Mitsubishi Denki Kabushiki Kaisha

Zeon Corporation

Mitsubishi Electric Corporation

Kazunori Taguchi

Yuzuru Konishi

Yasuo Tsunogae

Kyotaro Hirasawa

Masato Sakamoto

Kenji Oota

Masaharu Tokoro

Takeshi Nakamura

Kei Sakamoto

Katsumi Satoh

Takashi Tsutsumi

Jun Okada

Kazuhiro Morishita

Tetsuo Motomiya

Junichiro Yamashita

Seiji Okada

Yasuhiro Wakisaka

Hitomi Takeuchi

Yumi Ohsaku

Kyoutaro Hirasawa

The present invention has an object to enhance manufacturability of a pressure-contact-type semiconductor device. A pressure-contact-type semiconductor device according to the present invention includes: a semiconductor chip, the semiconductor chip including a guard ring and a gate signal input/output part in the first main surface; a first external electrode being formed on a side of the first main surface of the semiconductor chip; a conductive pattern being formed on the first external electrode; a contact pin connecting the gate signal input/output part and the conductive pattern; a plate-like electrode being provided on the second main surface of the semiconductor chip; a disc spring being provided on the plate-like electrode; and a second external electrode being provided on the disc spring, the second external electrode and the first external electrode interposing the semiconductor chip.

Pressure-contact-type semiconductor device

A method for producing a hydrogenated ring-opening metathesis polymer includes subjecting a cyclic olefin to ring-opening metathesis polymerization in the presence of a polymerization catalyst to produce a ring-opening metathesis polymer, and hydrogenating at least some of carbon-carbon double bonds of the ring-opening metathesis polymer, at least one ruthenium compound selected from a group made of a ruthenium compound represented by a formula (I), (II), (III), and (IV) being used as the polymerization catalyst; and a resin composition having a hydrogenated ring-opening metathesis polymer produced by this method. It is possible to industrially advantageously produce a hydrogenated ring-opening metathesis polymer that exhibits especially excellent light transmittance.

Method for producing ring-opening metathesis polymer hydride, and resin composition

A pressure contact semiconductor device includes a cathode post electrode and a gate electrode formed on a top surface of a substrate, an anode post electrode formed on a bottom surface thereof, a circuit substrate, a cathode flange overlapping the cathode post electrode and connected to the circuit substrate, a cathode fin electrode overlapping the cathode flange, an anode fin electrode underlapping and the anode post electrode, a gate flange connected to both the gate electrode and the circuit substrate, a securing member having a parallel portion parallel to the circuit substrate and a perpendicular portion perpendicular to the circuit substrate, the perpendicular portion being secured to a side of the cathode fin electrode, and a spacer formed from plate material and secured at the top to the parallel portion of the securing member and at the bottom to the circuit substrate.

Pressure contact semiconductor device

A pressure-contact semiconductor device () includes thermal buffer plates () and main electrode blocks () having flanges (), by which semiconductor substrate () having a pair of electrodes is sandwiched, disposed opposed to each side thereof, wherein the semiconductor substrate () is sealed in a gastight space by joining the flanges () to insulating container (). The semiconductor device () is configured such that the outermost periphery of the semiconductor substrate () is enclosed by hollow cylindrical insulator () fitted on outer peripheries of the main electrode blocks () in the gastight space with O-rings () fitted between the main electrode blocks () and the cylindrical insulator (), and sealed with reaction force from the O-rings ().

Pressure-contact semiconductor device

A norbornene ring-opened polymer which in the molecule has repeating units represented by the formula (1):wherein Rrepresents Q, Rrepresents Q or C(&#x2550;O)R, Rrepresents Q or C(&#x2550;O)R, and Rrepresents Q or X&#x2014;C(&#x2550;O)R(wherein Q represents hydrogen, a Chydrocarbon group, etc.; R, Rand Reach represents hydroxyl, Calkoxyl, etc., provided that Rand Rmay be bonded to each other to constitute oxygen, NH, etc.; X represents methylene, etc., provided that when Ris Q, then Ris C(&#x2550;O)Rand Ris X&#x2014;C(&#x2550;O)Rand that when Ris Q, then Ris C(&#x2550;O)R, Ris C(&#x2550;O)R, and the configuration of Rand Ris trans, and m is 0 or 1), the polymer having a weight-average molecular weight as determined by gel permeation chromatography of 1,000 to 1,000,000. Also provided is a hydrogenation product of the norbornene ring-opened polymer. The norbornene ring-opened polymer and the hydrogenation product are excellent in heat resistance, electrical properties, etc.

Norbornene-based ring-opening polymerization polymer, product of hydrogenation of norbornene-based ring-opening polymerization polymer, and processes for producing these

A ring-opened metathesis copolymer and its hydrogenated product having a desired monomer unit ratio and a high molecular weight and having hydroxyl groups or hydroxycarbonyl groups can be obtained by conducting a ring-opening metathesis copolymerization of a norbornene-type monomer having hydroxyl groups or hydroxycarbonyl groups with an unsubstituted norbornene-type monomer having at least three rings in the presence of a catalyst predominantly comprised of an organic ruthenium compound having coordinated therewith a neutral electron-donating ligand, and, if desired, hydrogenating the resulting copolymer. The thus-obtained ring-opened metathesis copolymer and its hydrogenation product are characterized by having a low water absorption, good adhesion to metal and other materials, good compatibility with a curing agent and other compounds, and high heat resistance, and exhibiting reduced signal retardation and signal noise.

