Hitachi-high-technologies Corporation

Koha Co., Ltd.

Mitsubishi Denki Kabushiki Kaisha

Vodafone Group Plc.

Waseda University

National Institute for Materials Science

Oki Electric Industry Co., Ltd.

Hitachi High-tech Corporation

Tamura Corporation

Sony Corporation

Hitachi, Ltd.

Toyoda Gosei Co., Ltd.

Kirin Beer Kabushiki Kaisha

Softbank Mobile Corp.

Kazuo Aoki

Kiyoshi Shimamura

Encarnacion Antonia Garcia Villora

Noboru Ichinose

Yukio Kaneko

Toshiro Matsumura

Kenji Obara

Chizuru Inoshita

Masahiko Kuwabara

Takehiro Hirai

Kohei Yamaguchi

Hirohiko Kitsuki

Mitsugu Sato

Masashi Sakamoto

Yuko Otani

Daisuke Inomata

Sadao Tachibana

Makoto Watanabe

Toshifumi Honda

Satoshi Takada

Seiji Isogai

Hiroaki Sano

Seitaro Yoshida

Kumi Kaneko

Akira Suzuki

Minori Noguchi

Yuji Takagi

Takashi Hiroi

Yuta Urano

Naoki Shibata

Masahiro Watanabe

Shunichi Matsumoto

Yusuke Arai

Tomonori Aoki

Naomasa Suzuki

Ryo Nakagaki

Kosuke Matsumoto

Hirohito Okuda

Yohei Minekawa

Koji Hirata

Shoichi Matsuda

Yasuhisa Ushida

Toshimi Chiba

Daisuke Shinoda

Yuhei Ikemoto

Takehiko Konno

Yoshihito Osawa

Toshinori Inoshita

Daisuke Shichinohe

Akio Kiji

Villora Encarnacion Antonia Garcia

Takashi Nobuhara

Nobuhiko Kanzaki

Seiichirou Asari

Zenzou Tozuka

Takayuki Hoshino

Daisuke Yamazaki

Yasushi Nagatomo

Yasutami Muto

Fumihiro Amino

K Kagami Memorial Lab For Materials Shimamura

Noboru School Of Science & Engineering Ichinose

A defect detection device including an illumination optical system, an image capturing optical system configured to capture an image of scattered light generated by the illumination optical system irradiating the wafer, and an image processing unit configured to process a picture of the image of the scattered light to extract a defect on the wafer. The image capturing optical system includes an objective lens, a filter unit configured to shield a part of light transmitted through the objective lens, and an imaging lens configured to form an image of light transmitted through the filter unit. The filter unit includes a first microlens array configured to condense parallel light transmitted through the objective lens, a shutter array including a light transmission unit at a focus position of the first microlens array, and a second microlens array disposed opposite to the first microlens array with respect to the shutter array.

Defect detection device, defect detection method, and defect observation apparatus including defect detection device

There is provided a charged particle beam apparatus that can reduce the processing time. A charged particle beam apparatus includes: an excitation control unit that controls a focal position by changing a control value of excitation of an electronic lens; an electrostatic field control unit that controls the focal position by changing a control value of an electrostatic field; a focal position height estimation unit that estimates a height of the focal position from the control value of the excitation of the electronic lens; and a control unit that controls the excitation control unit and the electrostatic field control unit. The control unit compares the height of the focal position estimated by the focal position height estimation unit with a height of a sample surface of a sample to be observed, and according to a result of comparison, determines whether it is necessary to change the control value of the excitation of the electronic lens before observing the sample.

Charged particle beam apparatus

A phosphor-containing member includes a transparent member, and a plurality of granular single crystal phosphors dispersed in the transparent member. Each of the plurality of granular single crystal phosphors includes a YAG crystal as a mother crystal. The plurality of granular single crystal phosphors are prepared by crushing the YAG crystal. The YAG crystal has a composition represented by a formula of YGdCeAlO(0.03&#x2264;x&#x2264;0.2, 0.003&#x2264;y&#x2264;0.2, &#x2212;0.2&#x2264;w&#x2264;0.2). Reduction of fluorescence intensity of the phosphors is less than 3% when an excitation light wavelength is 460 nm and a temperature is increased from 25&#xb0; C. to 100&#xb0; C.

Phosphor, method for manufacturing same, and light-emitting device

Provided is a defect detection device including an illumination unit including a condenser lens and a plurality of light beam synthesis units, and a detection unit detecting scattered light generated on a sample by the illumination unit. The condenser lens condenses a plurality of light beams, emitted onto the sample and having substantially the same wavelength and substantially the same polarization, on the sample. The plurality of light beam synthesis units bring the plurality of light beams close to each other and make the light beams have light paths parallel to the optical axis of the condenser lens.

