Rohm Co., Ltd.

Kazunori Fuji

Masatoshi Aketa

Nobuyuki Nakamura

Xiaopeng Wu

A semiconductor device includes an insulating layer, a semiconductor element, a wiring layer and a sealing resin. The insulating layer includes obverse and reverse surfaces spaced apart in a thickness direction, and a penetrated part extending in the thickness direction. The semiconductor element, in contact with the obverse surface, includes an electrode corresponding to the penetrated part. The wiring layer includes connecting and main parts, where the connecting part is in the penetrated part and contacts the electrode, and the main part is connected to the connecting part on the reverse surface. The sealing resin, contacting the obverse surface, covers the semiconductor element. The electrode has a connecting surface facing the connecting part and including a first region exposed from the insulating layer through the penetrated part and a second region contacting the insulating layer. The first region has a greater surface roughness than the second region.

Semiconductor device and method for manufacturing semiconductor device

A semiconductor device Adisclosed includes: a semiconductor elementhaving an element obverse face and element reverse face that face oppositely in a thickness direction z, with an obverse-face electrode(first electrode) and a reverse-face electroderespectively formed on the element obverse face and the element reverse face; a conductive memberA opposing the element reverse face and conductively bonded to the reverse-face electrode; a conductive memberB spaced apart from the conductive memberA and electrically connected to the obverse-face electrode; and a lead memberhaving a lead obverse facefacing in the same direction as the element obverse face and connecting the obverse-face electrodeand the conductive memberB. The lead member, bonded to the obverse-face electrodevia a lead bonding layer, includes a protrusionprotruding in the thickness direction z from the lead obverse face. The protrusionoverlaps with the obverse-face electrodeas viewed in the thickness direction z. This configuration suppresses deformation of the connecting member to be pressed during sintering treatment.

An electronic device Aof the present disclosure includes an electronic component, a support member (die pad portionof a lead frame) including a mount surface (obverse surface) carrying the electronic component, and a bonding materialprovided between the electronic componentand the support member (die pad portion) for fixing the electronic componentto the support member (die pad portion). The mount surface (obverse surface) includes a first regionwhere a plurality of groovesare formed and a second regionthat surrounds the first regionas viewed in the z direction. The bonding materialis in contact with the first region, and is not in contact with the second region. This configuration serves to achieve an improvement in the reliability of the electronic device.

Electronic device and method for manufacturing electronic device

A semiconductor device includes an insulating layer, conductors, a semiconductor element and a sealing resin. The insulating layer has first and second surfaces opposite to each other in the thickness direction. Each conductor has an embedded part whose portion is embedded in the insulating layer and a redistribution part disposed at the second surface and connected to the embedded part. The semiconductor element has electrodes provided near the first surface and connected the embedded parts of the conductors. The semiconductor element is in contact with the first surface. The sealing resin partially covers the semiconductor element and is in contact with the first surface. The redistribution parts include portions outside the semiconductor element as viewed in the thickness direction. The insulating layer has grooves recessed from the second surface in the thickness direction. The redistribution parts are in contact with the grooves.

Semiconductor device and manufacturing method for semiconductor device

A joint structure includes a first and a second metal member overlapping with each other as viewed in a first direction. The first metal member and the second metal member are joined together. The joint structure includes a welded portion at which the first metal member and the second metal member, overlapping with each other, are partly fused to each other. The welded portion has an outer circumferential edge and a plurality of linear marks. The outer circumferential edge is annular as viewed in the first direction. The plurality of linear marks each extend from an inside of the welded portion toward the outer circumferential edge as viewed in the first direction. Each of the plurality of linear marks is curved to bulge to one sense of an annular direction along the outer circumferential edge.

Joint structure, semiconductor device, and joining method

A method for manufacturing a semiconductor device includes a step of preparing a semiconductor wafer source which includes a first main surface on one side, a second main surface on the other side and a side wall connecting the first main surface and the second main surface, an element forming step of setting a plurality of element forming regions on the first main surface of the semiconductor wafer source, and forming a semiconductor element at each of the plurality of element forming regions, and a wafer source separating step of cutting the semiconductor wafer source from a thickness direction intermediate portion along a horizontal direction parallel to the first main surface, and separating the semiconductor wafer source into an element formation wafer and an element non-formation wafer after the element forming step.

Semiconductor device manufacturing method and wafer-attached structure

Semiconductor device Aof the disclosure includes: semiconductor elementhaving element obverse surfaceand element reverse surfacespaced apart from each other in z direction (first direction) with first regionformed on the element obverse surface; metal plate(electrode member) disposed on the element obverse surfaceand electrically connected to the first region; electrically conductive substrateA (first conductive member) disposed to face the element reverse surfaceand bonded to the semiconductor element; electrically conductive substrateB (second conductive member) spaced apart from the conductive substrateA (first conductive member); and lead member(connecting member) electrically connecting the metal plate(electrode member) and the conductive substrateB (second conductive member). The lead member(connecting member) is bonded to the metal plate(electrode member) by laser welding. The semiconductor device of this configuration provides improved reliability.

Semiconductor device and bonding method

A semiconductor device includes a semiconductor element (), an input lead, and first drive leads () connecting a source electrode of the semiconductor element () to the input lead. The first drive leads () are formed of a thin metal plate that is belt-shaped as viewed in a thickness-wise direction (Z). The first drive leads () include at least a metal plate (A) connected to the semiconductor element () and a metal plate (B) stacked on the metal plate (A). The metal plate (A) includes a first connector (A) connected to the semiconductor element (). The metal plate (B) includes a first connector (B) connected to the first connector (A). The first connectors (A,B) are stacked in the thickness-wise direction (Z).

Semiconductor device and production method for semiconductor device

A package structure includes a metal member and a resin member. The metal member has an obverse surface facing one side in a first direction. The resin member is disposed in contact with at least a portion of the obverse surface. The obverse surface has a roughened area. The roughened area includes a plurality of first trenches recessed from the obverse surface, each of the first trenches having a surface with a greater roughness than the obverse surface. The plurality of first trenches extend in a second direction perpendicular to the first direction and are next to each other in a third direction perpendicular to the first direction and the second direction. The plurality of first trenches are filled up with the resin member.

Package structure, semiconductor device, and formation method for package structure

An apparatus is provided for making molded photointerrupters by using first and second leadframes. The first leadframe carries a plurality of light emitting devices, whereas the second leadframe carries a plurality of light receiving devices. The apparatus includes a molding unit which includes: a lower mold member which supports the first leadframe in a horizontal posture; an upper mold member movable vertically toward and away from the lower mold member; and a pair of side mold members movable laterally toward and away from each other between the upper and lower mold members, one of the respective side mold members supporting the second leadframe in a horizontal posture; wherein the respective mold members forms molding cavities when the mold is closed.

Method and apparatus for making molded photointerrupters

A method is provided for making molded photointerrupters by using first and second leadframes. The first leadframe carries a plurality of light emitting devices, whereas the second leadframe carries a plurality of light receiving devices. The apparatus used includes a molding unit which includes: a lower mold member which supports the first leadframe in a horizontal posture; an upper mold member movable vertically toward and away from the lower mold member; and a pair of side mold members movable laterally toward and away from each other between the upper and lower mold members, one of the respective side mold members supporting the second leadframe in a horizontal posture; wherein the respective mold members forms molding cavities when the mold is closed.

Growing community of inventors

Kyoto, Japan

Kazunori Fuji