Panasonic Corporation

Matsushita Electric Industrial Co., Ltd.

Panasonic Intellectual Property Management Co., Ltd.

Glory Ltd.

Kazuo Fujiwara

Mitsuyoshi Mori

Takumi Yamaguchi

Toru Okino

Mikiya Uchida

Yusuke Otake

Kazunari Nishihara

Tetsuro Shimamura

Yasuhiro Shimada

Yutaka Hirose

Motonori Ishii

Kazutoshi Onozawa

Shigeru Saitou

Mitsuhisa Yoshimura

Naoki Tatehata

Manabu Usuda

Masami Tsubaki

Hayato Kato

Keiji Nagasaka

Kanji Kato

Mikio Degawa

Tatsushi Ota

Katsuyoshi Shingu

A 3D imaging apparatus includes: a first image capturing camera generating a base image to be used for obtaining a first range image showing a three-dimensional character of an object; a second image capturing camera generating a reference image to be used for obtaining the first range image; a stereo matching unit searching for corresponding pixels between the base image and the reference image, and generating a first range image by calculating a disparity between the corresponding pixels; and a light source emitting to the object infrared light whose intensity is modulated. The first image capturing camera further generates a second range image by receiving a reflected light in synchronization with the modulated intensity. The reflected light is the infrared light reflected off the object. The second range image includes range information on a range between a point of reflection off the object and the first imaging unit.

3D imaging apparatus

A solid-state imaging device in which a plurality of pixels are two-dimensionally arranged includes a silicon layer; a plurality of photodiodes which are formed in the silicon layer to correspond to the pixels and generate signal charges by performing photoelectric conversion on incident light; and a plurality of color filters formed above the silicon layer to correspond to the plurality of the pixels. A protrusion is formed in a region on a side of the silicon layer between adjacent ones of the color filters wherein the protrusion has a refractive index lower than refractive indices of the adjacent ones of the color filters and, each of the color filters is in contact with the adjacent ones of the color filters, above the protrusion.

Solid-state imaging device and method of manufacturing the solid-state imaging device

A fluid dispersion obtained by mixing oxide particles and water is sprayed to a raw aluminum foil from a direction opposite to a travelling direction of the raw aluminum foil while the raw aluminum foil is allowed to travel. In this way, a roll-pressed mark of the raw aluminum foil is eliminated, and thus aluminum foil for aluminum electrolytic capacitor electrode is produced. Pyramidal-shaped recesses each having an acute angle tip are present all over a surface of the aluminum foil.

Aluminum foil for aluminum electrolytic capacitor electrode and method for manufacturing the same

In each of pixelsarranged in an array pattern, an insulating isolation partelectrically isolates adjacent photoelectric conversion elements, and the photoelectric conversion elementand an amplifier transistor. The insulating isolation partconstitutes a first region A between the photoelectric conversion elementswhere the amplifier transistoris not arranged, and a second region B between the photoelectric conversion elementswhere the amplifier transistoris arranged. A low concentration first isolation diffusion layeris formed below the insulating isolation partconstituting the first region A, and a high concentration second isolation diffusion layerand a low concentration first isolation diffusion layerare formed below the insulating isolation partconstituting the second region B. A source/drain region of the amplifier transistorin the second region B is formed in a well regionformed simultaneously with the second isolation diffusion layer

Solid state imaging device

Each of pixelsarranged in an array pattern includes a photoelectric conversion element, a transfer transistorfor transferring charges to a floating diffusion layer, and an amplifier transistorfor outputting the transferred charges to an output line. An insulating isolation partisolates the adjacent photoelectric conversion elements, and isolates the photoelectric conversion elementand the amplifier transistor. The insulating isolation partconstitutes a first region A between the photoelectric conversion elementswhere the amplifier transistoris not arranged, and a second region B between the photoelectric conversion elementswhere the amplifier transistoris arranged. First and second isolation diffusion layersandare formed below the insulating isolation part, and the second isolation diffusion layeris wider than the first isolation diffusion layerin the first region A.

Solid state imaging device including source/drain region of amplifier transistor being disposed in isolation diffusion layer

A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively.

Solid state imaging apparatus and method for fabricating the same

An apparatus for determining the authenticity includes a light-emitting unit that emits a light including the first wavelength to the paper sheet; a first blocking unit that is arranged between the light-emitting unit and the paper sheet, and blocks off a light of a wavelength longer than the first wavelength; a light-receiving unit that receives a light including a second wavelength emitted from the paper sheet; a second blocking unit that is arranged between the light-receiving unit and the paper sheet, and blocks off a light of a wavelength shorter than the second wavelength. Finally, an authenticity determining unit determines an authenticity of the paper sheet based on the light received by the light-receiving unit.

Apparatus for determining the authenticity

Precise V-grooves allowing an optical fiber to project are formed in respective main surfaces of an upper plane substrate and a lower plane substrate. The optical fiber is mounted on one plane substrate, and a multi-layer film filteris inserted into a filter insertion groovecrossing the precise V-groove in the main surface of the other plane substrate. Then, using the projecting optical fiber and the other precise V-groove as a guide rail, two plane substrates grapple the multi-layer film filter to fix and mount the filter. In an optical filter module obtained in this manner, a process of adjusting an optical axis between input/output optical fibers is eliminated, and displacement of the inserted optical filter is reduced.

Optical filter module and manufacturing method thereof

An optical filter module of the present invention has a flat substrate, an optical path formed on the flat substrate; a filter insertion groove provided, crossing the optical path, on the flat substrate; a multilayer filter inserted, dividing the optical path, into the filter insertion groove; and a pair of covers disposed on the flat substrate so as to sandwich the multilayer filter. The present invention enables the omission of the process of adjustment of the optical axis, thus achieving high operability. At the same time, the present invention ensures fixing and mounting of the multilayer filter even if the multilayer filter is warped.

Growing community of inventors

Toyama, Japan

Kazuo Fujiwara