Kabushiki Kaisha Toshiba

Diafoil Company, Ltd.

Diafoil Hoechst Company, Limited

Diafoil Hoescht Company, Limited

Kazuo Endo

Chikakazu Kawaguchi

Megumi Komiyama

Takashi Kimura

Masashi Inagaki

Yoshio Meguro

Masahiko Fujimoto

Takao Kato

Seiji Sakamoto

Tomoyuki Kotani

Toshifumi Takisawa

Nobuyasu Shudo

Masashi Tate

Takashi Harada

Shigeo Utsumi

Yoshinori Sato

Narihiro Masuda

Tatsuro Mitani

Kichinojo Tomitaka

Kouji Kikuchi

Shinobu Suzuki

Kenji Kato

Noboru Noda

Shigeyuki Watanabe

Takashi Kagiyama

Kazuyuki Akatsu

Kazuhiro Kunugihara

Yosio Meguro

A biaxially oriented polyester film for a magnetic recording medium contains: 1) at least two different sizes of synthetic calcium carbonate particles; and 2) aluminum oxide particles to produce a film with excellent surface uniformity, running properties, and slittability wherein the film generates few scratches and low amounts of abrasion dust. The synthetic calcium carbonate particles are surface treated with a polycarboxylic acid, followed by treatment with a phosphorus compound. The biaxially oriented polyester film can comprise a layer in a multilayer film.

Biaxially oriented polyester film for magnetic recording medium

A heat sensitive original sheet for stencil printing made of a laminate of a paper sheet and a biaxially oriented polyester film having a melting point of 150.degree. to 240.degree., a thickness of 0.2 to 3 .mu.m, an average refractive index of 1.570 to 1.578, a thermal shrinkage stress of 100 to 800 g/mm.sup.2 after being treated at 80.degree. C. for 10 seconds, a thermal shrinkage factor of 5 to 50% after being treated at 80.degree. C. for 10 minutes, a shrinkage factor of 15% or less after being treated in toluene at 25.degree. C. for 10 minutes, and a center line average surface roughness of 0.02 to 0.3 .mu.m, which original sheet is excellent in a perforation sensitivity, resistance to curling, and resolution and image density of a printed image.

Polyester film comprising a mixture of polyesters for highly heat

Disclosed is a film for high heat-sensitive stencil paper, comprising a biaxially oriented film having a thickness of 0.5 to 6.0 .mu.m and formed from a polyester composition comprising polybutylene terephthalate and another polyester, a ratio of the polybutylene terephthalate in the whole polyester being 20 to 80 wt %, a maximum value of average heat shrinkage stresses in the machine and transverse directions of the film measured at a film temperature of 60.degree. to 140.degree. C. being more than 300 g/mm.sup.2, and a heat shrinkage of the film by treatment at 100.degree. C. for 3 minutes being not less than 20%.

Film for high heat-sensitive stencil paper

A film for heat-sensitive stencil paper comprising a biaxially oriented film having a thickness of 0.5 to 6.0 .mu.m and formed from a polyester composition comprising polybutylene terephthalate and at least one other polyester, the content of the polybutylene terephthalate in the polyester composition being 20 to 80 wt %, the polyester composition has one melting point or a plurality of melting points with a difference of less than 10.degree. C. between the highest melting point and the lowest melting point.

A biaxially oriented laminated polyester film for magnetic recording media, which has excellent surface uniformity, slittability, running property and cost performance, and in which a magnetic tape produced therefrom shows a very small number of scratches and a very small amount of abrasion dust.

Biaxially oriented laminated polyester film for magnetic recording media

A polyester film having uniform surface and excellent running property and transparency is disclosed. Said polyester film is characterized by containing 0.01-5 wt. % of porous precipitated silica particles which are coagulates of primary particles having an average particle diameter of 0.01-0.1 .mu.m and have a pore volume of 0.05-0.5 ml/g, a specific surface area of 30-150 m.sup.2 /g and an average particle diameter of 0.1-0.5 .mu.m.

Polyester film comprising specific porous silica particles

A biaxially oriented polyester film containing a specific calcium carbonate is described. The calcium carbonate contained in the film is specified by its vaterite form, its average particles size of 0.07 to 1.5 .mu.m, and its particle size distribution ratio of not more than 2.00. The biaxially oriented polyester film containing such specific calcium carbonate is excellent in both the running property and wear resistance, and suitable for the use as a base of magnetic recording media.

Polyester film for magnetic recording media

Disclosed herein is a polyester film containing specific fine spherical silica particles. The film of the present invention is especially suitable as a base film for a magnetic recording medium or dielectric for a capacitor. The films of the present invention have the markedly improved properties such as surface properties, electromagnetic properties, electrical properties, etc. due to the excellent dispersibility of the particles in the film.

Polyester films, magnetic recording media and film capacitors produced

A biaxially oriented polyester film containing 0.01 to 4 wt % of multilayered high-molecular particles having a weight-average particle size of 0.05 to 3 .mu.m which comprise core crosslinked high-molecular particles having a glass transition temperature of not lower than 100.degree. C. coated with a crosslinked polymer having a glass transition temperature of lower than 100.degree. C., the ratio Dw/Dn of the weight-average particle size (Dw) and the number-average particle size (Dn) being not more than 1.3 is disclosed. The film of the present invention has excellent running property and wear resistance and is useful as a base film for various products such as magnetic recording media, capacitors, photomechanical plates, electric insulators, heat-sensitive transfer film, packaging film, transfer marks and gold and silver threads. Thus, the present invention has a high industrial value.

Biaxially oriented polyester film containing multilayered cross-linked

A semiconductor device comprises a first electrode provided on a semiconductor substrate, and constituting a lower wiring layer, an insulating layer provided on the first electrode and the substrate, and a second electrode, which constitutes an upper wiring layer and is connected to the first electrode through a contact hole pierced through the insulating layer. The first electrode includes at least one of high melting point metal layer and high melting point metal silicide layer. The surface of the insulating layer is flattened by heat treatment.

Semiconductor device having multi-layered wiring

A field-effect transistor wherein a gate electrode conductive layer is connected in parallel to a plurality of conductive layers having a lower resistivity than the gate electrode conductive layer, so that the gate resistance is reduced to provide a high power output and a noise reduction.

Field-effect transistor

Disclosed herein is a polyester film containing specific fine spherical silica particles. The film of the present invention is especially suitable as a base film for a magnetic recording medium or dielectric for a capacitor. The films of the present invention have the markedly improved properties such as surface properties, electromagnetic properties, electrical properties, etc. due to the excellent dispersibliity of the particles in the film.

A transistor comprising a radiator plate continuous to a base terminal, a plate member made of thermally conductive material, and secured on the radiator plate, a transistor pellet secured on the plate member, a metal lead wire for connecting a base electrode of the transistor pellet to the radiator plate, and a metal lead wire for connecting the upper side of the plate member to the collector terminal.

Transistor device

A gate structure of a MOS FET has an oxide layer and an electrode layer sequentially formed on a silicon substrate. In the gate structure, the electrode layer includes a first silicidized high-melting metal layer formed on the oxide layer, a high-melting metal layer formed on the first silicidized high-melting metal layer and a second silicidized high-melting metal layer formed on the high-melting metal layer.

Gate structure for a MOS FET

A semiconductor device comprises a semiconductor substrate, an insulating layer formed on the substrate, and a fuse deposited on the insulating layer so as to be interposed between two wiring layers. The fuse is prepared from high melting point metal silicide.

Growing community of inventors

Yokohama, Japan

Kazuo Endo