Kabushiki Kaisha Toshiba

Tokyo Shibaura Denki Kabushiki Kaisha

Kazuo Ikeda

Michiyasu Komatsu

Nobuyuki Mizunoya

Hiroshi Komorita

Yoshitoshi Sato

Shun-ichiro Tanaka

Akio Sayano

Takayuki Naba

Tadashi Tanaka

Tadashi Miyano

Kazuo Matsumura

Syoji Okada

Kazuyuki Kondo

Tatsuya Imaizumi

Nichiyasu Komatsu

There is provided a semiconductor module which comprises a high thermal conductive silicon nitride substrate,having a thermal conductivity of 60 w/m&middot;k or more, a semiconductor element,mounted on this high thermal conductive silicon nitride substrate,, metal circuit plates,which are bonded on the semiconductor element-mounted side of this high thermal conductive silicon nitride substrate,and single metal plate 4,which is bonded to a side opposing to the semiconductor element-mounted side of this high thermal conductive silicon nitride substrate and is bonded on an apparatus casing,or a mounting board. By this constitution, there can be provided a semiconductor module having a simple structure, which can be miniaturized, and having an improved structure strength and an excellent heat cycle resistance property without requiring a heat sink plate or the like.

Silicon nitride circuit board and semiconductor module

This invention provides a silicon nitride circuit board in which a metal circuit plate is bonded to a high thermal conductive silicon nitride substrate having a thermal conductivity of not less than 60 W/m K, wherein a thickness D.sub.S of the high thermal conductive silicon nitride substrate and a thickness D.sub.M of the metal circuit plate satisfy a relational formula D.sub.S .ltoreq.2D.sub.M. The silicon nitride circuit board is characterized in that, when a load acts on the central portion of the circuit board which is held at a support interval of 50 mm, a maximum deflection is not less than 0.6 mm until the silicon nitride substrate is broken. The silicon nitride circuit board is characterized in that, when an anti-breaking test is performed to the circuit board which is held at a support interval of 50 mm, an anti-breaking strength is not less than 500 MPa. The metal circuit plate or a circuit layer are integrally bonded on the silicon nitride substrate by a direct bonding method, an active metal brazing method, or an metalize method. According to the silicon nitride circuit board with the above arrangement, high thermal conductivity and excellent heat radiation characteristics can be obtained, and heat cycle resistance characteristics can be considerably improved.

Silicon nitride circuit board

This invention provides a silicon nitride circuit board in which a metal circuit plate is bonded to a high thermal conductive silicon nitride substrate having a thermal conductivity of not less than 60 W/m K, wherein a thickness D.sub.s of the high thermal conductive silicon nitride substrate and a thickness D.sub.M of the metal circuit plate satisfy a relational formula D.sub.s .ltoreq.2D.sub.M. The silicon nitride circuit board is characterized in that, when a load acts on the central portion of the circuit board which is held at a support interval of 50 mm, a maximum deflection is not less than 0.6 mm until the silicon nitride substrate is broken. The silicon nitride circuit board is characterized in that, when an anti-breaking test is performed to the circuit board which is held at a support interval of 50 mm, an anti-breaking strength is not less than 500 MPa. The metal circuit plate or a circuit layer are integrally bonded on the silicon nitride substrate by a direct bonding method, an active metal brazing method, or an metalize method. According to the silicon nitride circuit board with the above arrangement, high thermal conductivity and excellent heat radiation characteristics can be obtained, and heat cycle resistance characteristics can be considerably improved.

High thermal conductive silicon nitride sintered body, method of

This invention provides a ceramic circuit board comprising: a ceramic base board; a metal circuit plate integrally bonded onto a surface of the ceramic base board; a terminal connecting port formed by bending a part of the metal circuit plate for connecting a terminal of a module, the terminal connecting port being formed so that the terminal connecting port is raised from a surface of the ceramic base board, and a curvature radius of the bent portion provided on the terminal connecting port is set to 0.2 mm or more. An empty communication hole such as groove or through hole may also be formed at a bonding surface between the metal circuit plate and the ceramic base board.

Ceramic circuit board with a curved lead terminal

A wear-resistant member formed comprises a sintered ceramic body essentially consisting of 0.1 to 15% by weight of at least one material selected from the group comprising molybdenum carbide, niobium carbide, hafnium carbide, tantalum carbide, tungsten carbide, molybdenum silicide, niobium silicide, hafnium silicide, tantalum silicide, tungsten silicide, molybdenum boride, niobium boride, hafnium boride, tantalum boride, and tungsten boride, 2 to 20% by weight of a boundary phase selected from the group consisting of Si--Y--Al--O--N and Si--Y--Al--O--N--B, and a balance of .beta.-silicon nitride. The wear-resistant member preferably has a metal member bonded to the sintered ceramic body. The wear-resistant member can perform high-load work such as high-speed cutting.

Wear-resistant member

Disclosed is a ceramics bonded product, which comprises a ceramics sintered body bonded to another ceramics sintered body or a metal member through a ductile metal and a group IVa transition metal nitride interposed therebetween. Also disclosed is a method of producing a ceramics bonded product, which comprises bonding a ceramics sintered body and another ceramics sintered body or a metal member by allowing a ductile metal and a group IVa transition metal nitride to exist therebetween.

Ceramics bonded product and method of producing the same

A method of manufacturing a sintered ceramic body which has a conductive layer and which is suitable for bonding with a metal member, has the steps of coating at least part of a surface of an unsintered ceramic powder compact with a coating material which has a melting point or decomposition point higher than a sintering temperature of the compact and which is selected from the group consisting of a metal, a metal salt, a conductive inorganic material and a nonconductive inorganic material which becomes conductive after sintering, and sintering a resultant structure, thus forming the sintered ceramic body having a conductive layer on at least part of the surface thereof.

Method of manufacturing sintered ceramic body

A non-oxide-series-sintered ceramic body, which has a conductive film on its surface and which permits a strong bond to a metal member, the conductive film comprising a metal silicide selected from the group consisting of molybdenum silicide and tungsten silicide.

Growing community of inventors

Yokohama, Japan

Kazuo Ikeda