Nippon Steel Corporation

Nsc Electron Corporation

Kazunori Ishizaka

Masaharu Tachimori

Hideo Araki

A silicon wafer comprising a substrate of single crystal silicon, a silicon oxide film 1 to 8 .ANG. in thickness formed on one surface of said substrate, and a polysilicon layer formed on said silicon oxide film and possessing an excellent gettering ability, is prepared by oxidizing single crystal silicon, thereby forming a silicon oxide film 1 to 8 .ANG. in thickness on said surface, and exposing said silicon oxide film to a gaseous silane at an elevated temperature, thereby forming a polysilicon layer on said silicon oxide film.

Growing community of inventors

Hikari, Japan

Kazunori Ishizaka