Nitto-denko Corporation

Hitachi Maxell, Limited

Kazunori Kawamura

Seiki Teraji

Hiroto Nishii

Taichi Watanabe

Yusuke Yamamoto

Kazuaki Sasa

Keiko Toyozawa

Tomohiko Maeda

Shuuji Yano

Toshimitsu Tachibana

Masakatsu Urairi

Hiroyuki Iida

Kenji Matsumoto

Osamu Ishida

Takashi Minemoto

Toshihiko Shinomura

Jakapan Chantana

A compound solar cell having a higher conversion efficiency and a method for producing the compound solar cell at lower costs are provided. The compound solar cell includes a CIGS light absorbing layer, a buffer layer and a front side electrode layer provided on a substrate. An interface layer made of a mixed crystal compound having a composition represented by the following general formula is provided between the CIGS light absorbing layer and the buffer layer: Zn(O,S) . . . (1), wherein X is 0.9&#x3c;X&#x2264;1.

Compound solar cell and production method therefor

In order to provide a CIGS compound solar cell with a high conversion efficiency, a CIGS compound solar cell including a rear electrode layer, a CIGS light absorbing layer, a buffer layer, and a transparent electrode layer in this order over a substrate is configured such that the buffer layer comprises a mixed crystal of a Group IIa metal and zinc oxide, and characteristics of the mixed crystal as shown by X-ray diffraction satisfy the following formula (1):0.5&#x2264;/()&#x3c;1&#x2003;&#x2003;(1)(where none of A, B, C are 0)

CIGS compound solar cell

The present invention provides a CIGS film substantially free from oxidation of a front surface thereof and a CIGS solar cell employing the CIGS film and substantially free from reduction and variation in conversion efficiency. The CIGS film, which is used as a light absorbing layer for the CIGS solar cell, includes: a first region having a Ga/(In+Ga) ratio progressively reduced along its thickness toward a predetermined first thickness position from a back surface of the CIGS film; a second region having a Ga/(In+Ga) ratio progressively increased along its thickness toward a predetermined second thickness position from the first region; and a third region provided on the second region and having a Ga/(In+Ga) ratio progressively reduced along its thickness toward the front surface of the CIGS film.

CIGS film, and CIGS solar cell employing the same

A CIGS type compound solar cell excellent in both productivity and conversion efficiency is provided. The CIGS type solar cell includes a CIGS light absorbing layer, a buffer layer and a transparent electrode layer provided in this order on a substrate. The buffer layer is made of a mixed crystal compound containing ZnO, MgO and ZnS being present at specific ranges respectively.

CIGS type compound solar cell

A transparent conductive laminate having a completely crystallized, transparent conductive layer on a substrate comprising an organic polymer molding, and a process for producing the same. The transparent conductive layer is excellent in transparency and wet heat confidence and is not excessively low in specific resistivity. The transparent conductive laminate includes a substrate comprising an organic polymer molding having formed thereon a completely crystallized, transparent conductive layer comprising an In.Sn composite oxide having an amount of Sn atom of 1 to 6% by weight based on the total weight of In atom and Sn atom and having a film thickness of 15 to 50 nm, a Hall mobility of 30 to 45 cm/V&#xb7;S, and a carrier density of from 2&#xd7;10/cmto 6&#xd7;10/cm.

Transparent conductive laminate and process of producing the same

A transparent conductive laminate having a completely crystallized, transparent conductive layer on a substrate comprising an organic polymer molding, and a process for producing the same. The transparent conductive layer is excellent in transparency and wet heat confidence and is not excessively low in specific resistivity. The transparent conductive laminate includes a substrate comprising an organic polymer molding having formed thereon a completely crystallized, transparent conductive layer comprising an In&#x2014;Sn composite oxide having an amount of Sn atom of 1 to 6% by weight based on the total weight of In atom and Sn atom and having a film thickness of 15 to 50 nm, a Hall mobility of 30 to 45 cm/V-S, and a carrier density of from 2&#xd7;10/cmto 6&#xd7;10/cm.

An alkaline secondary battery comprising a negative comprising cadmium, zinc or iron or an oxide or thereof or a hydrogen absorbing alloy, a positive electrode comprising a metal oxide or a metal hydroxide, and a separator, which are all impregnated with an electrolyte comprising an alkaline aqueous solution is disclosed, wherein the separator is made of a polyolefin fiber sheet which has a wicking rate of pure water of at least 10 mm per 2 minutes when one end of the sheet is dipped in pure water at 20.degree. C. and 60% RH. Since the separator is chemically stable and exhibits sufficient hydrophilic properties, the battery retains a high electrode utilization even at a high rate discharging and has a practically sufficient cycle life.

Growing community of inventors

Ibaraki, Japan

Kazunori Kawamura