Asahi Glass Company, Limited

Mitsubishi Electric Corporation

Mitsubishi Denki Kabushiki Kaisha

Kazuo Kadowaki

Takashi Sugiyama

Kazuyuki Hayashi

Masaki Mikami

Takuji Oyama

Atsushi Michimori

Takanori Iida

Norihiro Watanabe

Takumi Kijima

Tatsuro Hirose

Taisuke Murata

Mitsue Takamori

Akio Kirimura

Chiaki Nobuoka

Kazyuki Hayashi

Naoko Shin

Tadamitsu Isonaka

Jun Nosaka

Kouichi Katsumi

A laser light-source apparatus according to the present invention is equipped with: a laser-driving circuit board, thermal insulators that are placed on the laser-driving circuit board; a heat receiving plate that is placed on the thermal insulators and thermally insulated from the laser-driving circuit board, a laser light-source module that is installed on the heat receiving plate so as to be thermally connected to the heat receiving plate and is also electrically connected to the laser-driving circuit board so as to be driven thereby, and a heat sink that is thermally connected to the heat receiving plate via a heat pipe.

Laser light-source apparatus and projector apparatus

A projection type image display apparatus includes an optical engine that emits a light according to image signal, a Fresnel lens on which the light emitted by the optical engine is incident and emitting the light as a parallel light, and a diffusion member that diffuses the parallel light emitted by the Fresnel lens. The projection type image display apparatus further includes a driving unit that moves the Fresnel lens or the diffusion member in a plane parallel to an emitting surface of the Fresnel lens or the diffusion member, a frame the supports the Fresnel lens, the diffusion member and the driving unit, a resilient supporting body that supports a weight of the Fresnel lens or the diffusion member with respect to the frame, and a holding unit that holds the Fresnel lens or the diffusion member so as to be movable in the plane parallel to the emitting surface of the Fresnel lens or the diffusion member.

Projection type image display apparatus

Provision of a reflective mask blank for EUV lithography having an absorber layer which has a low reflectance in the wavelength regions of EUV light and pattern inspection light and whose film composition and film thickness are easily controllable to desired ones. A reflective mask blank for EUV lithography, which comprises a substrate, and a reflective layer to reflect EUV light and an absorber layer to absorb EUV light, formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta), boron (B) and silicon (Si), and in the absorber layer, the content of B is at least 1 at. % and less than 5 at. % and the content of Si is from 1 to 25 at. %, and wherein the absorber layer contains no nitrogen (N) or at most 10 at. % of N.

Reflective mask blank for EUV lithography

Provided are a substrate with a conductive film for an EUV mask blank in which the generation of particles due to abrasion between an electrostatic chuck and the substrate is prevented; and a substrate with a multilayer reflective film and an EUV mask blank each employing such a substrate with a conductive film. A substrate with a conductive film to be used for producing a reflective mask blank for EUV lithography, the conductive film containing chromium (Cr) and nitrogen (N), the average concentration of N in the conductive film being at least 0.1 atomic % and less than 40 atomic %, the crystal state of at least a surface of the conductive film being amorphous, the sheet resistance of the conductive film being at most 27 &#x3a9;/&#x25a1;, and the surface roughness (rms) of the conductive film being at most 0.5 nm.

Reflective mask blank for EUV lithography, and substrate with functional film for the mask blank

To provide a reflective mask blank for EUV lithography having an absorber layer, which presents a low reflectance to a light in the wavelength ranges of EUV light and pattern inspection light, and which is easily controlled to have desired film composition and film thickness. A reflective mask blank for EUV lithography, comprising a substrate, and a reflective layer for reflecting EUV light and an absorber layer for absorbing EUV light formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta), boron (B), silicon (Si) and nitrogen (N), and in the absorber layer, the B content is at least 1 at % and less than 5 at %, the Si content is from 1 to 25 at %, and the compositional ratio of Ta to N (Ta:N) is from 8:1 to 1:1.

To provide an EUV mask blank of which the decrease in the reflectance during EUV exposure is suppressed, and a substrate with a functional film to be used for production of such an EUV mask blank. A substrate with a reflective layer for EUV lithography, comprising a substrate, and a reflective layer for reflecting EUV light and a protective layer for protecting the reflective layer formed in this order on the substrate, wherein the protective layer contains ruthenium (Ru) and at least one element selected from the group consisting of boron (B) and zirconium (Zr); and in the protective layer, the Ru content is from 70 at % to 95 at % and the total content of B and Zr is from 5 at % to 30 at %.

Reflective mask blank for EUV lithography and substrate with functional film for the same

A reflective mask blank for EUV lithography, which comprises a substrate, and a reflective layer to reflect EUV light and an absorber layer to absorb EUV light, formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta) and hafnium (Hf), and in the absorber layer, the content of Hf is from 20 to 60 at. % and the content of Ta is from 40 to 80 at. %, and wherein the absorber layer has a content of N being 0 to at most 35 at. %.

To provide a reflective mask blank for EUV lithography having an absorber layer which has a low reflectance in a wavelength region of EUV light or light for inspection of a pattern and which is easy to control to have a desired layer composition and thickness. A reflective mask blank for EUV lithography, which comprises a substrate, and a reflective layer to reflect EUV light and an absorber layer to absorb EUV light, formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta) and hafnium (Hf), and in the absorber layer, the content of Hf is from 20 to 60 at. % and the content of Ta is from 40 to 80 at. %.

A high reflectance mirror having a high reflectance in a visible-light region, being excellent in durability such as a moisture resistance, a saltwater resistance, etc. and having small dependence on incident angle (i.e., the fluctuation of the reflectance depending on an incident angle of light is little) is provided. The high reflectance mirror comprises a substrate and a silver film, a low refractive index film and a high refractive index film laminated on the substrate in this order wherein an adhesion improving film is formed on the silver film surface on the opposite side of the substrate, the extinction coefficient of the low refractive index film is at most 0.01, the extinction coefficient of the high refractive index film is at most 0.01, the adhesion improving film is an oxide film and the extinction coefficient of the adhesion improving film is at most 0.1.

High reflectance mirror

A remote control apparatus for use with an equipment which includes a master apparatus and a slave apparatus remotely located from the master apparatus. The master apparatus transmits a control signal to the slave apparatus so as to remotely control the slave apparatus. The master apparatus has a light-transmitting section therein which projects outwardly of the master apparatus. The light-transmitting section transmits a light signal representing a control signal generated in the master apparatus. The slave apparatus has a light-receiving section therein which receives the light signal. The light-transmitting section may be detachably mounted to the master apparatus. The light-transmitting section may be adapted to rotate relative to the master apparatus after the light-transmitting section has been mounted to the master apparatus. The light-transmitting section may include a plurality of light-emitting elements so that light is emitted over a wide area.

Growing community of inventors

Chiyoda-ku, Japan

Kazuo Kadowaki