Kabushiki Kaisha Toshiba

Kazuo Anzai

Kazuo Shinozaki

Akihiko Tsuge

Mituo Kasori

Takeshi Takano

Hideki Sato

Hiroshi Inoue

Fumio Ueno

Nobuyuki Mizunoya

Akihiro Horiguchi

Hironori Asai

Tsuyoshi Hatano

Hiroshi Imagawa

Mitsuo Kasori

Nobuo Iwase

Noboru Sato

Kiyoshi Iyogi

Kazutaka Saitoh

Circuit substrate comprising nitride type ceramics, method for preparing

There is disclosed an aluminum sintered body prepared by sintering aluminum nitride and additives, which consists essentially of

Aluminum nitride sintered body

There are disclosed an aluminum sintered body comprising

Aluminum nitride sintered body and preparation thereof

One aspect of the present invention is directed to an aluminum nitride ceramic substrate which comprises an aluminum nitride ceramic sheet and a conductive metallized layer formed thereon. The metallized layer comprises molybdenum and/or tungsten and contains a compound containing yttria and alumina in the vicinity of the interface between the aluminum nitride ceramic sintered sheet and the conductive metallized layer.

An aluminum nitride-based sintered body having a high thermal conductivity and a total oxygen content of 0.01 to 20% by weight which is prepared by mixing a main component of aluminum nitride powder containing 0.001 to 7% by weight of oxygen with 0.01 to 15% by weight of at least one of the group consisting of a powder of a rare earth element and/or a powder of a material containing the rare earth element (said 0.01 to 15% by weight being counted on the basis of the content of the rare earth element), and sintering said powder mixture.

Aluminum nitride-based sintered body of high thermal conductivity

Disclosed are an aluminum nitride sintered body comprising aluminum nitride, rare earth element-aluminum compounds and alkaline earth metal-aluminum compounds, and a process for producing an aluminum nitride sintered body, which comprises adding to aluminum nitride powder:

Aluminum nitride sintered body and process for producing the same

An aluminum nitride sintered body prepared by a process comprising adding to a principal component of aluminum nitride an additional component of at least one of fluorides of alkaline earth metals selected from the group consisting of calcium (Ca), strontium (Sr) and barium (Ba) or at least one of fluorides of rare earth elements added in an amount of 0.01 to 20% by weight, followed by sintering.

A high thermal conductivity circuit substrate is provided comprising a sintered aluminum nitride ceramic substrate consisting essentially of one member selected from the group of yttrium, the rare earth metals and the alkali earth metals and an electrically conductive thick film paste for a conductive layer formed on the substrate.

Growing community of inventors

Tokyo, Japan

Kazuo Anzai