Open-ring copolymer, hydrogenated open-ring copolymer, process for production of both, and compositions

A process for producing a hydrogenated product of a polymer prepared through ring-opening polymerization which comprises a polymerization step of polymerizing a cyclic olefin through ring-opening polymerization in the presence of a polymerization catalyst comprising an organoruthenium compound or an organoosmium compound to prepare a polymer, and a hydrogenation step of adding a hydrogenation catalyst and hydrogen into a polymerization system resulting from the polymerization step to hydrogenate the carbon-carbon double bonds of the polymer prepared through the ring-opening polymerization. When the organoruthenium compound- or organoosmium compound-containing catalyst further comprises a carbene compound, the catalyst exhibits a higher activity for the ring-opening polymerization.

Process for producing hydrogenated product of cyclic olefin polymer prepared through ring-opening polymerization

A semiconductor device has a semiconductor element housed in a ceramic cylinder as an insulated vessel, and plural gate terminals. Plural through-holes are formed in the ceramic cylinder. Leads connected to gate terminals pass through their respective through-holes. The leads are connected to internal gate terminals (electrodes). Each internal gate terminal is provided for each lead and connected electrically to a gate electrode of the semiconductor element.

Insulated high speed semiconductor switching device

A semiconductor device having a supporting member that reduces a resonance phenomenon. A pair of reinforcing members is fixed on a gate drive substrate with spacers interposed there between and upright portions of the pair of reinforcing members are fastened with screws on a side wall of a cathode flange. A spacer is fixed on the gate drive substrate and a projection of the spacer is inserted in an engaging member fixed on the bottom of the cathode fin electrode and thus fixed on the bottom of the cathode fin electrode. The pair of upright portions as the first and second supporting points and the projection of the spacer as the third supporting point stably support the gate drive substrate on the cathode fin electrode without freedom of rotation at the three positions arranged to surround an opening.

Semiconductor device with multiple supporting points

Process for producing hydrogenated ring-opening polymerization polymer of cycloolefin

A first cathode flange ( ) provided with branch-like protrusions ( ) extending towards substantially its outer periphery and a gate flange ( ) provided with branch-like protrusions ( ) extending towards substantially its outer periphery are connected to a cathode electrode ( ) and a gate electrode ( ), respectively, formed on one surface of a gate drive substrate ( ). With this structure, a gate commutated turn-off semiconductor device which eliminates the necessity of a gate spacer and a cathode spacer and allows reduction in time and cost required for manufacture can be achieved.

Gate commutated turn-off semiconductor device

It is an object of the present invention to fix a semiconductor substrate and a thermal compensating plate in the alloy-free structure. An insulation resin (23) for side wall protection fixed on the outer periphery of a semiconductor substrate (1) and a projection (6a) inside an insulation tube are bonded with an adhesive agent (24) to restrict movements of the semiconductor substrate (1) in the radial direction. A thermal compensating plate (3) and a main electrode (5) are normally positioned with each other by a screw pin (32). A fixing ring (30) having resin or metal such as aluminum or the like which fits to the outer peripheral side of the main electrode (4) and the outer peripheral side of the thermal compensating plate (2) and the edge part of the upper main surface thereof restricts movement of the thermal compensating plate (2) in the radial direction. Further, a spring (31) interposed between a flange portion (4c) of the main electrode (4) and the fixing ring (30) presses and energizes the thermal compensating plates (2, 3) and the semiconductor substrate (1) against the main electrode (5). Since the free movements of the semiconductor substrate and the thermal compensating plates is restricted, the semiconductor substrate can be prevented from damage.

Semiconductor device

A compression bonded type semiconductor element having a ring-shaped gate terminal in the form of an annular metal disk projecting through the side of an insulating cylinder. The ring-shaped gate terminal includes an inner circumferential planar portion which is disposed so as to be slidable on an annular ring gate electrode. The annular ring gate electrode is in contact with a gate electrode formed on a semiconductor substrate, and the ring gate electrode is pressed against the gate electrode via the ring-shaped gate terminal by an elastic body.

Compression bonded type semiconductor element and semiconductor device

A light trigger thyristor including a light guide (30) held in a receiving metal fitting (11) with a light entering end side of the light guide (30) inserted into one end of a cylindrical sleeve (15). A plano-convex lens (17) is inserted into the other end of the cylindrical sleeve (15) to face a light introducing window (LW). A connector terminal (12) to which step index optical fibers (131, 132) are connected is attached to the metal receiving fitting (11). The light triggering thyristor prevents light from leaking out a bending portion of the light guide (30) to increase the transmission efficiency of light signals, prevents breakdown of the thyristor element due to concentration of the light signals even when light signals entering the light guide (30) are provided through a plurality of optical fibers from a plurality of light sources, and decreases optical loss due to misalignment of the optical axis of the optical transmission system without requiring very accurate adjustment to the relative position of the optical fibers (131, 132) and the light guide (30).

Light trigger thyristor

An alloy-free pressure contact type semiconductor device maintains a high reliability during transportation even without a pressure contact tool such as a simplified stack and therefore does not require a high transportation cost. Through holes (H1) and (H2) each having a circular cross section are formed in distortion buffer plates (21A) and (21K) at the center. A first and a second bottomed holes (i.e., recesses) (N1) and (N2) are formed in an anode electrode plate (41A) and a cathode electrode plate (41K). From the through hole (H1) up to the first bottomed hole (N1), a pressure contact pin (9) biased by a coil spring (8) is disposed. From the through hole (H2) down to the second bottomed hole (N2), a fixing pin (90) is disposed. Without applying external pressure upon the device, it is possible to prevent displacement of the first and the second distortion buffer plates due to vibration or impact during transportation and damage to a semiconductor body. Therefore, a transportation cost is low and the reliability of the device is high.

Growing community of inventors

Tokyo, Japan

Kazunori Taguchi