Tokyo Electron Limited

Kazunori Sakamoto

Satoshi Kaneko

Kazuki Motomatsu

Akira Murata

A substrate processing apparatus can suppress particle generation on a substrate, and can reduce a consumption amount of a processing liquid. A substrate processing apparatusincludes a processing chamberhaving a processing spacein which a substrate W is processed; a vaporizing tank, configured to store the processing liquid therein, having a vaporization spacein which the stored processing liquid is allowed to be vaporized; a decompression driving unitconfigured to decompress the vaporization space; and a control unit. The control unitvaporizes the processing liquid into the processing gas by decompressing the vaporization spacewithout through the processing space, and then, vaporizes the processing liquid into the processing gas by decompressing the vaporization spacethrough the processing space, and supplies an inert gas into the vaporization space

Substrate processing apparatus, substrate processing method and recording medium

A substrate liquid processing apparatusincludes a substrate holding unitconfigured to hold a substrate W; a processing liquid supply unitconfigured to supply a processing liquid Lonto a top surface of the substrate W held by the substrate holding unit; and a cover bodyconfigured to cover the substrate W. Here, the cover bodyincludes a ceiling unitdisposed above the substrate W, a sidewall unitdownwardly extended from the ceiling unit, and a heating unitprovided at the ceiling unitand configured to heat the processing liquid Lon the substrate W. The sidewall unitof the cover bodyis placed at an outer periphery side of the substrate W when the processing liquid Lon the substrate W is heated.

Substrate liquid processing apparatus, substrate liquid processing method and recording medium

A substrate entire region treatment process of discharging a processing fluid of a temperature different from a surface temperature of a substratefrom a first nozzletoward the substrate is performed while moving the first nozzle toward an outer side from an entire region treatment start position Plocated at a central portion to an entire region treatment end position Plocated at a peripheral portion. Then, after moving the first nozzle toward an inner side to a peripheral region treatment start position Plocated at an outer position than the entire region treatment start position P, a substrate peripheral region treatment process of discharging the processing fluid from the first nozzle toward the substrate is performed while moving the first nozzle toward the outer side from the peripheral region treatment start position Pto a peripheral region treatment stop position Plocated at a peripheral portion.

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Koshi, Japan

Kazunori Sakamoto