Epson Imaging Devices Corporation

Sanyo Electric Co., Ltd.

Agency of Industrial Science and Technology

Kazunobu Mameno

Norio Koma

Kenji Tanase

Manabu Takemoto

Yasunori Inoue

Kiyoshi Yoneda

Yukio Mori

Haruhiko Murata

Susumu Tanase

Atsuhiro Yamashita

Koji Marumo

Keita Kawahara

A lighting portion is attached to a reflective liquid crystal display portion. A first transparent substrate and a second transparent substrate made of a glass substrate etc. are attached to each other with a sealing layer coated on those peripheral portions therebetween. The back surface of the first transparent substrate is attached to the reflective liquid crystal display portion, and an organic EL element is formed on the front surface of the first transparent substrate. The organic EL element is sealed in a space surrounded by the first transparent substrate, the second transparent substrate, and the sealing layer. The organic EL element is formed in a region corresponding to a pixel region of the reflective liquid crystal display portion. A desiccant layer is formed on the front surface of the second transparent substrate.

Display device

The invention is directed to a higher contrast in a display device having a lighting device as a front light. A lighting portion is attached to a reflective liquid crystal display portion. A first transparent substrate and a second transparent substrate made of a glass substrate etc. are attached to each other with a sealing layer coated on those peripheral portions therebetween. The back surface of the first transparent substrate is attached to the reflective liquid crystal display portion, and an organic EL element is formed on the front surface of the first transparent substrate. The organic EL element is sealed in a space surrounded by the first transparent substrate, the second transparent substrate, and the sealing layer. The organic EL element is formed in a region corresponding to a pixel region of the reflective liquid crystal display portion. A desiccant layer is formed on the front surface of the second transparent substrate.

A display device has: an RGB-RGBW conversion circuit that converts RGB signals fed thereto into RGBW signals; a display panel that has a plurality of dots each composed of four, namely R, G, B, and W, unit pixels and that displays an image based on the RGBW signals; a defect position specifier that specifies, if a unit pixel is found defective, a position of the defective pixel on the display panel; and a conversion rate controller that controls the rate at which, when the RGB signals are converted into the RGBW signals, the RGB signals are converted into a W signal according to the position of the defective pixel. If the defective pixel is a W pixel, the conversion rate for pixels adjacent thereto is made lower than the standard conversion rate set for the entire display panel.

This invention relates to a surface smoothing method for smoothing the surface of a semiconductor film and insulating film, etc, and a method of forming and SOI substrate by using this surface smoothing method. In this surface smoothing method, the surface of a semiconductor film or an insulating film formed on a substrate is irradiated with an ion beam at an incident angle of about 85.degree. or more, to the normal direction of the surface, while revolving the substrate, whereby the surface is smoothed easily without any contamination thereof or physical deformation of the surface layer. When this surface smoothing method is used in forming an SOI substrate used for a semiconductor three-dimensional circuit element, a single crystal insulating film is formed on a single crystal silicon substrate, and, after annealing, the surface of the insulating film is smoothed by this surface smoothing method and a single crystal silicon film is formed on the smoothed surface thereof, whereby the crystallinity and the surface characteristics of the insulating film are improved and a better quality formed single crystal silicon film is obtained, leading to higher quality of the SOI substrate.

Surface smoothing method and method of forming SOI substrate using the

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Kyoto, Japan

Kazunobu Mameno