Kabushiki Kaisha Toshiba

Toshiba Electronic Devices & Storage Corporation

Kazuo Fujimura

Shinji Nunotani

Yoshiharu Takada

Shingo Masuko

Shinya Ito

Yoshiaki Sugizaki

Hideto Furuyama

Akihiro Kojima

Ichiro Mizushima

Yosuke Akimoto

Miyoko Shimada

Hideyuki Tomizawa

Mitsuyoshi Endo

Hideko Mukaida

Hironori Yamasaki

Shinsaku Kubo

Tadashi Ono

According to an embodiment, a semiconductor device includes a silicon substrate, a device layer, and a lower layer. The device layer is formed on an upper surface of the silicon substrate. The lower layer is formed on a lower surface of the silicon substrate and has a side surface connecting to a side surface of the silicon substrate. At least a pair of side surfaces of the semiconductor device has a curved shape widening from an upper side toward a lower side.

Semiconductor device and dicing method

A semiconductor device including: a semiconductor element, a substrate having a first surface on which the semiconductor element is provided, and a second surface located opposite the first surface, a metal species provided on the second surface, and a plated metal portion provided at least in part on the second surface on the metal species. The semiconductor device further includes a first region where the plated metal portion is provided and a second region where the plated metal portion is not provided are alternately arranged at a peripheral portion of the second surface.

Semiconductor device and manufacturing method thereof

According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a sealing member configured to cover a lower surface of the semiconductor layer and a side surface of the semiconductor layer to protrude to be higher than an upper surface of the semiconductor layer at a side of the semiconductor layer, a fluorescer layer provided above the semiconductor layer and the sealing member, and an insulating film provided between the sealing member and the semiconductor layer and between the sealing member and the fluorescer layer. A corner of a protruding portion of the sealing member is rounded.

Semiconductor light emitting device and method for manufacturing same

According to one embodiment, the second insulating film is provided between the first interconnect portion and the second interconnect portion, and at an outer periphery of a side face of the semiconductor layer. The optical layer is provided on the first side, and on the second insulating film at the outer periphery. The optical layer is transmissive with respect to light emitted from the light emitting layer. The film is provided between the second insulating film at the outer periphery and the optical layer. The film has a roughened surface on a side in contact with the optical layer.

Semiconductor light emitting device with a film having a roughened surface

According to one embodiment, the second insulating film is provided between the first interconnect portion and the second interconnect portion, and at an outer periphery of a side face of the semiconductor layer. The optical layer is provided on the first side and on the second insulating film at the outer periphery. The optical layer is transmissive with respect to light emitted from the light emitting layer. A plurality of protrusions and a plurality of recesses are provided at the first side. Peaks of the protrusions are positioned closer to the second side than an end on the second insulating film side of the optical layer at the outer periphery.

Semiconductor light emitting device

Growing community of inventors

Kanazawa Ishikawa, Japan

Kazuo Fujimura