Sanyo Electric Co., Ltd.

Kazunari Honma

Shigeharu Matsushita

Naoteru Matsubara

Kiyoshi Yoneda

Hitoshi Hirano

Yasuhiro Takeda

Hideaki Miyamoto

Yoshiki Murayama

Makoto Izumi

Yoshinori Shishida

Yohko Naruse

Katsuji Mabuchi

Hideharu Nagasawa

Eiji Yuasa

An electrostatic operation device in which a variation in the amount of electric charges accumulated in an electret film caused by physical impact can be suppressed. The electrostatic operation device (electrostatic induction power generating device ()) comprises movable electrodes (), an electret film () so formed as to face the movable electrodes () at a space therebetween, and a stopper () for suppressing the approach of the movable electrodes () to the electret film () within a predetermined space.

Electrostatic operation device

An electric power generator capable of using external vibrations in various directions to generate power. A fixed substrate having a surface with a plurality of electret electrodes and a movable substrate having a surface with a movable electrode are spaced from each other. The fixed substrate is fixed in the electric power generator. Spring driving bodies support the movable substrate so that the movable substrate elastically moves in any direction within an XY plane when receiving external vibrations.

Electric power generator

A method of fabricating a memory capable of improving the strength of a signal read from a memory cell is provided. This method of fabricating a memory comprises steps of forming a storage part and an etched thin-film part by partially etching a storage material film formed on a first electrode film by a prescribed thickness, forming an insulator film to cover at least the thin-film part of the storage material film and patterning the insulator film and the thin-film part of the storage material film by forming an etching mask on a prescribed region of the insulator film and thereafter etching the insulator film and the thin-film part of the storage material film through the etching mask.

Method of fabricating memory and memory

A dielectric device having excellent characteristics is provided. This dielectric device comprises such a first electrode layer that constituent elements located on its surface are terminated by halogen atoms and a dielectric film formed on the surface of the first electrode layer terminated by the halogen atoms. When the constituent elements for the first electrode layer located on the surface thereof are terminated by the halogen atoms in order to form a ferroelectric film having a bismuth layer structure, therefore, Bi constituting the ferroelectric film is inhibited from bonding to the constituent elements located on the surface of the first electrode layer.

Dielectric device having dielectric film terminated by halogen atoms

A memory includes a first electrode film, a storage material film formed on the first electrode film, provided with a storage part and a thin-film part having a thickness smaller than a thickness of the storage part and which is at least about 15% of the thickness of the storage part on average, a second electrode film formed on the storage part of the storage material film. The thickness of the thin-film part may be between 15% and 95% of the thickness of the storage part. An insulator film may be formed on the thin-film part and the second electrode part, the insulator film formed on the thin-film part having a same pattern as the thin-film part.

Memory device having storage part and thin-film part

A dielectric element capable of effectively suppressing diffusion of oxygen into a region located under a lower electrode in heat treatment for sintering an oxide-based dielectric film is obtained. This dielectric element comprises a lower electrode including a first conductor film having a function of suppressing diffusion of oxygen, a first dielectric film, formed on the lower electrode, including an oxide-based dielectric film, and a first insulator film, arranged on a region other than the lower electrode, having a function of suppressing diffusion of oxygen. Thus, the first conductor film and the first insulator film function as barrier films preventing diffusion of oxygen, whereby the first conductor film effectively prevents oxygen from diffusing downward along grain boundaries of the lower electrode while the first insulator film effectively prevents oxygen from diffusing downward from the region other than the lower electrode in heat treatment for sintering the oxide-based dielectric film.

Dielectric element including oxide-based dielectric film and method of fabricating the same

Disclosed is a semiconductor memory device which has stack type memory cells each comprising one MIS transistor and one MIS capacitor. A first conductive film having a predetermined thickness is arranged to overlay a memory node contact of a memory cell which corresponds to a source or drain region of the MIS transistor. A second conductive film is formed on the surface of the first conductive film to have a predetermined thickness and come in contact with the source or drain region by means of a memory node contact hole formed inside the memory node contact. The first and second conductive films form a capacitor electrode of the MIS capacitor.

Growing community of inventors

Ogaki, Japan

Kazunari Honma