Defect detection device and defect observation device

A defect observation apparatus includes a storage unit configured to store defect information about defects detected by an external inspection apparatus; a first imaging unit configured to capture an image of a defect using a first imaging condition and a second imaging condition; a control unit configured to correct positional information on the defect using the image captured with the first imaging unit; and a second imaging unit configured to capture an image of the defect based on the corrected positional information.

Defect observation apparatus

According to one embodiment of the present invention, the light emitting device includes an LED element, a side wall which surrounds the LED element, a phosphor layer which is fixed to the side wall with an adhesive layer therebetween, and is positioned above the LED element, and a metal pad as a heat dissipating member. The side wall includes an insulating base which surrounds the LED element and a metal layer which is formed on a side surface at the LED element side of the base, and is in contact with the metal pad and the adhesive layer. The adhesive layer includes a resin layer that includes a resin containing particles which have higher thermal conductivity than the resin or a layer that includes solder.

Light emitting device

The objective of the present invention is to simultaneously achieve image observations at a high resolution using an electron microscope, and X-ray analysis at a high energy-resolution using a microcalorimeter. An X-ray detector is disposed at a position where the intensity of the magnetic field from an objective lens is weaker than the critical magnetic field of a material used in a thermal insulation shield for a superconducting transition-edge sensor or a microcalorimeter. In addition, an optical system for transmitting X-rays to the detector is inserted between a sample and the detector. Alternatively, a magnetic field shield for shielding the X-ray detector is used.

Electron microscope

A light emitting element that includes a GaOsubstrate; an AlGaN buffer layer (0&#x2266;&#xd7;&#x2266;1) formed on the GaOsubstrate; an n-GaN layer formed on the AlGaN buffer layer; an p-GaN layer formed on a portion of the n-GaN layer; an n-electrode formed on a portion of the n-GaN layer; and an p-electrode formed on the p-GaN layer.

Light emitting element and method of making same

[Problem] To provide a light-emitting device which does not undergo the deterioration in luminous efficiency associated with the long-term use. [Solution] A light-emitting device () comprises a light-emitting element () which can emit blue light and a phosphor () which is composed of a single kind of single crystal and can emit yellow light upon the irradiation with the light emitted from the light-emitting element () which serves as excitation light. Thus, it becomes possible to prevent the deterioration in luminous efficiency associated with the deterioration in a binder or the like compared with a light-emitting device which utilizes multiple kinds of granular phosphors, because any binder for binding phosphors to each other is not required in the light-emitting device ().

Light-emitting device

An engine processor program, stored in a non-volatile storage regionof a storage sectionconnected to a host processorof a host section, for execution in an engine processorof an engine section, is transmitted from the host sectionto the engine section. The engine processor program received by the engine sectionis stored in a volatile storage sectionconnected to an engine processor. Then, the host sectionnotifies an execution instruction for a specified program, among the engine processor programs stored in the storage section, to the engine sectionand causes execution on the engine processor. As a result, even in a structure provided, the engine sectiondoes not need a large capacity non-volatile storage region, thereby configuring a compact mobile communication terminal.

Coordination operation method and mobile communication terminal

A light emitting element has a substrate of gallium oxides and a pn-junction formed on the substrate. The substrate is of gallium oxides represented by: (AlInGa)Owhere 0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1 and 0&#x2266;x+y&#x2266;1. The pn-junction has first conductivity type substrate, and GaN system compound semiconductor thin film of second conductivity type opposite to the first conductivity type.

A wireless communication processing decision unitacquires, from a wireless communication specific information storage unit, wireless communication specific information which specifies regions in which utilization of its frequency bandwidth is permitted by law. Next, registered position information which specifies the region in which this mobile communication terminal is position registered is acquired from a registered position information storage unit. Next, if the region specified by the registered position information is included in the regions shown by the wireless communication specific information, then the wireless communication processing decision unitmakes a decision to the effect that communication is possible, and notifies a communication processing unitof this permission of communication. Upon receipt of this communication permission, the communication processing unitstarts communication processing.

Processing decision method and mobile communication terminal

A method of growing a p-type thin film of &#x3b2;-GaOincludes preparing a substrate including a &#x3b2;-GaOsingle crystal, and growing a p-type thin film of &#x3b2;-GaOon the substrate. The p-type thin film is grown in a manner that Ga in the thin film is replaced by a p-type dopant selected from H, Li, Na, K, Rb, Cs, Fr, Be, Mg, Ca, Sr, Ba, Ra, Mn, Fe, Co, Ni, Pd, Cu, Ag, Au, Zn, Cd, Hg, Tl, and Pb.

[object Object]

A light-emitting element includes a &#x3b2;-GaOsubstrate, a GaN-based semiconductor layer formed on the &#x3b2;-GaOsubstrate, and a double-hetero light-emitting layer formed on the GaN-based semiconductor layer.

Semiconductor layer

Growing community of inventors

Tokyo, Japan

Kazuo Aoki