forming, on a back face of a dummy substrate and back faces of a plurality of semiconductor substrates, inorganic films having such thicknesses as to be resistant to a temperature of a thermal oxidizing treatment or a heat treatment and to sufficiently decrease an amount of oxidation or reducing gaseous species to reach the back faces of the dummy substrate and the plurality of semiconductor substrates, (c) disposing the dummy substrate and the plurality of semiconductor substrates in a lamination with surfaces turned in the same direction at an interval from each other, and (d) carrying out a thermal oxidizing treatment or post annealing over the surfaces of the semiconductor substrates in an oxidation gas atmosphere or a reducing gas atmosphere after the steps (b) and (c).

Method of manufacturing semiconductor device

A method for manufacturing an SiC semiconductor device according to the present invention includes the steps of (a) implanting an impurity into a surface layer of an SiC substrate at a concentration of 1&#xd7;10cmor higher, (b) forming a graphite film on a surface of the SiC substrate after the step (a), (c) activating the impurity by annealing the SiC substrate after the step (b), (d) removing the graphite film after the step (c), (e) oxidizing the surface of the SiC substrate to form an oxide film after the step (d), (f) removing the oxide film, and (g) measuring resistance of the SiC substrate by a four-point probe method after the step (f).

Method for manufacturing SiC semiconductor device

A method of manufacturing a semiconductor device according to the present invention includes the steps of: (a) introducing hydrogen and oxygen on a SiC substrate; and (b) subjecting the hydrogen and the oxygen to a combustion reaction on the SiC substrate to form a gate oxide film being a silicon oxide film on a surface of the SiC substrate by the combustion reaction.

Method of manufacturing a semiconductor device

A wafer WF is mounted in a substrate holder, and the substrate holder is placed in a film forming furnace. The film forming furnace is evacuated by a vacuum pump through a gas discharge part to remove remaining oxygen as completely as possible. Then, a temperature in the film forming furnace is heated to a range of 800&#xb0; C. to 950&#xb0; C. under reduced pressure while an inert gas such as Ar or helium (He) is being introduced through a gas introduction part. When the temperature reaches this temperature range, an inflow of the inert gas is stopped. Vaporized ethanol is introduced as a source gas into the film forming furnace through the gas introduction part, thus forming a graphite film on an entire surface of the wafer WF.

Method of manufacturing silicon carbide semiconductor device

A lock unit used for an electronic apparatus that includes a foldable and unfoldable housing that has a first surface that is foldable, and a second surface orthogonal to the first surface includes a lock member that locks the housing in a folded state, an operation member that moves the lock member and releases a lock of the housing by the lock member, and a transmission mechanism that transmits a driving force applied to the operation member to the lock member by changing an operating direction of the operation member to another direction, and moves the lock member in the other direction, wherein the operation member is provided on the second surface, and an operating direction of the operation member is a first direction perpendicular to the second surface, the lock member projecting in a second direction orthogonal to the first surface, and a moving direction of the lock member being a third direction orthogonal to the first and second directions.

Electronic apparatus having lock unit

A first centrifugal impeller and a second centrifugal impeller are arranged in such an orientation that back sides of the first centrifugal impeller and the second centrifugal impeller face to each other. Bearings are cylindrical roller bearings and a thrust bearing. The cylindrical roller bearings are arranged at two axially spaced supporting positions respectively, and support a radial load applied to the rotating shaft. The thrust bearing supports a thrust load applied to the rotating shaft.

Turbo compressor

Lock unit for foldable housing and electronic apparatus having the same

The magnetic memory device includes a magnetic shield film, and a magnetoresistive effect elementformed over the magnetic shield filmand including a magnetic layer, a non-magnetic layerand a magnetic layer, in which a magnetization direction of the first magnetic layer or the second magnetic layer is reversed by spin injection, and a second magnetic shield filmformed over the side wall of the magnetoresistive effect element. Thus, the arrival of the leakage magnetic field from the interconnection near the magnetoresistive effect elementcan be effectively prevented.

Magnetic memory device and method for fabricating the same

A ferromagnetic tunnel junction is disclosed. The ferromagnetic tunnel junction includes a pinned magnetic layer, a tunnel insulating film formed on the pinned magnetic layer, and a free magnetic multilayer body formed on the tunnel insulating film. The free magnetic multilayer body includes a first free magnetic layer, a diffusion barrier layer, and a second free magnetic layer stacked in this order on the tunnel insulating film. The first free magnetic layer and the second free magnetic layer are ferromagnetically coupled with each other. The diffusion barrier layer inhibits the additive element contained in the first free magnetic layer from diffusing into the second free magnetic layer.

Ferromagnetic tunnel junction, magnetic head using the same, magnetic recording device, and magnetic memory device

The magnetoresistive effect element comprises a pinned magnetic layerhaving a multilayered synthetic antiferromagnet (SAF) structure, a nonmagnetic spacer layerformed on the pinned magnetic layer, a free magnetic layerformed on the nonmagnetic spacer layerand formed of a single ferromagnetic layer, a nonmagnetic spacer layerformed on the free magnetic layer, and a pinned magnetic layerof a multilayered SAF structure formed on the nonmagnetic spacer layer, wherein a magnetization direction of the ferromagnetic layerof the pinned magnetic layer, which is nearest the free magnetic layer, and a magnetization direction of the ferromagnetic layerof the pinned magnetic layer, which is nearest the free magnetic layer, are opposite to each other.

Magnetoresistive effect element and magnetic memory device

A magnetoresistive effect element is a compound lamination including a first anti-ferromagnetic layer, a first fixed magnetic layer, a tunnel insulation layer, a free magnetic layer, a non-magnetic metal layer, a second fixed magnetic layer, and a second anti-ferromagnetic layer such that a TMR element and a SVMR element are formed, sharing the free magnetic layer.

Magnetoresistive effect element, a magnetic head, and a magnetic reproducing apparatus therewith

A magnetic sensor including a ferromagnetic tunnel junction, comprises a free layera magnetic direction of which freely rotates, and a barrier layerformed on the free layer and reduces a thickness in a first region, the free layer in a region corresponding to the first region functioning as a sensor portion for sensing an external magnetic field. Such magnetic sensor can provide magnetic sensors, magnetic heads and magnetic encoders having high sensitivity. Furthermore, such magnetic sensor can provide magnetic heads which are adaptable to high recording density of magnetic storage mediums, and hard disk devices of large storage capacities using the magnetic heads.

Magnetic sensor, magnetic head, magnetic encoder and hard disk device

A dedicated read IC chip is mounted on a head suspension. The dedicated read IC chip is located closer to a read element. A stray capacitance of a wiring can be reduced. Even if the electric resistance value of the read element increases, the magnetic information data of a higher density can be read out. Moreover, the dedicated read IC chip generates little heat. Even if the dedicated read IC chip is located on the head suspension, an excessive heat cannot be transmitted to the head suspension from the dedicated read IC chip. The mechanical properties and shape of the head suspension can be maintained as expected.

Disk drive with read IC chip and write IC chip mounted respectively on suspension and arm

Growing community of inventors

Tokyo, Japan

Kazuo Kobayashi