Sony Corporation

Renesas Electronics Corporation

Renesas Technology Corp.

Mitsubishi Denki Kabushiki Kaisha

Sony Semiconductor Solutions Corporation

Kazunobu Ota

Hirokazu Sayama

Hidekazu Oda

Takeshi Yanagita

Itaru Oshiyama

Atsuhiko Yamamoto

Harumi Ikeda

Takayuki Enomoto

Shinichiro Izawa

Keiji Mabuchi

Takashi Abe

Ryoji Suzuki

Hiroyuki Mori

Fumihiko Koga

Yoshiharu Kudoh

Yorito Sakano

Masayoshi Shirahata

Masashi Kitazawa

Shigenobu Maeda

Toshiaki Iwamatsu

Takuji Matsumoto

Takuya Sano

Yasushi Tateshita

Ryusei Naito

Tomoyuki Hirano

Shuji Manda

Junpei Yamamoto

Kohei Sugihara

Tsukasa Miura

Takahashi Hayashi

Image quality is improved. In an image pickup element, an interval between adjacent light receiving elements on a light receiving surface is changed depending on a position on the light receiving surface. Further, the image pickup element is manufactured by a method of manufacturing the image pickup element including layering photodiodes by repeatedly performing a silicon epitaxial process and an ion injection process. Further, the image pickup element is manufactured by the method of manufacturing the image pickup element including changing an interval between the photodiodes adjacent on the light receiving surface of the image pickup element in each layer depending on a position on the light receiving surface in addition to the layering thereof.

Image pickup element, image pickup apparatus, and method of manufacturing image pickup element

In an image pickup element, an interval between adjacent light receiving elements on a light receiving surface is changed depending on a position on the light receiving surface. Further, the image pickup element is manufactured by a method of manufacturing the image pickup element including layering photodiodes by repeatedly performing a silicon epitaxial process and an ion injection process. Further, the image pickup element is manufactured by the method of manufacturing the image pickup element including changing an interval between the photodiodes adjacent on the light receiving surface of the image pickup element in each layer depending on a position on the light receiving surface in addition to the layering thereof.

The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate and multiple photoelectric converters that are formed on the substrate, an insulating film forms an embedded element separating unit. The element separating unit is configured of an insulating film having a fixed charge that is formed so as to coat the inner wall face of a groove portion, within the groove portion which is formed in the depth direction from the light input side of the substrate.

Solid-state imaging device, manufacturing method of solid-state imaging device, and electronic device

The present disclosure relates to a solid-state image sensing device capable of restricting an occurrence of a dark current and a method for manufacturing the same, and an electronic device. A solid-state image sensing device includes a FD part formed on a P-type semiconductor substrate by implanting an N-type impurity, a high-dielectric insulative film laminated on at least the FD part, and a contact electrode connected to the FD part in a connection structure via the high-dielectric insulative film. For example, the high-dielectric insulative film is formed by use of a material which reduces the schottky barrier height in a connection part between the FD part and the electrode in a single layer or in a plurality of layers. The present technology is applicable to CMOS image sensors, for example.

Solid-state image sensing device and method for manufacturing the same, and electronic device

A solid-state imaging device is provided, which includes a photodiode having a first conductivity type semiconductor area that is dividedly formed for each pixel; a first conductivity type transfer gate electrode formed on the semiconductor substrate via a gate insulating layer in an area neighboring the photodiode, and transmitting signal charges generated and accumulated in the photodiode; a signal reading unit reading a voltage which corresponds to the signal charge or the signal charge; and an inversion layer induction electrode formed on the semiconductor substrate via the gate insulating layer in an area covering a portion or the whole of the photodiode, and composed of a conductor or a semiconductor having a work function. An inversion layer is induced, which is formed by accumulating a second conductivity type carrier on a surface of the inversion layer induction electrode side of the semiconductor area through the inversion layer induction electrode.

Solid-state imaging device, manufacturing method thereof, camera, and electronic device

The present technology relates to a solid-state imaging device, a manufacturing method of a solid-state imaging device, and an electronic device, in which degradation of transfer characteristics of a photo diode can be suppressed. A floating diffusion is formed to reach the same depth as a layer of a photo diode formed on a silicon substrate, and a transfer transistor gate is formed therebetween. A channel that is opened/closed by control of the transfer transistor gate is formed in the silicon substrate formed with the photo diode. With this configuration, charge accumulated in the photo diode can be transferred to the floating diffusion in a vertical direction relative to the depth direction, and degradation of transfer characteristics caused by elimination of the transfer channel can be suppressed by setting the transfer channel in the depth direction. The present technology can be applied to a solid-state imaging device.

The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrateand multiple photoelectric convertersthat are formed on the substrate, an insulating filmforms an embedded element separating unit. The element separating unitis configured of an insulating filmhaving a fixed charge that is formed so as to coat the inner wall face of a groove portion, within the groove portionwhich is formed in the depth direction from the light input side of the substrate

A method of manufacturing a semiconductor device with NMOS and PMOS transistors is provided. The semiconductor device can lessen a short channel effect, can reduce gate-drain current leakage, and can reduce parasitic capacitance due to gate overlaps, thereby inhibiting a reduction in the operating speed of circuits. An N-type impurity such as arsenic is ion implanted to a relatively low concentration in the surface of a silicon substrate () in a low-voltage NMOS region (LNR) thereby to form extension layers (). Then, a silicon oxide film (OX) is formed to cover the whole surface of the silicon substrate (). The silicon oxide film (OX) on the side surfaces of gate electrodes (-) is used as an offset sidewall. Then, boron is ion implanted to a relatively low concentration in the surface of the silicon substrate () in a low-voltage PMOS region (LPR) thereby to form P-type impurity layers () later to be extension layers ().

Method of manufacturing semiconductor device with offset sidewall structure

Growing community of inventors

Tokyo, Japan

Kazunobu Ota