Matsushita Electric Industrial Co., Ltd.

Kazuo Eda

Yutaka Taguchi

Keiji Onishi

Shun-ichi Seki

Yoshihiro Tomita

Tetsuyoshi Ogura

Yoshihiro Bessho

Osamu Kawasaki

Shunichi Seki

Akihiro Kanaboshi

Akihiko Namba

Masanori Inada

Hiroaki Takezawa

Yorito Ota

Minehiro Itagaki

Michio Matsuoka

Masato Sugimoto

Hiroki Sato

Tsutomu Mitani

Tsukasa Shiraishi

Manabu Yanagihara

Hideki Iwaki

Atsushi Nakagawa

Tetsuji Miwa

Yasuharu Kikuchi

Katsuyuki Miyauchi

Toru Yamada

Masahide Tsukamoto

Masahiro Ono

Katsumi Imada

Hideo Hatanaka

Toru Ishida

Osamu Makino

Atsushi Komatsu

Masanobu Tanaka

Takashi Nagata

Tetsuyosi Ogura

Harumasa Kajita

Yasunobu Tsuji

Yosihiro Tomita

Yasushi Fukumura

Miho Sugihara

Makino Osamu

Mikio Ishida

Matsuoka Michio

Sakai Masayuki

Iga Atsushi

Inada Masanori

In a mounting structure including a first electrode and a second electrode electrically connected to each other via a conductive adhesive, the periphery of an adhesion portion between at least one of the electrodes and the conductive adhesive is covered with an electrical insulating layer, whereby the adhesion portion is reinforced from the periphery. The electrical insulating layer may be formed by dissolving a binder resin component of the conductive adhesive in a solvent. This increases the concentration of a conductive filler in the conductive adhesive, so that the conductivity of the adhesion portion is also enhanced.

Method for producing mounting structure for an electronic component

Mounting structure for an electronic component and method for producing the same

A stress relaxation type electronic component which is to be mounted on a circuit board, wherein a stress relaxation mechanism member is disposed on a surface of said electronic component, said surface being on a side of a connection portion where said electronic component is to be connected to said circuit board, and said stress relaxation mechanism member is electrically conductive.

Stress relaxation electronic part, stress relaxation wiring board, and stress relaxation electronic part mounted body

A manufacturing method for a semiconductor device using a wire bonding method using a metal wire. In the wire bonding method, an impact load applied when a metal ball formed at the tip of the metal wire by electric discharge is brought into contact with a terminal electrode of a semiconductor device is smaller than a static load applied after the metal ball is brought into contact with the terminal electrode. The method makes it possible to prevent an element or wiring from being damaged while securing the pressure necessary for bonding the metal ball to the terminal electrode even when the terminal electrode is placed on the element or the wiring.

Manufacturing method for semiconductor device, mounting method of semiconductor device, semiconductor device, and inspecting method of semiconductor device

A liquid jetting apparatus has a concave casing having an opened flat face, and a piezoelectric drive element for at least partly sealing the opened flat face to form a liquid reservoir to store a liquid, such as ink. The reservoir has a liquid injection port for injecting a liquid and a liquid jet port for jetting the stored liquid. The piezoelectric drive element is directly bonded to the open flat face.

Liquid jetting apparatus having a piezoelectric drive element directly bonded to a casing

A resonator ladder type surface acoustic wave filter, has an input electrical terminal, an output electrical terminal, and a grounding terminal being formed on a piezoelectric substrate, a series arm surface acoustic wave resonator and a parallel arm surface acoustic wave resonator, each constructed from an interdigital transducer for exciting a surface acoustic wave, being formed between said input electrical terminal and said output electrical terminal, and when the center frequency of said resonator ladder type surface acoustic wave filter is denoted by fc, and capacitance determined by the number of electrode finger pairs and electrode finger overlap width in said interdigital transducer of said parallel arm surface acoustic wave resonator is denoted by Cp (fc: center frequency [GHz], Cp: capacitance of the interdigital transducer of the parallel arm surface acoustic wave resonator), capacitance C of multiples of said parallel arm surface acoustic wave resonator, connected to the same node between said input electrical terminal and said output electrical terminal, always satisfies the relation

