Kabushiki Kaisha Toshiba

Kawasaki Steel Corporation

Mitsubishi Denki Kabushiki Kaisha

Toshiba Kikai Kabushiki Kaisha

Kanto Special Steel Works, Ltd.

Honda Giken Kogyo Kabushiki Kaisha

Sumitomo Metal Industries, Inc.

Toshiba Solutions Corporation

Taikisha Ltd.

Kabushiki Kaishi Toshiba

Sumitomo Metal Ceramics Inc.

Jsr Elastomix Co., Ltd.

Kazuo Kimura

Jun Monma

Keiichi Yano

Fumio Ueno

Akihiro Horiguchi

Mitsuo Kasori

Hiroyasu Sumino

Katsuyoshi Oh-Ishi

Kazuhisa Hemmi

Takazumi Watanabe

Hiroshi Uchimura

Iwao Asada

Masayuki Tatara

Koji Yamakawa

Takashi Takahashi

Susumu Yoshida

Mitsuyoshi Endo

Hironori Asai

Koji Morioka

Yoshitoshi Sato

Hiroshi Itaya

Hideaki Tojo

Hiroshi Takamichi

Hideshi Katayama

Shizuki Hashimoto

Teruo Kanetsuna

Tomotaka Miyazaki

Daigo Yoshii

Nobuyuki Endo

Seizo Katayama

Motone Sugiyama

Yoshinori Hata

Keiji Shimizu

Hirohisa Osoguchi

Haruki Kabe

Isamu Saitou

Toshishige Yamamoto

Masafumi Fujii

Kouji Yamakawa

Masahiko Satoh

Naohiko Murata

Minoru Horie

Kazuhiro Ohashi

According to one embodiment, a forgetting to turn off power detection apparatus includes an outgoing determination unit that creates a power usage pattern based on electric energy that is calculated from past electric energy data in a consumer equipment, and determines whether or not a consumer has gone outside based on the power usage pattern. The forgetting to turn off power detection apparatus of the embodiments includes a forgetting to turn off power detection unit that receives current electric energy data in the consumer equipment, and detects forgetting to turn off power of an electric equipment of the consumer equipment based on the received electric energy data when the outgoing determination unit determines that the consumer has gone outside.

Forgetting to turn off power detection apparatus, forgetting to turn off power detection program, forgetting to turn off power detection method and detection system

Method and apparatus for short-term relining or construction of a blast furnace uses a grounding apparatus for grounding of ring-shaped blast furnace segments having shells and a casting floor present as a blast furnace floor for transferring the ring-shaped blocks or shells onto a foundation of the blast furnace, and capable of safely and precisely mounting the ring-like blocks on the casting floor, wherein the grounding apparatus is integrated with a jack system utilizing rod type lift jacks and a sliding apparatus installed with intermittently movable hydraulic cylinders for safe and precision mounting of the ring-shaped blocks or shells on the casting floor.

Method and apparatus for short-term relining or construction of blast furnace

An olefinic thermoplastic elastomer composition which does not exhibit problems due to a softening agent such as an oil is superior in molding processability. The thermoplastic elastomer composition is produced by a heat crosslinking process of a resin-rubber composition that contains an olefinic and/or diene rubber, an olefinic resin, and a vinyl copolymer. The vinyl copolymer is obtained by copolymerizing 20 wt % or more of a vinyl monomer represented by CH &boxH;CHOCOR or CH &boxH;CHOR wherein R and R are alkyl groups having 1-6 carbon atoms. The thermoplastic elastomer composition can include a vinyl copolymer that has not undergone a heat crosslinking process.

Olefinic thermoplastic elastomer composition

In this screen manufacturing method, a method of effectively cooling flat display panels (1) which form a display screen is provided. A mechanism for cooling the flat display panels (1) is also provided. More specifically, in this manufacturing method, when a display screen (50) is assembled, clearances (41) are provided between modules (40) in which the flat display panels (1) are lined up to, thereby facilitate air circulation driven by a fan (42). Further, a radiation member is fitted to a holder which fixes the flat display panels (1). Thus, a surface area of the holder becomes larger by a portion equivalent to the radiation member, whereby radiative cooling is enhanced.

Screen manufacturing method using flat display panels and radiation

A screen manufacturing method makes it possible to manufacture a display screen using flat display panels and to consistently form a flat display screen. More specifically, m flat display panels are fixed on a holder during a manufacturing process of the display screen, and then a flexible substrate is fixed to electrode pins of a flat display panel which project over a back surface of the holder so as to form a unit. After fitting a frame to the unit, a part on which a connector is arranged with a part of the flexible substrate being bent is fitted on a surface of the frame so as to form a submodule. Then, by connecting submodules, a module is formed. By assembling the module, a display screen is produced.

