Jsr Corporation

Kazunori Takanashi

Takashi Mori

Hiromitsu Tanaka

Shin-ya Minegishi

Yusuke Anno

Satoshi Dei

Hirokazu Sakakibara

Taiichi Furukawa

Yoshio Takimoto

Kazunori Sakai

Hiroki Nakatsu

Shunsuke Kurita

Hiroki Nakagawa

Masayuki Motonari

Yuushi Matsumura

Tomoharu Kawazu

Masato Tanaka

Toru Kimura

Hiromitsu Nakashima

Hisashi Nakagawa

Tatsuya Sakai

Shinya Minegishi

Shin-ya Nakafuji

Tomoaki Taniguchi

Kazuo Nakahara

Goji Wakamatsu

Naoya Nosaka

Tooru Kimura

Tsubasa Abe

Kyoyu Yasuda

Yushi Matsumura

Masayuki Miyake

Tomoaki Seko

Ichihiro Miura

Hiroyuki Miyauchi

Jyunya Suzuki

Nao Okumura

A method for forming a protective film includes directly or indirectly coating only a periphery of a substrate with a composition. The composition includes a compound having an aromatic ring, and a solvent. The solvent includes a first solvent having a normal boiling point of 156° C. or higher and lower than 300° C. A content of the first solvent in the solvent is preferably 20 mass % or more and 100 mass % or less. The first solvent is preferably an ester, an alcohol, an ether, a carbonate, or a combination of two or more of an ester, an alcohol, an ether, and a carbonate.

Method for forming protective film, method for manufacturing patterned substrate, and composition

The composition contains: a compound which has a group represented by formula (1); and a solvent. In the formula (1), Rand Reach independently represent a substituted or unsubstituted aryl group having 6 to 30 ring atoms or a substituted or unsubstituted heteroaryl group having 5 to 30 ring atoms; Rrepresents a hydrogen atom or a substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1 to 10 carbon atoms; and * denotes a bonding site to a part other than the group represented by the following formula (1) in the compound.

Composition, resist underlayer film, method of forming resist underlayer film, method of producing patterned substrate, and compound

The composition contains a compound and a solvent. The compound includes a group represented by formula (1). The compound has a molecular weight of no less than 200 and has a percentage content of carbon atoms of no less than 40% by mass. In the formula (1), Rand Reach independently represent a hydrogen atom, a fluorine atom, a monovalent hydrocarbon group having 1 to 20 carbon atoms or a monovalent fluorinated hydrocarbon group having 1 to 20 carbon atoms, or Rand Rtaken together represent a part of an alicyclic structure having 3 to 20 ring atoms constituted together with the carbon atom to which Rand Rbond; Arrepresents a group obtained by removing (n+3) hydrogen atoms from an arene or heteroarene having 6 to 20 ring atoms; and X represents an oxygen atom, &#x2014;CRR&#x2014;, &#x2014;CRR&#x2014;O&#x2014; or &#x2014;O&#x2014;CRR&#x2014;. 

Composition, film, film-forming method and patterned substrate-producing method

A composition for resist underlayer film formation, includes a compound represented by formula (1) and a solvent. Arrepresents an aromatic heterocyclic group having a valency of m and having 5 to 20 ring atoms; m is an integer of 1 to 11; Aris a group bonding to a carbon atom of the aromatic heteroring in Arand represents an aromatic carbocyclic group having 6 to 20 ring atoms and having a valency of (n+1) or an aromatic heterocyclic group having 5 to 20 ring atoms and having a valency of (n+1); n is an integer of 0 to 12; and Rrepresents a monovalent organic group having 1 to 20 carbon atoms, a hydroxy group, a halogen atom, or a nitro group.ArArR))&#x2003;&#x2003;(1)

Composition for resist underlayer film formation, resist underlayer film and forming method thereof, patterned substrate-producing method, and compound

A composition for resist underlayer film formation contains: a first compound including at least one oxazine structure fused to an aromatic ring; and a solvent. The first compound preferably includes a partial structure represented by formula (1). In formula (1), Rto Reach independently represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; Arrepresents a group obtained by removing (n+3) or (n+2) hydrogen atoms on the aromatic ring from an arene having 6 to 20 carbon atoms; Rrepresents a hydroxy group, a halogen atom, a nitro group or a monovalent organic group having 1 to 20 carbon atoms; and n is an integer of 0 to 9. 

Composition for resist underlayer film formation, resist underlayer film and method for forming the same, and production method of a patterned substrate

A resist underlayer film-forming composition includes a solvent, and a compound comprising an aromatic ring. The solvent includes a first solvent having a normal boiling point of less than 156&#xb0; C., and a second solvent having a normal boiling point of no less than 156&#xb0; C. and less than 300&#xb0; C. The resist underlayer film-forming composition is for use in forming a resist underlayer film to be overlaid on a patterned substrate. A production method of a patterned substrate includes applying the resist underlayer film-forming composition on a patterned substrate to obtain a coating film on the patterned substrate. The coating film is heated to obtain a resist underlayer film. A resist pattern is formed on an upper face side of the resist underlayer film. The resist underlayer film and the substrate are etched using the resist pattern as a mask.

