Renesas Technology Corp.

Other

Hitachi, Ltd.

Hitachi Device Engineering Co., Ltd.

Kazunari Saitou

Hideki Yasuoka

Masami Kouketsu

Susumu Ishida

Shinji Yasukawa

Yukihide Ode

Youzou Nakayasu

Shigeru Itou

Provided is a manufacturing method of a semiconductor integrated circuit device having a plurality of first MISFETs in a first region and a plurality of second MISFETs in a second region, which comprises forming a first insulating film between two adjacent regions of the first MISFET forming regions in the first region and the second MISFET forming regions in the second region; forming a second insulating film over the surface of the semiconductor substrate between the first insulating films in each of the first and second regions; depositing a third insulating film over the second insulating film; forming a first conductive film over the third insulating film in the second region; forming, after removal of the third and second insulating films from the first region, a fourth insulating film over the surface of the semiconductor substrate in the first region; and forming a second conductive film over the fourth insulating film; wherein the third insulating film remains over the first insulating film in the second region. The present invention makes it possible to raise the threshold voltage of a parasitic MOS and in addition, to suppress occurrence of an NBT phenomenon.

Method of manufacturing semiconductor integrated circuit device with high and low breakdown-voltage MISFETs

Semiconductor integrated circuit device with high and low breakdown-voltage MISFETs

The present invention realizes a liquid crystal display which mounts driving circuits of low power consumption on a substrate on which a display part is mounted. The driving circuits which supply gray scale voltages to pixels are mounted on a liquid crystal display panel. Display data is transferred between the driving circuits using wiring formed on the liquid crystal display panel, the display data is transferred in the inside of the driving circuits through inner data bus lines, and a data inversion calculation which inverts values of the display data is performed in the inside of the driving circuits for achieving the low power consumption.

Liquid crystal display

Semiconductor integrated circuit device and method of manufacturing the same

Growing community of inventors

Mobara, Japan

Kazunari Saitou