Tokyo Electron Yamanashi Limited

Tokyo Electron Limited

Other

Kazuo Fukasawa

Satoshi Kagatsume

Nobukazu Ikeda

Tadahiro Ohmi

Kouji Nishino

Ryousuke Dohi

Jun Hirose

Hiroshi Koizumi

Eiji Ideta

Hideki Nagaoka

Takashi Ito

Hiroshi Nishikawa

Kazuhiro Yoshikawa

Takashi Hirose

Junichi Arami

Yoshifumi Tahara

Tomio Uno

Kosuke Imafuku

Ryo Nonaka

Izumi Arai

Shosuke Endo

Shunichi Iimuro

Yutaka Miura

Shozo Hosoda

Seiichi Iida

Yoshinobu Mitano

Masachika Suetsugu

Kousuke Imafuku

A construction for mounting a pressure detector prevents the detector diaphragm from being strained by stress applied to the pressure detector as the detector is mounted in a fixture main body provided in a pipe line or the like, thereby keeping the output characteristics and temperature characteristics of the detector from greatly differing before and after the mounting. The pressure detector is constructed by combining and fastening together a diaphragm base having a diaphragm and a sensor base having a sensor element therein that is activated by displacement of the diaphragm base. The pressure detector, with a gasket placed thereunder, is disposed in a mounting hole of a fixture main body that is mounted in a pipe line. The pressure detector is air-tightly pressed and fastened by a presser member inserted from above in the mounting hole. The presser member is brought in contact with a block upper surface of the diaphragm base, and the gasket is also brought in contact with the block lower surface of the diaphragm base. A shallow groove is defined in the form of a ring on the lower surface of the block at a place inward of the portion contacting the metal gasket so that the shallow groove absorbs strain caused by the presser member.

Structure or construction for mounting a pressure detector

A method of detecting abnormalities in flow rate in pressure-type flow controller. The method checks the flow rate for abnormalities while controlling the flow rate of fluid in a pressure-type flow controller FCS using an orifice&mdash;the pressure-type flow controller wherein with the upstream pressure P maintained about two or more times higher than the downstream pressure P , the downstream flow rate Q is calculated by the equation Q &equals;KP (K: constant) and wherein the control valve CV is controlled on the basis of the difference signal Q between the calculated flow rate Q and the set flow rate Q .

Method of detecting abnormalities in flow rate in pressure-type flow controller

A plasma processing method in which a high-frequency power is supplied to a processing chamber in which an object to be processed is mounted, thereby producing a plasma in the processing chamber, and the object is processed in an atmosphere of the plasma, wherein the high-frequency power is subjected to modulation by a low-frequency power. In one embodiment a plasma is produced in a processing chamber by using an electric power with a direction of current changed with passing of time, and the object to be processed is processed in an atmosphere of the plasma, wherein a power having a basic frequency is subjected to frequency modulation with a frequency equal to n-times (n=an integer) the basic frequency. In a plasma processing apparatus of the invention, while a process gas is supplied to a processing chamber via a first gas introducing hole formed in an electrode, an object to be processed, which is held on an opposed electrode, is subjected to plasma processing. There is provided a resistance applying [means for applying] apply resistance to the process gas flowing to the processing chamber via the gas introducing hole from the gas introducing means such that a plasma discharge is prevented from occurring in the gas introducing means when a process pressure in the processing chamber is set at 0.5 Torr or less.

Plasma processing method and plasma processing apparatus

Gas diffusion plate for electrode of semiconductor wafer processing

Electrode for a semiconductor processing apparatus

A plasma processing apparatus having a pair of electrodes which are installed alternately in parallel in a chamber and in which an object to be processed is placed at one electrode thereof, radiofrequency applying device for applying radiofrequency power between the pair of electrodes, cooling device for cooling the object, drying-gas introducing tube for supplying a drying gas into the chamber, and dropwise-condensation preventing member installed at a portion of the chamber so as to be in contact with the outer atmosphere. The apparatus can prevent dropwise condensation at the time of cooling and at the same time prevent the occurrence of radiofrequency leakage.

Plasma processing apparatus including condensation preventing means

Prior to plasma etching, a wafer is placed on conductive support pins which extend through an electrostatic chuck. The electrostatic chuck is disposed on a susceptor incorporating a cooling jacket. A potential for electrostatic attraction is applied to the electrostatic chuck. The support pins are lowered while they are grounded, thus placing the wafer on the electrostatic chuck. Subsequently, the support pins are retracted into the electrostatic chuck to release contact between the wafer and themselves. A heat medium gas is then supplied between the wafer and the electrostatic chuck to improve the heat transfer rate therebetween. A plasma is then generated in a process chamber, and the wafer is etched by using the plasma. Since the heat transfer rate between the wafer and the electrostatic chuck is improved before the generation of the plasma, damage to the wafer due to heat can be prevented, and the starting time required to start an etching process is shortened.

Plasma process method using an electrostatic chuck

A wafer mount is arranged in a process chamber of the plasma etching apparatus. The rim section of a susceptor which serves as a mount body is curved at a large curvature radius. An electrostatic chuck sheet is arranged on the top of the susceptor and its rim is curved downward along the curved rim section of the susceptor, departing from the marginal portion of a semiconductor wafer mounted thereon as it comes outward. The rim of the electrostatic chuck sheet can be thus shortened in the horizontal direction and this enables a conductive film in the electrostatic chuck sheet to be made longer in the same direction. The electrostatic and thermal connection of the wafer to the electrostatic chuck sheet can be thus enhanced.

Mount for supporting substrates and plasma processing apparatus using

An etching device comprising a housing in which etching process is carried out, an electrode system having lower and upper electrodes opposed to each other used to generate plasma between these electrodes, while a semiconductor wafer is being placed on the lower electrode, a lifter system to move the lower electrode up and down, a high-frequency power source for applying current between these electrodes, a holder member located between the lower and upper electrodes to hold the wafer at a certain position between these electrodes, and a gas supply means for supplying reaction gases used to generate plasma, between the lower and upper electrodes.

Etching device, and etching method

Growing community of inventors

Kofu, Japan

Kazuo Fukasawa