Resonator ladder type surface acoustic wave filter

The present invention relates to an electronic part used for mobile communications apparatuses and the like, and more particularly to an electronic part, such as an acoustic surface-wave device, a piezoelectric ceramic device or the like, which requires an oscillation space near the surface of the functional device chip thereof, and a method of production thereof. With this method, a space retainer for forming a sealed space at the functional portion of the chip can be hermetically sealed and have high moisture resistance, and the process of forming the space retainer can be carried out easily. The electronic part of the present invention comprises a functional device chip, a space retainer for forming a sealed space at the functional portion of the chip, a circuit substrate to which the chip is secured, electrode interconnection portions for establishing electric connection between the chip and the circuit substrate, and a sealing resin for covering and sealing at least the space retainer, wherein the space retainer comprises a support layer made of a synthetic resin film, provided with an opening enclosing the functional portion and joined onto the main surface, and a cover formed and joined onto the support layer so as to cover the functional portion and form a sealed space between the cover and the functional portion.

Electronic part and a method of production thereof

According to the present invention, a hybrid magnetic substrate is provided, which includes: a magnetic substrate; and a holding substrate directly bonded to the magnetic substrate through at least one of a hydrogen bond and a covalent bond. Furthermore, a method for producing a hybrid magnetic substrate having the magnetic substrate and the holding substrate is provided, which includes the steps of: cleaning a surface of the magnetic substrate to be bonded and a surface of the holding substrate to be bonded; allowing the cleaned surfaces to be subjected to a hydrophilic treatment; and attaching the surfaces, which are subjected to the hydrophilic treatment, to each other to directly bond the magnetic substrate to the holding substrate.

Hybrid magnetic substrate and method for producing the same

A high-frequency surface acoustic wave filter is such that a plurality of comb electrodes are formed on a piezoelectric substrate, and said high-frequency surface acoustic wave filter has:

Surface acoustic wave filter with grounds not connected in the package

The filter circuit is a filter circuit having plural passbands including a first filter having a first passband, and a second filter having a second passband, with their inputs and outputs connected mutually so that these filters are connected in parallel. Inductor elements are connected in series to the terminal of the first filter to which the second filter is connected, and capacitor elements are connected in series to the terminal of the second filter to which the first filter is connected.

Filter circuit having plural passing bands

To realizing a filter which is capable of properly controlling the passband, and the attenuation pole of a surface acoustic wave filter, a surface acoustic wave filter connected in a ladder type with the surface acoustic wave resonators 104, 105 has an element 106 which changes in capacity by voltage to be impressed and is connected in series with a resonator 105 connected in parallel to the signal line 100.

Resonator type surface acoustic wave ladder filter with voltage variable

A surface acoustic wave device is manufactured by directly or indirectly bonding a lid to a substrate having a surface acoustic wave element to seal the element under the lid. The lid is made of at least one material selected from the group comprising lithium niobate, lithium tantalete, lithium borate, glass and quartz. The substrate is made of at least one material selected from the group comprising quartz, lithium niobate, lithium tantalete and lithium borate.

Surface acoustic wave device and method of manufacturing the same

A surface acoustic wave device has a main substrate; a comb-like electrode formed on one of the main surfaces of said main substrate; and a supplementary substrate joined with the other main surface of said main substrate, wherein said supplementary substrate has a smaller thermal expansion coefficient and a larger thickness than said main substrate.

Surface acoustic wave devices and their manufacturing method

A compact, low height, low cost, and high reliability surface acoustic wave device, and its method of manufacture. The surface acoustic wave device consists of a substrate, a comb-electrode disposed on the main surface of the substrate, plural electrode pads disposed around the comb-electrode, protecting means covering the comb-electrode through a closed space produced by combining the comb-electrode and the electrode pads with the substrate by using substantially covalent bonding force acting between conductive bumps formed on the electrode bumps, a conductive adhesive layer disposed at least on the top of the conductive bumps, and a package adhered on the conductive bumps by means of the conductive adhesive, and insulation adhesive filled into the package contacting the conductive adhesive, the conductive bumps, and the protective means.

Method of manufacture of surface acoustic wave device

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Nara, Japan

Kazuo Eda