Resist underlayer film-forming composition, resist underlayer film, resist underlayer film-forming process, and production method of patterned substrate

An inorganic film-forming composition for multilayer resist processes includes a complex that includes: metal atoms; at least one bridging ligand; and a ligand which is other than the at least one bridging ligand and which is derived from a hydroxy acid ester, a &#x3b2;-diketone, a &#x3b2;-keto ester, a &#x3b2;-dicarboxylic acid ester or a combination thereof. The at least one bridging ligand includes a first bridging ligand derived from a compound represented by formula (1). An amount of the first bridging ligand is no less than 50 mol % with respect to a total of the bridging ligand. In the formula (1), Rrepresents an organic group having a valency of n. X represents &#x2014;OH, &#x2014;COOH, &#x2014;NCO or &#x2014;NHR, wherein Rrepresents a hydrogen atom or a monovalent organic group. n is an integer of 2 to 4.RX)&#x2003;&#x2003;(1)

Inorganic film-forming composition for multilayer resist processes, and pattern-forming method

A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.

Resist pattern-forming method

A pattern-forming method includes applying an inorganic film-forming composition on an upper face side of a substrate to provide an inorganic film, forming a resist pattern on an upper face side of the inorganic film; and dry-etching once or several times using the resist pattern as a mask such that the substrate has a pattern The inorganic film-forming composition includes a polyacid or a salt thereof, and an organic solvent. The step for forming a resist pattern may include the steps of: applying a resist composition on an upper face side of the inorganic film to provide a resist film; exposing the resist film; and developing the resist film exposed.

Pattern forming method

A pattern-forming method in which processibility of a silicon-containing film in etching with a fluorine gas and resistance against etching with an oxygen gas can be together improved in a multilayer resist process to form a finer pattern. Provided is a pattern-forming method that includes the steps of (1) providing a silicon-containing film on the upper face side of a substrate to be processed using a polysiloxane composition; (2) forming a resist pattern on the silicon-containing film; (3) dry-etching the silicon-containing film using the resist pattern as a mask to form a silicon-containing pattern; and (4) dry-etching the substrate to be processed using the silicon-containing pattern as a mask to form a pattern, in which the polysiloxane composition includes (A) a polysiloxane containing a fluorine atom, and (B) a crosslinking accelerator.

Method for forming pattern, and polysiloxane composition

A polysiloxane composition includes a polysiloxane, and a first compound. The first compound includes a nitrogen-containing heterocyclic ring structure, and a polar group, an ester group or a combination thereof. A pattern-forming method includes coating the polysiloxane composition on a substrate to be processed to provide a silicon-containing film. A resist composition is coated on the silicon-containing film to provide a resist coating film. The resist coating film is selectively irradiated with a radioactive ray through a photomask to expose the resist coating film. The exposed resist coating film is developed to form a resist pattern. The silicon-containing film and the substrate to be processed are sequentially dry etched using the resist pattern as a mask.

Polysiloxane composition and pattern-forming method

A silicon-containing film-forming composition includes a polysiloxane and organic solvent. The polysiloxane includes a first structural unit, a second structural unit, and a third structural unit. The first structural unit is derived from a tetraalkoxysilane. The second structural unit is derived from a compound shown by a formula (1), wherein Rrepresents a hydrogen atom or an electron-donating group, at least one Ris an electron-donating group, Rrepresents a monovalent organic group, and n represents 0 or 1. The third structural unit is derived from a compound shown by a formula (2), wherein Rrepresents an alkyl group having 1 to 8 carbon atoms, and Rrepresents a monovalent organic group.

Silicon-containing film-forming composition, silicon-containing film, and pattern forming method

A composition for forming a resist underlayer film includes a polysiloxane and a solvent. The solvent includes an organic solvent having a standard boiling point of no less than 150.0&#xb0; C., and water. A content of the organic solvent is no less than 1% by mass and no greater than 50% by mass with respect to a total amount of the solvent. A content of water is no less than 1% by mass and no greater than 30% by mass with respect to the total amount of the solvent.

Composition for forming resist underlayer film and pattern-forming method

A resist pattern-forming method capable of forming a resist pattern excellent in pattern collapse resistance in the case of development with the organic solvent in multilayer resist processes. The method has the steps of: (1) providing a resist underlayer film on a substrate using a composition for forming a resist underlayer film; (2) providing a resist film on the resist underlayer film using a photoresist composition; (3) exposing the resist film; and (4) developing the exposed resist film using a developer solution containing no less than 80% by mass of an organic solvent, in which the composition for forming a resist underlayer film contains (A) a component that includes a polysiloxane chain and that has a carboxyl group, a group that can generate a carboxyl group by an action of an acid, an acid anhydride group or a combination thereof.

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Tokyo, Japan

Kazunori Takanashi