Denso Corporation

Nippondenso Co., Ltd.

Kazuo Akamatsu

Akira Tai

Yutaka Fukuda

Yoshihiko Isobe

Hiroyuki Yamane

Manabu Tomisaka

Tetsuo Fujii

Yuji Fukuda

Kuniaki Mamitsu

Masayoshi Nishihata

Takanori Teshima

Kenji Kondo

Takeshi Yamauchi

Atsushi Komura

Daisuke Fukuoka

Michio Kameyama

Tsuyoshi Fujiwara

Tooru Yamaoka

Terukazu Fukaya

Hidetoshi Katou

Yoshiko Fukuda

Mika Ootsuki

Ken Sakamoto

Kazuhito Katoh

A semiconductor device includes a semiconductor substrate and an electrode. The electrode is electrically connected to the semiconductor substrate and located on the semiconductor substrate. The electrode has a lower metal layer, an upper metal layer and an intermediate layer. The lower metal layer is located at a side closer to the semiconductor substrate. The upper metal layer is located above the lower metal layer. The intermediate layer is located between the lower metal layer and the upper metal layer. Each of the lower metal layer and the upper metal layer is made of aluminum or an aluminum alloy. In the aluminum alloy, an element is added to aluminum. The intermediate layer is made of material that is more difficult to react with a hydroxyl group than the lower metal layer and the upper metal layer.

Semiconductor device and method of manufacturing the same

A semiconductor device includes a first protection film for covering a first metal wiring. A second protection film is disposed on the first protection film, which is covered with a solder layer. Even if a crack is generated in the second protection film before the solder layer is formed on the second protection film, the crack is restricted from proceeding into the first protection film.

Semiconductor device having semiconductor chip and metal plate

In a method of manufacturing a semiconductor device, an electrode layer is formed on a surface of a semiconductor substrate, and a resin insulation layer is formed on the surface of the semiconductor substrate so that the electrode layer can be covered with the resin insulation layer. A tapered hole is formed in the insulation layer by using a tool bit having a rake angle of zero or a negative value. The tapered hole has an opening defined by the insulation layer, a bottom defined by the electrode layer, and a side wall connecting the opening to the bottom.

Semiconductor device and method of patterning resin insulation layer on substrate of the same

A formation method of a metallic electrode of a semiconductor device is disclosed. The method includes: acquiring data about surface shape of a surface part of a semiconductor substrate; and causing a deformation device to deform the semiconductor substrate based on the data so that a distance between a cutting plane and the surface part falls within a required accuracy in cutting amount. In deforming the semiconductor substrate, multiple actuators are used as the deformation device. A pitch of the multiple actuators is set to a value that is greater than one-half of wavelength of spatial frequency of a thickness distribution of the semiconductor substrate and that is less than or equal to the wavelength.

Formation method of metallic electrode of semiconductor device and metallic electrode formation apparatus

A method for manufacturing a semiconductor device having on a silicon substrate semiconductor elements and aluminum (Al) alloy wiring leads as electrically connected thereto is disclosed. The method includes the steps of forming on the silicon substrate an Al alloy layer containing therein copper (Cu), and forming on the Al alloy layer a titanium nitride (TiN) film with enhanced chemical reactivity by using sputtering techniques while applying thereto a DC power of 5.5 W/cmor less. Fabrication of such reactivity-rich TiN film on the Al alloy layer results in a reaction layer of Al and Ti being subdivided into several spaced-apart segments. In this case, the reaction layer hardly serves as any diffusion path; thus, it becomes possible to prevent Cu as contained in the Al alloy layer from attempting to outdiffuse with the reaction layer being as its diffusion path. This makes it possible to suppress or minimize unwanted fabrication of AlN on or above the surface of an Al containing lead pattern, thereby enabling increase in electromigration (EM) lifetime of electrical interconnect leads used.

Method of manufacturing semiconductor device

A method for manufacturing a semiconductor device having on a silicon substrate semiconductor elements and aluminum (Al) alloy wiring leads as electrically connected thereto is disclosed. The method includes the steps of forming on the silicon substrate an Al alloy layer containing therein copper (Cu), and forming on the Al alloy layer a titanium nitride (TiN) film with enhanced chemical reactivity by using sputtering techniques while applying thereto a DC power of 5.5 W/cm or less. Fabrication of such reactivity-rich TiN film on the Al alloy layer results in a reaction layer of Al and Ti being subdivided into several spaced-apart segments. In this case, the reaction layer hardly serves as any diffusion path; thus, it becomes possible to prevent Cu as contained in the Al alloy layer from attempting to outdiffuse with the reaction layer being as its diffusion path. This makes it possible to suppress or minimize unwanted fabrication of AlN on or above the surface of an Al containing lead pattern, thereby enabling increase in electromigration (EM) lifetime of electrical interconnect leads used.

Electrical wiring of semiconductor device enabling increase in electromigration (EM) lifetime

An aluminum line including nitrogen formed as a film in a semiconductor integrated circuit is disclosed. Each crystal grain size of the aluminum line is lower than or equal to 0.3 .mu.m to suppress electromigration. A method of forming the aluminum line which can supress electromigration is also disclosed. The amount of an inert gas Q and the amount of a nitrogen gas Q.sub.N are controlled to satisfy '2.ltoreq.(Q.sub.N /Q).times.100.ltoreq.10'.

Aluminum line with crystal grains

Growing community of inventors

Okazaki, Japan

Kazuo Akamatsu