Screen manufacturing method using flat display panel

A semiconductor chip is supported on a tape carrier provided with lead wirings. The semiconductor chip is electrically connected to the lead wirings. The semiconductor chip of this quality is bonded in combination with the pe carrier to an aluminum nitride substrate. The lead wirings provided on the carrier combine the two functions as an internal lead and an external lead. The semiconductor package of such a structure as is described above allows multi-terminal connection by the narrowing of pitches between the leads and permits provision of a miniature package excelling in the heat-radiating property. Alternatively, the lead wirings supported on the tape carrier and electrically connected to the semiconductor chip are utilized as internal leads. For the external leads, such lead frames as are bonded to the aluminum nitride substrate are used. The lead frames are electrically connected to the internal leads provided in the tape carrier.

Semiconductor device having a tab chip on a tape carrier with lead

An automatic programming apparatus is provided to generate a NC program for processing a roll having a cylindrical part and axle parts. The apparatus includes a roll-profile setting module, a process-condition setting module, a process-order setting module and an automatic programming module. The roll-profile setting module establishes dimensional values of the roll between an operator and the apparatus at every locational code, while the process-condition setting module establishes a plurality of process conditions at every process code, interactively. The process-order setting module combines the locational codes with the process codes at every process order, optionally and interactively, so that the process order of the cylindrical part and the axle parts is set while allocating any one of the process conditions. The automatic programming module generates the NC program for executing a series of roll process, on the basis of the combination of the process code and the locational code set by the process-order setting module.

Automatic programming apparatus for numerically controlled roll grinder

A method of measuring a roll diameter of a roll is provided. At first, a step-shaped conical master roll consisting of a plurality of diametrical parts is prepared and then, the diameters of the diametrical parts under predetermined standard temperature are measured. After mounting the master roll on a roll grinder under a temperature condition similar to that surrounding the roll mounted on the roll grinder, a diameter of one diametrical part, of which standard diameter is closest to the roll diameter of the roll, is measured. Next, a difference between the diameter value of the diametrical part and the standard diameter value is calculated as a correction value, so that the roll diameter value of the roll is corrected by the correction value.

Method of and instrument for measuring roll diameter in roll grinder

Disclosed is a sintered aluminum nitride composition and a circuit substrate for use in semiconductor device. The sintered aluminum nitride composition comprises: aluminum nitride; a first component given by a compound containing an element which is selected from the group consisting of alkaline earth elements and group IIIa elements of the periodic table; a second component made of either a simple silicon or a silicon-containig compound; and a third component made of either a simple manganese or a manganese-containing compound. The circuit substrate has an insulating layer which is compoesd of the above-described sintered aluminum nitride composition, and an electrically conductive layer containing an electrically conductive material and the same components as those of the insulating layer.

Sintered aluminum nitride and circuit substrate using sintered aluminum

Disclosed is a circuit substrate and a semiconductor device to which the circuit substrate is applied. The circuit substrate has an insulating layer and an electrically conductive layer. The insulating layer is composed of a sintered aluminum nitride composition containing: aluminum nitride; a first component given by a compound containing an element which is selected from the group consisting of group IIa elements and group IIIa elements of the periodic table; a second component given by either a simple boron or a boron compound; and a third component give by either a simple manganese or a manganese compound. The electrically conductive layer contains: a conductive component given by a metal or an electrically conductive compound for exhibiting electric conductivity; aluminum nitride; the first component; the second component; and the third component. The semiconductor device has the above circuit substrate, a semiconductor element mounted on the circuit substrate, and a cap being tightly bonded to the circuit substrate with a sealing glass to cover the semiconductor element.

Circuit substrate including insulating layer of aluminum nitride and

A semiconductor package comprises an aluminum nitride substrate having a semiconductor element mounted thereon, a lead frame junctioned to the side of the aluminum nitride substrate directly contacting the mounted semiconductor element, and a ceramic sealing member junctioned to the aluminum nitride substrate so as to seal the semiconductor element. The lead frame has a coating layer of a nonmagnetic metallic material formed in a thickness of not more than 20 .mu.m on only one of the opposite surfaces of a lead frame matrix made of a ferromagnetic metal to which a bonding wire is to be junctioned. The layer of the nonmagnetic metallic material is formed by any of such thin film forming technique as the vacuum deposition technique, the spattering technique, and the plating technique. The coating layer formed on only one of the opposite surfaces of the lead frame matrix is capable of amply curbing the resistance and the dependency of inductance on frequency. The aluminum nitride substrate is capable of imparting an ideal ability to radiate heat. The semiconductor package enables a high-speed quality semiconductor element having such a high system clock frequency as is not less than 50 MHz to be operated stably.

Semiconductor package using an aluminum nitride substrate

In a distortion compensating circuit, an initial value sufficient to provide a distortion compensating effect is previously set in a memory storage for storing distortion compensating data, whereby the convergence time of the distortion compensating effect is shortened.

Distortion compensating circuit

Fluidized bed gas dispersing device

Fluidized bed type preliminary reducing furnace for oxide raw material

Growing community of inventors

Tokyo, Japan

Kazuo Kimura