Murata Manufacturing Co., Ltd.

Kazunori Inoue

Sho Nagatomo

Ventsislav Yantchev

Tetsuya Kimura

Koichiro Kawasaki

Masahiro Fukushima

Hidefumi Nakanishi

Shintaro Otsuka

Masakazu Atarashi

Naohiro Nodake

Yuta Ishii

Yasuyuki Toyota

Katsumi Suzuki

An acoustic wave device includes a piezoelectric film and an IDT electrode on the piezoelectric film. The IDT electrode includes first and second busbars, at least one first electrode finger, and at least one second electrode finger. When an overlap region is defined as a region in which the first and second electrode fingers overlap each other in an acoustic wave propagation direction, points A, B, C, and D, defined as follows, are all outside the cavity when, at the points A, B, C, and D, xa>about 25 μm, ya>about 25 μm, xb>about 25 μm, yb>about 25 μm, xc>about 25 μm, yc>about 25 μm, xd>about 25 μm, and yd>about 25 μm.

Acoustic wave device

An acoustic wave device includes a support substrate, a piezoelectric layer, and a functional electrode. As seen in a first direction of the support substrate, the piezoelectric layer overlaps the support substrate. The functional electrode extends over a first major surface of the piezoelectric layer. A space is opposite to the first major surface of the piezoelectric layer and at or adjacent to a second major surface of the piezoelectric layer. In the first direction, the functional electrode extends over an overlap region that overlaps the space, and a non-overlap region that does not overlap the space. In the non-overlap region, at least one of an insulating film and a void is located between the functional electrode and the piezoelectric layer.

An acoustic wave device includes a support including a support substrate with a thickness in a first direction, a piezoelectric layer on the support in the first direction, and resonators each including a functional electrode on the piezoelectric layer in the first direction. The support includes first and second space portions at positions where the respective resonators at least partially overlap in plan view in the first direction, the second space portion with an area larger than an area of the first space portion in plan view in the first direction. The piezoelectric layer includes first and second through-holes respectively communicating with the first and second space portions, and the first through-hole has an area larger than an area of the second through-hole in plan view in the first direction.

An acoustic wave device includes a support, a piezoelectric layer, an IDT electrode including first and second busbars and first and second electrode fingers, and a first insulating film on the piezoelectric layer and that covers tip end portions of the second electrode fingers. In a multilayer body including the support and the piezoelectric layer, a cavity is provided on a side of the support with respect to the piezoelectric layer. In plan view, an outer peripheral edge of the cavity includes first and second outer peripheral edge portions facing each other in an electrode-finger extending direction. The first outer peripheral edge portion is on a side of the first busbar, and the first insulating film extends on the side of the first busbar, and, in plan view, overlaps the first outer peripheral edge portion of the cavity.

Acoustic resonator devices and filters are disclosed. An acoustic resonator includes a substrate having a surface. A back surface of a single-crystal piezoelectric plate is attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm spanning a cavity in the substrate. An interdigital transducer (IDT) is formed on a front surface of the piezoelectric plate with interleaved IDT fingers of the IDT disposed on the diaphragm. Back-side fingers are formed the back surface of the diaphragm.

Transversely-excited film bulk acoustic resonator with symmetric diaphragm

An electronic component includes a substrate, a functional element on the substrate, a first electrode, a support body that is made of an insulator, a cover portion, a second electrode, and a projection. The first electrode is located on the substrate and connected to the functional element. The support body protrudes from the substrate and covers the first electrode. The cover portion opposes the substrate, and a hollow space is defined by the substrate, the support body, and the cover portion. The second electrode is located in a via hole extending through the support body and the cover portion and electrically connected to the first electrode. The projection is located on the first electrode in the via hole.

Electronic component and method of manufacturing electronic component

An electronic component includes a substrate, a functional element on the substrate, a support body, a covering portion, and a protective layer covering the covering portion. The support body is provided on the substrate and around a region in which the functional element is located. The covering portion faces the substrate and is supported by the support body. The substrate, the support body, and the covering portion define a hollow space. The functional element is located in the hollow space. In the support body, a surface opposite to a surface facing the substrate is a first surface, and a portion of the protective layer is in contact with the first surface of the support body without the covering portion being interposed.

Electronic component including protective layer

An elastic wave device includes a piezoelectric film laminated on a first main surface of a support substrate including a recessed portion open to a first main surface. A cavity portion including the recessed portion is defined by the support substrate and the piezoelectric film. An electrode is on the piezoelectric film. The electrode includes first and second bus bars, a first electrode finger connected to the first bus bar, and a second electrode finger connected to the second bus bar. The first and second bus bars include corner portions inside the cavity portion when viewed in plan view. A curved portion as a pressure relaxation portion to relax pressure on the piezoelectric film at at least one of the corner portions of the first and second bus bars is provided between the corner portion and an outer edge of the cavity portion.

Elastic wave device

Acoustic resonator devices and filters are disclosed. An acoustic resonator includes a substrate having a surface. A back surface of a single-crystal piezoelectric plate is attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm spanning a cavity in the substrate. An interdigital transducer (IDT) is formed on a front surface of the piezoelectric plate with interleaved IDT fingers of the IDT disposed on the diaphragm. Back-side fingers are formed the back surface of the diaphragm. A pitch of the IDT fingers and a pitch of the back-side fingers are substantially equal.

An acoustic wave device includes a substrate, a functional element provided on the substrate, a cover layer provided on or above the substrate to cover the functional element, and a protection layer that covers the cover layer. The cover layer includes a curved portion that is curved to protrude outward. A hollow space is defined between the curved portion and the substrate, and the functional element is provided in the hollow space. The acoustic wave device also includes a conductive portion that is provided between the curved portion and the protection layer and extends along a surface of the curved portion.

Acoustic wave device and acoustic wave module

A through-hole that extends from an upper surface of a cover opposite a support to a lower surface of the support facing a substrate is provided in the support and the cover. The through-hole overlaps a portion of a wiring line in a plan view. An acoustic wave device further includes an electrode film that is electrically connected to the wiring line in the through-hole, and a protective layer that includes an insulating material and that covers a portion of the electrode film. The protective layer is connected to the cover and the support in the through-hole. Differences in thermal expansion coefficients between the protective layer and the cover and between the protective layer and the support are smaller than a difference in thermal expansion coefficients between the protective layer and the electrode film.

Growing community of inventors

Nagaokakyo, Japan

Kazunori Inoue