Oki Electric Industry Co., Ltd.

Nippon Telegraph and Telephone Public Corporation

Kazuo Hagimura

Kotaro Kato

Haruo Mori

Jun Ueda

Hiroyasu Torazawa

Kenji Mizuuchi

Hirokazu Tsukada

The present invention relates to a light-activated semiconductor device comprising light-emitting elements for emitting light respectively, light-receiving elements for producing driving voltages in response to the light respectively and output elements activated in response to the driving voltages respectively. The light-receiving elements are disposed on two planes opposed to each other. The output elements are disposed on their corresponding planes in opposing relationship.

Light-activated semiconductor device having light-emitting elements,

A PNPN semiconductor switch including an N type semiconductor substrate, spaced apart first and second P type diffused regions formed on a surface of an N type substrate, spaced apart first and second N type diffused regions formed in the second P type diffused region, a first gate insulating layer formed on the surface of the second P type diffused region between the first and second N type diffused regions to cover portions thereof, a first gate electrode formed on the first gate insulating layer between the first and second N type diffused regions, a resistance region disposed on the first gate insulating layer, one end of the resistance region on the side opposite to the first gate electrode, a second gate insulating layer overlying the first gate electrode and the resistance region, a semiinsulating layer formed on the surface of the substrate except over the first and second P type diffused regions, an insulating layer overlying the semiinsulating layer, a P gate electrode electrically connected to the second P type diffused region and the second N type diffused region, a second gate electrode formed on the second gate insulating layer at a portion above the first gate electrode, a cathode electrode connected to the first N type diffused region, an anode electrode connected to the first P type diffused region and the second gate electrode and a high resistance region formed immediately beneath the first gate insulating layer and between the first and second N type diffused regions.

PNPN Light sensitive semiconductor switch with phototransistor connected

A circuit for preventing a dV/dt erroneous operation of a PNPN semiconductor switch is replaced by a capacitance on the surface of a semiconductor substrate, a high resistance gate electrode. In other words, such a circuit is formed on the surface of the substrate by a slight modification of the basic design without decreasing the chip area and without isolating component elements.

PNPN Semiconductor switches

Growing community of inventors

Tokyo, Japan

Kazuo Hagimura