Hitachi, Ltd.

Other

Kazunori Tsujimoto

Shinichi Tachi

Takao Kumihashi

Sadayuki Okudaira

Kiichiro Mukai

Keizo Suzuki

Masahito Mori

Tetsuo Ono

Naoyuki Kofuji

Naoshi Itabashi

Tatsumi Mizutani

Kenichi Mizuishi

Ken'etsu Yokogawa

Masafumi Kanetomo

Junichi Kobayashi

Shoji Shukuri

Tsunehiko Tsubone

Digh Hisamoto

Tatehito Usui

Hideyuki Matsuoka

Hiromasa Noda

Tokuo Kure

Shinichiro Kimura

Natsuki Yokoyama

Takahiro Daikoku

Kenetsu Yokogawa

Yoshinao Kawasaki

Hiroshi Kawakami

Kazuyoshi Torii

Eiji Takeda

Yoshinori Momonoi

Shigekazu Kieda

Katsuyoshi Kudo

Nobuyuki Mise

Toshiyuki Yoshimura

Minolu Soraoka

Shin Arai

Keijiro Shindo

Kenshiro Tamura

Saadyuki Okudaira

A method and apparatus for dry etching changes at least one of the effective pumping speed of a vacuum chamber and the gas flow rate to alter the processing of an etching pattern side wall of a sample between first and second conditions. The first and second conditions include the presence or absence of a deposit film, or the presence, absence or shape of a taper angle. Various parameters for controlling the first and second conditions are contemplated.

Method and apparatus for dry etching

Disclosed is a method for manufacturing a semiconductor device which efficiently carries out a process on a semiconductor substrate, such as dry etching, and cleaning for removing a foreign matter after the process. The method includes a step of removing a foreign matter by using both an electric action of a plasma generated by plasma generation means and a physical action caused by a frictional stress of a fast gas stream formed by a pad structure which is arranged close to a wafer surface.

Method for manufacturing semiconductor device

A pulse voltage of duty ratio 5% or below and repetition frequency 400 KHz or above is supplied in order to suppress the notch, charge build-up damage, subtrench and bowing due to the electron shading phenomenon. Thus, a cycle for accelerating electrons occurs in the substrate bias, so that the electron shading phenomenon does not occur.

Surface treatment method and system

A plasma processing apparatus in which power consumption is reduced, which can generate uniform plasma in a large range and in which minute processing in high etching selectivity and in high aspect ratio is enabled is disclosed. High density plasma is generated in a vacuum vessel housing a processed sample utilizing an electron cyclotron resonance phenomenon caused by an electromagnetic wave in an ultra-high frequency band and a magnetic field and the surface of the processed sample is etched using this plasma. An electromagnetic wave in an ultra-high frequency band for generating plasma is radiated from a planar conductive plate consisting of graphite or silicon which is arranged opposite to the surface of the processed sample into space inside the vacuum vessel. High density plasma in the low degree of dissociation can be generated by using an electromagnetic wave in an ultra-high frequency band and as a result, the controllability of etching reaction can be enhanced. Further, a radical effective in etching can be increased by reaction between the surface of a planar conductive plate for radiating an electromagnetic wave and plasma.

Plasma processing apparatus

Etching of an article is carried out by maintaining the article at a temperature at which the vapor pressure of etching gas molecules becomes equal to or higher than the pressure of etching gas and the vapor pressure of neutral radicals contained in a plasma becomes equal to or lower than the pressure of an etching gas. An etching pattern with a substantially vertical side profile and extremely small in dimensional shift from the mask can be formed at high precision.

Dry etching method

Method for dry etching

A dry etching method is disclosed, in which the pressure of etching gas in a reaction chamber, the bias voltage applied to article to be etched, and the temperature of the article to be etched object are set so that the etching rate for the article to be etched is greater than 0.2 .mu.m/min, a ratio of the length of side etching in the article to be etched to the depth of etching therein is less than 1/100, and a ratio of the etching rate for the article to be etched to the etching rate for a mask formed thereon is greater than 10. Thus, the dry etching method can satisfy three requirements (that is, a high etching rate, a high selection ratio and marked anisotropy in etching) at the same time, although conventional dry etching methods can satisfy only two of three requirements.

Growing community of inventors

Higashiyamato, Japan

Kazunori Tsujimoto